KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES z High Current z Low Voltage z Complementary to KTC3205 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-0.5A VCE(sat) IC=-1.5A,IB=-30mA -2 V VCE=-2V, IC=-500mA -1 V Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VBE fT Cob 100 320 VCE=-2V,IC=-500mA 120 MHz VCB=-10V, IE=0, f=1MHz 48 pF CLASSIFICATION OF hFE RANK O Y RANGE 100–200 160–320 MARKING 1273 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５