VS-8S2TH06FP Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr • 175 °C maximum operating junction temperature • High frequency PFC CCM operation • Low leakage current 2 1 • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 2L TO-220 FULL-PAK DESCRIPTION VS-8S2TH06FP 600 V series are the state of the art tandem hyperfast recovery rectifiers: excellent switching performance and extremely low forward voltage drop trade off is overcome, boosting overall application performance. Specially designed for CCM PFC application, these devices show incomparable performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system, increased operating frequency make possible use of smaller reactive elements. Cost effective PFC application is then possible with high efficiency over wide input voltage range and loading factor. Plastic insulated package features easy mounting together with not insulated parts. PRODUCT SUMMARY Package 2L TO-220FP IF(AV) 8A VR 600 V VF at IF 2.4 V trr (typ.) See Recovery table TJ max. 175 °C Diode variation Doubler ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES PARAMETER SYMBOL Repetitive peak reverse voltage TEST CONDITIONS VRRM DC forward current IF Non-repetitive peak surge current IFSM Operating junction and storage temperatures 50 % duty cycle, rect. waveforms, TC = 93 °C TC = 25 °C MAX. UNITS 600 V 8 100 TJ, TStg - 55 to 175 A °C ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.1 2.4 IF = 8 A, TJ = 125 °C - 1.7 2 IF = 8 A, TJ = 150 °C - 1.6 1.8 IR = 100 μA VR = VR rated - <1 10 Reverse leakage current IR TJ = 125 °C, VR = VR rated - 7 80 TJ = 150 °C, VR = VR rated - 27 100 Junction capacitance CT VR = 600 V - 12 - Document Number: 94553 Revision: 19-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] UNITS V μA pF www.vishay.com 1 VS-8S2TH06FP Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = - 50 A/μs, VR = 30 V - - 25 TJ = 25 °C - 19 - TJ = 125 °C - 35 - TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = - 200 A/μs VR = 390 V - 2.8 - - 4.6 5.5 UNITS ns A TJ = 25 °C - 26 - TJ = 125 °C - 84 - MIN. TYP. MAX. UNITS TJ, TStg - 55 - 175 °C Thermal resistance, junction to case RthJC - 4.1 4.8 Thermal resistance, case to heatsink RthCS - 0.2 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS FOR BOTH DIODES PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Mounting torque Marking device www.vishay.com 2 Case style 2L TO-220 FULL-PAK °C/W 8S2TH06FP For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94553 Revision: 19-Aug-10 VS-8S2TH06FP Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 1000 Reverse Current - I R (μA) 175°C 100 150°C 10 125°C 1 0.1 25°C 0.01 0.001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 Tj = 175°C Tj = 150°C Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 1 0 Forward Voltage Drop - VFM (V) 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 D = 0.01 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94553 Revision: 19-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-8S2TH06FP Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® 25 Average Power Loss ( Watts ) Allowable Case Temperature (°C) 200 150 DC 100 Square Wave (D = 50) 50 50% rated Vr applied see note (1) 0 RMS Limit 20 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 5 DC 0 0 2 4 6 8 10 12 14 0 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 2 4 6 8 10 12 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics 100 1000 Vr = 390V Vr = 390V If = 8A, 125°C trr ( ns ) Qrr ( nC ) If = 8A, 125°C 100 If = 8A, 25°C If = 8A, 25°C 10 10 100 1000 di F /dt (A/μs ) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 100 1000 di F /dt (A/μs ) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd +Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 50 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94553 Revision: 19-Aug-10 VS-8S2TH06FP Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 S2 T H 06 FP 1 2 3 4 5 6 7 1 - Vishay Semiconductors product suffix 2 - Current rating (8 = 8 A) 3 - S2 = Doubler true 2 pin 4 - T = TO-220 5 - H = Hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FP = TO-220 FULL-PAK LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95263 Part marking information www.vishay.com/doc?95265 Document Number: 94553 Revision: 19-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-220 (2 PIN) FULL-PAK Tandem 4.69 ± 0.127 10.5 ± 0.127 6.4 ± 0.051 Ø 1.78 3.2 ± 0.051 11.16 ± 0.051 0.96 ± 0.051 Ø 3.0 ± 0.051 Ø 3.40 ± 0.051 2.7 ± 0.127 9.68 ± 0.127 3.3 ± 0.127 7.5° (2 pics) Ø 1.50 13.6 ± 0.127 15.9 ± 0.127 0.96 ± 0.051 DIMENSIONS in millimeters 0.5 5.08 BSC + 0.127 - 0.051 5.08 BSC 2.56 ± 0.051 0.7 + 0.076 - 0.051 R0.6 (both sides) + 5° Document Number: 95263 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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