VISHAY 60CPU04-F3

VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 30 A FRED Pt®
FEATURES
Base
common
cathode
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Ultrafast recovery time
• Low leakage current
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
1
3
Anode
Anode
2
1
2
Common
cathode
TO-247AC
DESCRIPTION/APPLICATIONS
VS-60CPU04-F3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
2 x 30 A
VR
400 V
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, dc-to-dc converters as well
as freewheeling diodes in low voltage inverters, and
chopper motor drives.
VF at IF
1.30 V
trr (typical)
37 ns
TJ maximum
175 °C
Diode variation
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VRRM
per leg
Average rectified forward current
per device
Non-repetitive peak surge current per leg
UNITS
400
V
30
IF(AV)
Rated VR, TC = 134 °C
IFSM
TJ = 25 °C
IFM
Rated VR, square wave, 20 kHz, TC = 134 °C
Peak repetitive forward current per leg
Operating junction and storage temperatures
VALUES
60
A
300
TJ, TStg
60
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
400
-
-
IF = 30 A
-
1.10
1.30
IF = 30 A, TJ = 150 °C
-
0.92
1.10
IR = 100 μA
IF = 60 A
-
1.25
1.6
IF = 60 A, TJ = 150 °C
-
1.10
1.4
VR = VR rated
-
-
10
TJ = 150 °C, VR = VR rated
-
-
100
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
40
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
-
nH
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
-
37
40
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
46
-
TJ = 25 °C
-
65
-
-
119
-
-
6.4
-
-
14.7
-
TJ = 25 °C
-
206
-
TJ = 125 °C
-
874
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.6
1.0
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
6
-
-
0.21
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
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2
Case style TO-247AC
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
°C/W
g
60CPU04
Document Number: 93189
Revision: 17-Sep-10
VS-60CPU04-F3
100
TJ = 175 °C
TJ = 125 °C
10
TJ = 25 °C
1
0.4
Vishay Semiconductors
1000
1000
TJ = 175 °C
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Ultrafast Rectifier,
2 x 30 A FRED Pt®
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
2.0
VF - Forward Voltage Drop (V)
93189_01
100
200
250
300
350
400
VR - Reverse Voltage (V)
93189_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
150
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
93189_03
50
100
150
200
250
300
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
93189_04
Single pulse
(thermal resistance)
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VS-60CPU04-F3
Ultrafast Rectifier,
2 x 30 A FRED Pt®
180
1000
160
DC
trr (ns)
Allowable Case Temperature (°C)
Vishay Semiconductors
140
IF = 30 A, TJ = 125 °C
100
IF = 30 A, TJ = 25 °C
Square wave (D = 0.50)
Rated VR applied
120
See note (1)
100
0
5
10
15
20
25
30
35
40
IF(AV) - Average Forward Current (A)
93189_05
10
100
45
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
60
10 000
50
40
Qrr (nC)
Average Power Loss (W)
1000
dIF/dt (A/μs)
93189_07
RMS limit
30
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
10
93189_06
5
10
15
20
25
30
35
40
1000
IF = 30 A, TJ = 25 °C
0
0
IF = 30 A, TJ = 125 °C
45
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
100
100
93189_08
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93189
Revision: 17-Sep-10
VS-60CPU04-F3
Ultrafast Rectifier,
2 x 30 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
VS-60CPU04-F3
Ultrafast Rectifier,
2 x 30 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
04
-F3
1
2
3
4
5
6
7
1
-
HPP product suffix
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration: C = Common cathode
4
-
P = TO-247AC
5
-
U = Ultrafast rectifier
6
-
Voltage rating (04 = 400 V)
7
-
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-60CPU04-F3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
Part marking information
www.vishay.com/doc?95007
SPICE model
www.vishay.com/doc?95398
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93189
Revision: 17-Sep-10
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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