APTGF500U60D4G Single switch NPT IGBT Power Module 1 3 5 2 VCES = 600V IC = 500A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • M6 connectors for power • M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Max ratings 600 670 500 1000 ±20 2200 Reverse Bias Safe Operating Area Tj = 125°C 1200A@520V RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF500U60D4G – Rev 1 July, 2008 Symbol VCES APTGF500U60D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 600A Tj = 125°C VGE = VCE , IC = 9mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 4.5 1.95 2.2 5.5 Max Unit 500 1 2.45 µA mA 6.5 1900 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Gate charge Turn-on Delay Time Rise Time Td(off) Tf Td(on) Tr Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A RG = 12Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 600A RG = 12Ω Min Typ 26 2.4 nF 1.5 µC 150 72 ns 530 40 160 75 ns 550 50 VGE = ±15V Tj = 125°C VBus = 300V IC = 600A Tj = 125°C RG = 12Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 28 mJ 26 mJ 2700 A Reverse diode ratings and characteristics IRRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Test Conditions VR = 600V IF = 600A VGE = 0V IF = 600A VR = 300V di/dt =7000A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 600 1.25 1.2 150 250 Tj = 25°C 36 Tj = 125°C Tj = 25°C Tj = 125°C 56 8 16 Max 750 1000 Unit V µA A 1.6 V ns µC mJ 2-5 APTGF500U60D4G – Rev 1 July, 2008 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF500U60D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.055 0.11 Unit °C/W V 150 125 125 5 2 350 °C N.m g www.microsemi.com 3-5 APTGF500U60D4G – Rev 1 July, 2008 D4 Package outline (dimensions in mm) APTGF500U60D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1200 1200 TJ=25°C 800 VGE=15V VGE=20V 800 TJ=125°C 600 400 400 200 200 VGE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 60 50 800 40 E (mJ) 1000 600 TJ=125°C 400 2 4 5 VCE = 300V VGE = 15V RG = 12 Ω TJ = 125°C Eon 30 Eoff 20 Err 0 0 5 6 7 8 9 10 11 0 12 150 300 Switching Energy Losses vs Gate Resistance 80 600 750 900 Reverse Safe Operating Area 1400 VCE = 300V VGE =15V IC = 600A TJ = 125°C 450 IC (A) VGE (V) Eon 1200 1000 Eoff IC (A) E (mJ) 3 VCE (V) 10 TJ=25°C 200 1 Energy losses vs Collector Current Transfert Characteristics 1200 60 VGE=12V 600 0 IC (A) TJ = 125°C 1000 IC (A) IC (A) 1000 40 800 600 VGE=15V TJ=125°C RG=12 Ω 400 20 200 Err 0 0 10 15 20 25 30 35 40 Gate Resistance (ohms) 45 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.05 0.04 0.03 0.02 0.01 0.9 IGBT 0.7 0.5 0.3 0.1 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGF500U60D4G – Rev 1 July, 2008 Thermal Impedance (°C/W) 0.06 APTGF500U60D4G 60 50 ZVS 40 30 VCE=300V D=50% RG=12Ω TJ=125°C TC=75°C 1000 800 ZCS 600 0 0 100 300 400 IC (A) 500 600 0 700 0.3 0.6 0.9 VF (V) 0.9 1.2 1.5 Diode 0.7 0.06 0.5 0.04 0.3 0.02 200 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 0.08 TJ=25°C 200 10 0.1 TJ=125°C 400 hard switching 20 0 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF500U60D4G – Rev 1 July, 2008 Thermal Impedance (°C/W) Forward Characteristic of diode 1200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70