VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH VSMB2000X01 FEATURES VSMB2020X01 • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • Peak wavelength: p = 940 nm 21725-4 • High reliability • High radiant power DESCRIPTION • High radiant intensity VSMB2000X01 series are infrared, 940 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Angle of half intensity: = ± 12° • Low forward voltage • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing APPLICATIONS • Package matches with detector VEMD2000X01 series • IrDA compatible data transmission • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Miniature light barrier • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Photointerrupters • Optical switch Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 • Control and drive circuits • Shaft encoders PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) VSMB2000X01 40 ± 12 940 15 VSMB2020X01 40 ± 12 940 15 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMB2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t5s Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.5, 23-Aug-11 Document Number: 81930 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 0 100 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Tamb - Ambient Temperature (°C) 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.15 1.35 1.6 IF = 1 A, tp = 100 μs VF 2.2 V IF = 1 mA TKVF - 1.8 mV/K IF = 100 mA TKVF - 1.1 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 100 mA, tp = 20 ms Ie 40 V 10 μA 60 mW/sr 70 20 UNIT pF IF = 1 A, tp = 100 μs Ie 330 IF = 100 mA, tp = 20 ms e 40 mW IF = 1 mA TKe - 1.1 %/K IF = 100 mA TKe - 0.51 %/K ± 12 deg Angle of half intensity mW/sr Peak wavelength IF = 30 mA p Spectral bandwidth IF = 30 mA 25 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz d 1.5 mm Cut-off frequency Virtual source diameter Rev. 1.5, 23-Aug-11 920 940 960 nm Document Number: 81930 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) 100 10 tp = 100 µs tp/T= 0.001 IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 1 40 0 1 2 3 VF - Forward Voltage (V) 21534 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 20 60 80 100 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Φe rel - Relative Radiant Power (%) 100 108 90 - 40 - 20 0 20 40 60 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 90 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 7 - Relative Radiant Power vs. Wavelength Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 0° 1000 10° 20° 30° tp = 100 µs tp/T= 0.001 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 40 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) 21444 100 10 1 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.7 0.1 1 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.5, 23-Aug-11 0.6 0.4 0.2 0 21550 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81930 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 0 0 50 100 19841 150 200 250 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters: VSMB2000 0.3 Ø 1.8 ± 0.1 Z 1.6 0.19 2.77 ± 0.2 0.05 ± 0.1 0.4 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 0.4 0.5 2.3 ± 0.2 0.254 exposed copper 2.3 ± 0.2 Cathode Pin ID 1.7 Anode 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 2; 18.03.10 21517 Rev. 1.5, 23-Aug-11 Document Number: 81930 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMB2020 Ø 1.8 2.77 ± 0.2 0.3 0.4 0.19 0.05 1.6 X 2.2 2.2 4.2 ± 0.2 X 20:1 exposed copper 0.6 Cathode 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Anode Pin ID technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 4; 18.03.10 21488 Rev. 1.5, 23-Aug-11 Document Number: 81930 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2000 Unreel direction X 2. Ø 62 ± 0.5 Reel 0 5± Ø 13 ± 0.5 Ø 330 ± 1 .5 Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 X 2:1 4 ± 0.1 2 ± 0.05 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.5, 23-Aug-11 Document Number: 81930 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2020 Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 X 2:1 4 ± 0.1 2 ± 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.5, 23-Aug-11 Document Number: 81930 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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