VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES 2L TO-220AC • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation • True 2 pin package • Low forward voltage drop • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 2L TO-220 FULL-PAK Base cathode 2 1 Cathode 3 Anode 2 Anode 1 Cathode VS-8E2TH06 DESCRIPTION/APPLICATIONS VS-8E2TH06FP State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package 2L TO-220AC, 2L TO-220 FP IF(AV) 8A VR 600 V VF at IF 2.5 V trr (typ.) 17 ns TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VALUES UNITS 600 V VRRM Average rectified forward current TC = 133 °C IF(AV) FULL-PAK 8 TC = 78 °C TJ = 25 °C A 70 Non-repetitive peak surge current IFSM Peak repetitive forward current IFM 16 TJ, TStg - 65 to 175 Operating junction and storage temperatures °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.1 2.5 IF = 8 A, TJ = 150 °C - 1.6 1.9 VR = VR rated - 0.2 35 TJ = 150 °C, VR = VR rated - 50 350 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 6 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Document Number: 93166 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] μA www.vishay.com 1 VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 17 23 IF = 8.0 A, dIF/dt = 100 A/μs, VR = 30 V - 22 25 IF = 8 A dIF/dt = 200 A/μs VR = 390 V - 22 - - 43 - - 33 - - 3.1 - - 5.2 - TJ = 25 °C Reverse recovery time trr TJ = 125 °C TJ = 25 °C Peak recovery current IRRM TJ = 125 °C TJ = 25 °C Reverse recovery charge Qrr TJ = 125 °C IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V UNITS ns A - 13 - - 32 - - 120 nC - 230 - MIN. TYP. MAX. UNITS - 65 - 175 °C - 2 2.4 - 5 5.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case FULL-PAK TEST CONDITIONS TJ, TStg RthJC Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6 (5) Mounting torque Marking device www.vishay.com 2 Case style TO-220 Case style TO-220 FULL-PAK For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] °C/W g 8E2TH06 8E2TH06FP Document Number: 93166 Revision: 18-Aug-10 VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors 100 100 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Hyperfast Rectifier, 8 A FRED Pt® TJ = 175 °C 10 TJ = 150 °C 1 TJ = 25 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C TJ = 25 °C 0.001 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 VF - Forward Voltage Drop (V) 93166_01 100 300 400 500 600 VR - Reverse Voltage (V) 93166_02 Fig. 1 - Typical Forward Voltage Drop Characteristics 200 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 0 93166_03 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 93166_04 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (TO-220) Document Number: 93166 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ZthJC - Thermal Impedance (°C/W) 10 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 93166_05 180 170 160 DC 150 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 180 Allowable Case Temperature (°C) Allowable Case Temperature (°C) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) See note (1) 160 140 120 100 80 Square wave (D = 0.50) 80 % rated VR applied 60 See note (1) 100 40 0 93166_06 DC 2 4 6 8 10 0 12 IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current (TO-220) 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) 93166_07 Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) 25 Average Power Loss (W) RMS limit 20 15 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 10 5 0 0 93166_08 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93166 Revision: 18-Aug-10 VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Hyperfast Rectifier, 8 A FRED Pt® 60 Vishay Semiconductors 1000 IF = 8 A IF = 8 A 50 TJ = 125 °C 40 Qrr (nC) trr (ns) TJ = 125 °C 30 20 100 TJ = 25 °C TJ = 25 °C 10 100 10 100 1000 dIF/dt (A/μs) 93166_09 1000 dIF/dt (A/μs) 93166_10 Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93166 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 8 E 2 T H 06 FP -E 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product suffix 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = Single diode 4 - 2 = True 2 pin package 5 - T = TO-220 6 - H = Hyperfast recovery time 7 - Voltage code (06 = 600 V) 8 - None = TO-220 FP = FULL-PAK 9 - Environmental digit: -E = RoHS compliant and terminations lead (Pb)-free -M = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8E2TH06-E QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tubes VS-8E2TH06-M 50 1000 Antistatic plastic tubes VS-8E2TH06FP-E 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com 6 TO-220AC www.vishay.com/doc?95259 TO-220 FULL-PAK www.vishay.com/doc?95260 TO-220AC www.vishay.com/doc?95391 TO-220 FULL-PAK www.vishay.com/doc?95392 www.vishay.com/doc?95388 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93166 Revision: 18-Aug-10 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm A A E ØP F B Q H1 D Term. 4 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b c 60° 1 2 J1 e SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 D 14.99 15.49 0.590 0.610 E 10.04 10.41 0.395 0.410 e 5.08 BSC 0.200 BSC F 1.22 1.37 0.048 0.054 H1 5.97 6.47 0.235 0.255 J1 2.54 2.79 0.100 0.110 L 13.47 13.97 0.530 0.550 (1) 3.31 3.81 0.130 0.150 ØP 3.79 3.88 0.149 0.153 Q 2.60 2.84 0.102 0.112 L1 Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Document Number: 95259 Revision: 21-Jan-10 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b C e J1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 C 0.36 0.53 0.014 0.021 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 e 5.08 typical 0.408 0.200 typical F 2.34 2.74 0.092 0.107 H1 6.50 6.90 0.256 0.272 J1 2.56 2.96 0.101 0.117 L 12.78 13.18 0.503 0.519 0.104 L1 2.23 2.63 0.088 ØQ 2.98 3.38 0.117 0.133 Q1 3.10 3.50 0.122 0.138 Q2 14.80 15.20 0.583 0.598 θ 0° 5° 0° 5° Document Number: 95260 Revision: 22-Jan-10 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Revision: 12-Mar-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-8E2TH06-E VS-8E2TH06FP-E VS-8E2TH06-M