VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® FEATURES Base common cathode 2 • • • • • • Ultrafast recovery time Low forward voltage drop Up to 175 °C operating junction temperature Common-cathode diodes Low leakage current Optimized for power conversion: welding and industrial SMPS applications • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level • Halogen-free according to IEC 61249-2-21 definition 1 3 Anode 2 Anode 2 1 Common cathode TO-218 DESCRIPTION PRODUCT SUMMARY Package TO-218 IF(AV) 2 x 35 A VR 200 V VF at IF 1.09 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode The VS-70CRU02PbF integrates two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the common-cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous forward current per diode Cathode to anode voltage MAX. UNITS TC = 145 °C 35 A 200 V IFSM TC = 25 °C 300 A PD TC = 100 °C IF(AV) TEST CONDITIONS VR Single pulse forward current per diode Maximum power dissipation per module Operating junction and storage temperatures TJ, TStg 67 W - 55 to 175 °C ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Breakdown voltage, blocking voltage Forward voltage VBR, VR VF TEST CONDITIONS IR = 60 μA MIN. TYP. MAX. UNITS 200 - - IF = 35 A - 0.95 1.09 IF = 35 A, TJ = 125 °C - 0.9 1.0 IF = 35 A, TJ = 175 °C - 0.85 0.9 VR = VR rated - - 60 μA V Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 2 mA Junction capacitance CT VR = 200 V - 50 - pF LS Measured from A-lead to K-lead 5 mm from package body - 10 - nH Series inductance Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TJ = 25 °C Reverse recovery time trr TJ = 125 °C IF = 1 A VR = 30 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. - - 28 - 34 - - 26 - UNITS ns - 49 - - 3.7 - - 8.2 - TJ = 25 °C - 48.7 - TJ = 125 °C - 202 - MIN. TYP. MAX. - 0.8 0.9 - - 0.45 - 0.2 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) Nm (lbf in) TJ = 25 °C TJ = 125 °C IF = 35 A VR = 100 V dIF/dt = 200 A/μs A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink SYMBOL per diode both legs TEST CONDITIONS RthJC RthCS Mounting surface, flat, smooth and greased Weight Mounting torque Marking device www.vishay.com 2 Case style TO-218 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] UNITS K/W 70CRU02 Document Number: 94509 Revision: 09-Feb-11 VS-70CRU02PbF 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Ultrafast Rectifier, 2 x 35 A FRED Pt® Vishay Semiconductors 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 125 °C 10 1 25 °C 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 50 100 150 200 Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 Single pulse (thermal resistance) t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-70CRU02PbF 180 80 170 70 60 150 DC TJ = 125 °C 50 140 130 120 40 TJ = 25 °C 30 110 100 90 Square wave (D = 0.50) Rated VR applied 20 See note (1) 10 80 0 10 20 30 40 50 0 100 60 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 50 600 40 500 RMS limit IF = 35 A VRR = 100 V 400 30 Qrr (nC) Average Power Loss (W) IF = 35 A VRR = 100 V 160 trr (ns) Allowable Case Temperature (°C) Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 20 10 10 20 30 40 50 300 200 100 0 0 TJ = 125 °C 60 TJ = 25 °C 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94509 Revision: 09-Feb-11 VS-70CRU02PbF Ultrafast Rectifier, 2 x 35 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94509 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-70CRU02PbF Vishay Semiconductors Ultrafast Rectifier, 2 x 35 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 70 C R U 02 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (70 = 70 A) 3 - Common cathode 4 - TO-218 5 - Ultrafast recovery 6 - Voltage rating (02 = 200 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 30 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95214 Part marking information www.vishay.com/doc?95219 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94509 Revision: 09-Feb-11 Outline Dimensions Vishay High Power Products FRED PtTM TO-218 DIMENSIONS in millimeters (inches) Ø 0.159 ± 0.002 (Ø 4.04 ± 0.05) 0.050 ± 0.003 (1.27 ± 0.08) 45.0° 0.3066 ± 0.003 (7.79 ± 0.08) 0.4800 ± 0.005 (12.19 ± 0.13) 5.0° (2 places) 1 2 3 3.0° (3 places) Ø 0.118 x 0.01 DP. (Ø 3.00 x 0.254) 0.6025 ± 0.005 (15.30 ± 0.13) 0.2165 BSC Document Number: 95214 Revision: 21-Apr-08 0.1890 ± 0.005 (4.80 ± 0.13) 0.588 ± 0.005 (14.94 ± 0.13) + 0.006 0.0430 - 0.000 (1.09 +- 0.15 0.00 ) 0.0980 ± 0.002 (2.49 ± 0.05) + 0.006 0.0197 - 0.000 (0.50 +- 0.15 0.00 ) For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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