TOUCHSTONE TS1004IT14TP

TS1002/TS1004
THE ONLY 0.8V/0.6µA RAIL-TO-RAIL DUAL/QUAD OP AMPS
DESCRIPTION
FEATURES
The TS1002 and the TS1004 are the industry’s first
and only dual and quad single-supply, precision
CMOS operational amplifiers fully specified to operate
at 0.8V while consuming less than 0.6µA supply
current per amplifier. Optimized for ultra-long-life
battery-powered applications, the TS1002 and the
TS1004 join Touchstone’s TS1001 operational
amplifier in the “NanoWatt Analog™” highperformance analog integrated circuits portfolio. Both
op amps exhibit a typical offset voltage of 0.5mV, a
typical input bias current of 25pA, and rail-to-rail input
and output stages. The TS1002 and the TS1004 can
operate from single-supply voltages from 0.65V to
2.5V.
Single 0.65V to 2.5V Operation
Supply current: 0.6μA per amplifier (typ)
Offset voltage: 0.5mV (typ)
Low TCVOS: 10µV/°C (typ)
AVOL Driving 100kΩ Load: 90dB (min)
Unity Gain Stable
Rail-to-rail Input and Output
No Output Phase Reversal
Packaging: TS1002 – 8-pin MSOP
TS1004 – 14-pin TSSOP
APPLICATIONS
Battery/Solar-Powered Instrumentation
Portable Gas Monitors
Low-voltage Signal Processing
Nanopower Active Filters
Wireless Remote Sensors
Battery-powered Industrial Sensors
Active RFID Readers
Powerline or Battery Current Sensing
Handheld/Portable POS Terminals
The TS1002/TS1004’s combined features make
either an excellent choice in applications where very
low supply current and low operating supply voltage
translate into very long equipment operating time.
Applications include: nanopower active filters,
wireless remote sensors, battery and powerline
current sensors, portable gas monitors, and
handheld/portable POS terminals.
The TS1002 and the TS1004 are fully specified at
VDD = 0.8V and over the industrial temperature
range (−40°C to +85°C). The TS1002 is available in
PCB-space saving 8-lead MSOP surface-mount
packages. The TS1004 is available in a 14-pin
TSSOP package.
TYPICAL APPLICATION CIRCUIT
Supply Current Distribution
30%
VDD = 0.8V
Percent of Units - %
25%
20%
15%
10%
5%
A NanoWatt 2-Pole Sallen-Key Low-Pass Filter
Patent(s) Pending
NanoWatt Analog and the Touchstone Semiconductor logo are registered
trademarks of Touchstone Semiconductor, Incorporated.
0%
0.53
0.58
0.63
0.68
0.73
Supply Current per Amplifier - µA
Page 1
© 2012 Touchstone Semiconductor, Inc. All rights reserved.
TS1002/TS1004
ABSOLUTE MAXIMUM RATINGS
Total Supply Voltage (VDD to VSS) ........................... +2.75 V
Voltage Inputs (IN+, IN-) ........... (VSS - 0.3V) to (VDD + 0.3V)
Differential Input Voltage .......................................... ±2.75 V
Input Current (IN+, IN-) .............................................. 20 mA
Output Short-Circuit Duration to GND .................... Indefinite
Continuous Power Dissipation (TA = +70°C)
8-Pin MSOP (Derate 7mW/°C above +70°C) ...... 450 mW
14-pin TSSOP (Derate 8.3mW/°C above +70°C)
............................................................................ 500 mW
Operating Temperature Range .................... -40°C to +85°C
Junction Temperature .............................................. +150°C
Storage Temperature Range ..................... -65°C to +150°C
Lead Temperature (soldering, 10s) ............................. +300°
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
TAPE & REEL
PART PACKAGE TAPE & REEL
PART PACKAGE
ORDER NUMBER MARKING QUANTITY ORDER NUMBER MARKING QUANTITY
TS1002IM8TP
-----
TS1004IT14TP
TADJ
TS1002IM8T
----T1004I
3000
TS1004IT14T
3000
Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging.
Consult Touchstone Semiconductor for products specified with wider operating temperature ranges.
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TS1002/TS1004
ELECTRICAL CHARACTERISTICS
VDD = +0.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C. See Note 1
Parameters
Supply Voltage Range
Symbol
VDD-VSS
Conditions
TS1002; RL = Open circuit
Supply Current
ISY
TS1004; RL = Open circuit
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage High
Output Voltage Low
VOS
IIN+, IINIOS
IVR
CMRR
PSRR
VOH
VOL
Short-circuit Current
ISCOpen-loop Voltage Gain
AVOL
Gain-Bandwidth Product
GBWP
Slew Rate
Full-power Bandwidth
Input Voltage Noise Density
Input Current Noise Density
TA = 25°C
-40°C ≤ TA ≤ 85°C
TA = 25°C
-40°C ≤ TA ≤ 85°C
TA = 25°C
-40°C ≤ TA ≤ 85°C
φM
SR
FPBW
en
in
VIN+, VIN- = (VDD - VSS)/2
0.5
Max
2.5
1.6
2
3.2
4
3
5
Units
V
µA
µA
mV
10
0.025
TA = 25°C
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as IIN+ - IINVIN+, VIN- = (VDD - VSS)/2
-40°C ≤ TA ≤ 85°C
Guaranteed by Input Offset Voltage Test
0V ≤ VIN(CM) ≤ 0.4V
0.65V ≤ (VDD - VSS) ≤ 2.5V
TA = 25°C
Specified as VDD - VOUT,
RL = 100kΩ to VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VDD - VOUT,
RL = 10kΩ to VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 100kΩ to VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
Specified as VOUT - VSS,
RL = 10kΩ to VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
VOUT = VSS
-40°C ≤ TA ≤ 85°C
TA = 25°C
VOUT = VDD
-40°C ≤ TA ≤ 85°C
TA = 25°C
VSS+50mV ≤ VOUT ≤ VDD-50mV
-40°C ≤ TA ≤ 85°C
RL = 100kΩ to VSS, CL = 20pF
Unity-gain Crossover,
RL = 100kΩ to VSS, CL = 20pF
RL = 100kΩ to VSS, AVCL = +1V/V
FPBW = SR/(π • VOUT,PP); VOUT,PP = 0.7VPP
f = 1kHz
f = 1kHz
Typ
0.8
1.2
2.4
TCVOS
ISC+
Phase Margin
VIN = VSS or VDD
Min
0.65
µV/°C
nA
20
0.01
VSS
50
50
74
74
1.2
10
0.4
5
0.5
0.3
4.5
3
90
85
nA
2
VDD
V
dB
dB
2
2.5
16
20
0.6
1
7
10
mV
mV
1.5
mA
11
104
dB
4
kHz
70
degrees
1.5
680
0.6
10
V/ms
Hz
µV/
pA/
Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by
device characterization, not production tested.
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TYPICAL PERFORMANCE CHARACTERISTICS
Total Supply Current vs Supply Voltage
Total Supply Current vs Input Common-Mode Voltage
2
2.8
TS1004
1.9
SUPPLY CURENT - µA
SUPPLY CURENT - µA
+85°C, TS1004
2.4
+25°C, TS1004
-40°C, TS1004
1.5
+85°C, TS1002
1
1.12
0.9
1.11
2.04
1.58
2.5
0
0.4
0.2
0.6
0.8
SUPPLY VOLTAGE - Volt
INPUT COMMON-MODE VOLTAGE - Volt
Total Supply Current vs Input Common-Mode Voltage
Input Offset Voltage vs Supply Voltage
0.65
INPUT OFFSET VOLTAGE - mV
TS1004
SUPPLY CURENT - µA
1.34
TS1002
2
TA = +25°C
1.78
1.56
1.34
1.12
TS1002
0.9
0
0.5
1
1.5
2
TA = +25°C
VINCM = VDD
0.6
0.55
VINCM = 0V
0.55
0.5
2.5
0.5
1
2.5
2
1.5
INPUT COMMON-MODE VOLTAGE - Volt
SUPPLY VOLTAGE - Volt
Input Offset Voltage vs Input Common-Mode Voltage
Input Offset Voltage vs Input Common-Mode Voltage
1
1
VDD =0.8V
TA = +25°C
INPUT OFFSET VOLTAGE - mV
INPUT OFFSET VOLTAGE - mV
1.56
+25°C, TS1002
-40°C, TS1002
0.6
0.65
TA = +25°C
1.78
0.5
0
-0.5
-1
0
0.2
0.4
0.6
0.8
INPUT COMMON-MODE VOLTAGE - Volt
Page 4
VDD = 2.5V
TA = +25°C
0.5
0
-0.5
-1
0
0.5
1
1.5
2
2.5
INPUT COMMON-MODE VOLTAGE - Volt
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TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
VDD =0.8V
TA = +25°C
75
Input Bias Current (IIN+, IIN-) vs Input Common-Mode Voltage
250
INPUT BIAS CURRENT - pA
INPUT BIAS CURRENT - pA
100
50
25
0
-25
VDD = 2.5V
TA = +25°C
200
150
100
50
0
-50
-50
0
0.2
0.4
0.6
0
0.8
1
1.5
2
2.5
Output Voltage High (VOH) vs Temperature, RLOAD =100kΩ
4.5
Output Voltage Low (VOL) vs Temperature, RLOAD =100kΩ
4
RL = 100kΩ
VDD = 2.5V
3.5
3
2.5
2
VDD = 0.8V
1.5
1
0.5
+25
-40
OUTPUT SATURATION VOLTAGE - mV
INPUT COMMON-MODE VOLTAGE - Volt
OUTPUT SATURATION VOLTAGE - mV
INPUT COMMON-MODE VOLTAGE - Volt
0
+85
1.8
1.6
VDD = 2.5V
1.4
1.2
1
0.8
0.6
VDD = 0.8V
0.4
0.2
RL = 100kΩ
0
OUTPUT SATURATION VOLTAGE - mV
35
RL = 10kΩ
VDD = 2.5V
25
20
15
VDD = 0.8V
10
5
0
-40
+25
TEMPERATURE - °C
TS1002_4DS r1p0
+85
TEMPERATURE - °C
Output Voltage High (VOH) vs Temperature, RLOAD =10kΩ
30
+25
-40
TEMPERATURE - °C
OUTPUT SATURATION VOLTAGE - mV
0.5
+85
Output Voltage Low (VOL) vs Temperature, RLOAD =10kΩ
20
VDD = 2.5V
16
12
8
VDD = 0.8V
4
RL = 10kΩ
0
-40
+25
+85
TEMPERATURE - °C
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TS1002/TS1004
Output Short Circuit Current, ISC+ vs Temperature
25
OUTPUT SHORT-CIRCUIT CURRENT - mA
OUTPUT SHORT-CIRCUIT CURRENT - mA
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT = 0V
20
VDD = 2.5V
15
10
5
VDD = 0.8V
0
+25
-40
+85
VDD = 2.5V
50
40
30
20
VDD = 0.8V
10
0
-40
+85
+25
TEMPERATURE - °C
TEMPERATURE - °C
0.1Hz to 10Hz Output Voltage Noise
Gain and Phase vs. Frequency
60
Output Short Circuit Current, ISC- vs Temperature
70
VOUT = VDD
60
150
PHASE
50
GAIN - dB
GAIN
20
0
-50
VDD = 0.8V
TA = +25°C
RL = 100kΩ
CL = 20pF
AVCL = 1000 V/V
4kHz
100
130µVPP
-150
-20
10
VOUT(N) - 100µV/DIV
40
PHASE - Degrees
70°
1k
10k
-250
100k
1 Second/DIV
Small-Signal Transient Response
VDD = 2.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
Large-Signal Transient Response
VDD = 2.5V, VSS = GND, RLOAD = 100kΩ, CLOAD = 15pF
OUTPUT
OUTPUT
INPUT
INPUT
FREQUENCY - Hz
200µs/DIV
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2ms/DIV
TS1002_4DS r1p0
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TS1002/TS1004
PIN FUNCTIONS
TS1002
MSOP
1, 7
Pin
TS1004
TSSOP
1, 7, 8, 14
Label
Function
OUT
Amplifier Outputs: A, B – TS1002; A, B, C, D – TS1004
Negative Supply or Analog GND. If applying a negative voltage to
this pin, connect a 0.1µF capacitor from this pin to analog GND.
Amplifier Non-inverting Inputs: A, B – TS1002; A, B, C, D – TS1004
Amplifier Inverting Inputs: A, B – TS1002; A, B, C, D – TS1004
Positive Supply Connection. Connect a 0.1µF bypass capacitor from
this pin to analog GND.
4
7
VSS
3, 5
2, 6
3, 5, 10, 12
2, 6, 9, 13
+IN
-IN
8
14
VDD
THEORY OF OPERATION
The TS1002 and the TS1004 are fully functional for
input signals from the negative supply (VSS or GND)
to the positive supply (VDD). Their input stages
consist of two differential amplifiers, a p-channel
CMOS stage and an n-channel CMOS stage that
are active over different ranges of the input common
mode voltage. The p-channel input pair is active for
input common mode voltages, VINCM, between the
negative supply to approximately 0.4V below the
positive supply. As the common-mode input voltage
moves closer towards VDD, an internal current mirror
activates the n-channel input pair differential pair.
The p-channel input pair becomes inactive for the
balance of the input common mode voltage range up
to the positive supply. Because both input stages
have their own offset voltage (VOS) characteristic, the
offset voltage of these amplifiers is a function of the
applied input common-mode voltage, VINCM. The VOS
has a crossover point at ~0.4V from VDD (Refer to
the VOS vs. VCM curve in the Typical Operating
Characteristics section). Caution should be taken in
applications where the input signal amplitude is
comparable to the amplifiers’ VOS value and/or the
design requires high accuracy. In these situations, it
is necessary for the input signal to avoid the
crossover point. In addition, amplifier parameters
such as PSRR and CMRR which involve the input
offset voltage will also be affected by changes in the
input common-mode voltage across the differential
pair transition region.
The amplifiers’ second stage is a folded-cascode
transistor arrangement that converts the input stage
differential signals into a single-ended output. A
complementary drive generator supplies current to
the output transistors that swing rail to rail.
The amplifiers’ output stage voltage swings within
1.2mV from the rails at 0.8V supply when driving an
output load of 100kΩ - which provides the maximum
possible dynamic range at the output. This is
particularly important when operating on low supply
voltages. When driving a stiffer 10kΩ load, the
amplifiers’ output swings within 10mV of VDD and
within 5mV of VSS (or GND).
APPLICATIONS INFORMATION
Portable Gas Detection Sensor Amplifier
Gas sensors are used in many different industrial
and medical applications. Gas sensors generate a
current that is proportional to the percentage of a
particular gas concentration sensed in an air
sample. This output current flows through a load
resistor and the resultant voltage drop is amplified.
Depending on the sensed gas and sensitivity of the
sensor, the output current can be in the range of
tens of microamperes to a few milliamperes. Gas
TS1002_4DS r1p0
sensor datasheets often specify a recommended
load resistor value or a range of load resistors from
which to choose.
There are two main applications for oxygen sensors
– applications which sense oxygen when it is
abundantly present (that is, in air or near an oxygen
tank) and those which detect traces of oxygen in
parts-per-million
concentration.
In
medical
applications, oxygen sensors are used when air
quality or oxygen delivered to a patient needs to be
monitored. In fresh air, the concentration of oxygen
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TS1002/TS1004
is 20.9% and air samples containing less than 18%
oxygen are considered dangerous. In industrial
applications, oxygen sensors are used to detect the
absence of oxygen; for example, vacuum-packaging
of food products is one example.
The circuit in Figure 1 illustrates a typical
implementation used to amplify the output of an
oxygen detector. Either amplifier makes an
Figure 2: A Simple, Single-pole Active Low-Pass Filter.
If additional attenuation is needed, a two-pole
Sallen-Key filter can be used to provide the
additional attenuation as shown in Figure 3.
For best results, the filter’s cutoff frequency should
be 8 to 10 times lower than the amplfier’s crossover
Figure 1: A Nanopower, Precision Oxygen Gas Sensor
Amplifier.
excellent choice for this application as it only draws
0.6µA of supply current per amplifier and operates
on supply voltages down to 0.65V. With the
components shown in the figure, the circuit
consumes less than 0.7 μA of supply current
ensuring that small form-factor single- or button-cell
batteries (exhibiting low mAh charge ratings) could
last beyond the operating life of the oxygen sensor.
The precision specifications of these amplifiers, such
as their low offset voltage, low TCVOS, low input bias
current, high CMRR, and high PSRR are other
factors which make these amplifiers excellent
choices for this application. Since oxygen sensors
typically exhibit an operating life of one to two years,
an oxygen sensor amplifier built around one of these
amplifiers can operate from a conventionallyavailable single 1.5-V alkaline AA battery for over
290 years! At such low power consumption from a
single cell, the oxygen sensor could be replaced
over 150 times before the battery requires replacing!
Figure 3: A Nanopower 2-Pole Sallen-Key Low-Pass Filter.
frequency. Additional operational amplifier phase
margin shift can be avoided if the amplifier
bandwidth-to-signal bandwidth ratio is greater than
8.
The design equations for the 2-pole Sallen-Key lowpass filter are given below with component values
selected to set a 400Hz low-pass filter cutoff
frequency:
R1 = R2 = R = 1MΩ
C1 = C2 = C = 400pF
Q = Filter Peaking Factor = 1
f–3dB = 1/(2 x π x RC) = 400 Hz
R3 = R4/(2-1/Q); with Q = 1, R3 = R4.
NanoWatt, Buffered Single-pole Low-Pass Filters
A Single +1.5 V Supply, Two Op Amp
Instrumentation Amplifier
When receiving low-level signals, limiting the
bandwidth of the incoming signals into the system is
often required. As shown in Figure 2, the simplest
way to achieve this objective is to use an RC filter at
the noninverting terminal of the amplifier.
The amplifiers’ ultra-low supply current and ultra-low
voltage operation make them ideal for batterypowered applications such as the instrumentation
amplifier shown in Figure 4 using a TS1002.
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TS1002/TS1004
response is observed as there will appear noticeable
peaking/ringing in the output transient response.
If any amplifier is used in an application that requires
driving larger capacitive loads, an isolation resistor
between the output and the capacitive load should
be used as illustrated in Figure 5.
Figure 4: A Two Op Amp Instrumentation Amplifier.
The circuit utilizes the classic two op amp
instrumentation amplifier topology with four resistors
to set the gain. The equation is simply that of a
noninverting amplifier as shown in the figure. The
two resistors labeled R1 should be closely matched
to each other as well as both resistors labeled R2 to
ensure
acceptable
common-mode
rejection
performance.
Resistor networks ensure the closest matching as
well as matched drifts for good temperature stability.
Capacitor C1 is included to limit the bandwidth and,
therefore, the noise in sensitive applications. The
value of this capacitor should be adjusted depending
on the desired closed-loop bandwidth of the
instrumentation amplifier. The RC combination
creates a pole at a frequency equal to 1/(2 π ×
R1C1). If the AC-CMRR is critical, then a matched
capacitor to C1 should be included across the
second resistor labeled R1.
Because these amplifiers accept rail-to-rail inputs,
their input common mode range includes both
ground and the positive supply of 1.5V. Furthermore,
their rail-to-rail output range ensures the widest
signal range possible and maximizes the dynamic
range of the system. Also, with their low supply
current of 0.6μA per amplifier, this circuit consumes
a quiescent current of only ~1.3μA, yet it still exhibits
a 1-kHz bandwidth at a circuit gain of 2.
Figure 5: Using an External Resistor to Isolate a CLOAD from
the Amplifer’s Output.
Table 1 illustrates a range of RISO values as a
function of the external CLOAD on the output of these
amplifiers. The power supply voltage applied on the
these amplifiers at which these resistor values were
determined empirically was 1.8V. The oscilloscope
capture shown in Figure 6 illustrates a typical
transient response obtained with a C LOAD = 500pF
and an RISO = 50kΩ. Note that as CLOAD is increased
a smaller RISO is needed for optimal transient
response.
External Capacitive
Load, CLOAD
0-50pF
100pF
500pF
1nF
5nF
10nF
External Output
Isolation Resistor, RISO
Not Required
120kΩ
50kΩ
33kΩ
18kΩ
13kΩ
Driving Capacitive Loads
While the amplifiers’ internal gain-bandwidth product
is 4kHz, both are capable of driving capacitive loads
up to 50pF in voltage follower configurations without
any additional components. In many applications,
however, an operational amplifier is required to drive
much larger capacitive loads. The amplifier’s output
impedance and a large capacitive load create
additional phase lag that further reduces the
amplifier’s phase margin. If enough phase delay is
introduced, the amplifier’s phase margin is reduced.
The effect is quite evident when the transient
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TS1002/TS1004
In the event that an external RLOAD in parallel with
CLOAD appears in the application, the use of an R ISO
results in gain accuracy loss because the external
series RISO forms a voltage-divider with the external
load resistor RLOAD.
Figure 8: Analog Comparator Hysteresis Band and Output
Switching Points.
VIN
VOUT
(VREF) for the circuit at ½ the supply voltage, or
0.75V, while keeping the current drawn by this
resistor divider low. Capacitor C1 is used to filter any
extraneous noise that could couple into the
amplifer’s inverting input.
In this application, the desired hysteresis band was
set to 100mV (VHYB) with a desired high trip-point
(VHI) set at 1V and a desired low trip-point (VLO) set
at 0.9V.
Figure 6: TS1002/TS1004 Transient Response for RISO = 50kΩ
and CLOAD = 500pF.
Configuring the TS1002 or the TS1004 into a
Nanowatt Analog Comparator
Although optimized for use as an operational
amplifier, these amplifiers can also be used as a railto-rail I/O comparator as illustrated in Figure 7.
Since these amplifers draw very little supply current
(0.6µA per amplifier, typical), it is desired that the
design of an analog comparator using these
amplfiers should also use as little current as
practical. The first step in the design, therefore, was
to set the feedback resistor R3:
R3 = 10MΩ
Calculating a value for R1 is given by the following
expression:
R1 = R3 x (VHYB/VDD)
Substituting VHYB = 100mV, VDD = 1.5V, and R3 =
10MΩ into the equation above yields:
R1 = 667kΩ
Figure 7: A NanoWatt Analog Comparator with UserProgrammable Hysteresis.
External hysteresis can be employed to minimize the
risk of output oscillation. The positive feedback
circuit causes the input threshold to change when
the output voltage changes state. The diagram in
Figure 8 illustrates the amplifiers’ analog comparator
hysteresis band and output transfer characteristic.
The following expression was then used to calculate
a value for R2:
R2 = 1/[VHI/(VREF x R1) – (1/R1) – (1/R3)]
Substituting VHI = 1V, VREF = 0.75V, R1 = 667kΩ,
and R3 = 10MΩ into the above expression yields:
R2 = 2.5MΩ
The design of an analog comparator using the
TS1002 or the TS1004 is straightforward. In this
application, a 1.5-V power supply (VDD) was used
and the resistor divider network formed by RD1 and
RD2 generated a convenient reference voltage
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TS1002/TS1004
Printed Circuit Board Layout Considerations
Even though these amplifiers operate from a single
0.65V to 2.5V power supply and consume very little
supply current, it is always good engineering
practice to bypass the power supplies pins with a
0.1μF ceramic capacitor placed in close proximity to
the VDD and VSS (or GND) pins.
Good pcb layout techniques and analog ground
plane management improve the performance of any
analog circuit by decreasing the amount of stray
TS1002_4DS r1p0
capacitance that could be introduced at the op amp's
inputs and outputs. Excess stray capacitance can
easily couple noise into the input leads of the op
amp and excess stray capacitance at the output will
add to any external capacitive load. Therefore, PC
board trace lengths and external component leads
should be kept a short as practical to any of the
amplifiers’ package pins. Second, it is also good
engineering practice to route/remove any analog
ground plane from the inputs and the output pins of
these amplifiers.
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TS1002/TS1004
PACKAGE OUTLINE DRAWING
8-Pin MSOP Package Outline Drawing
(N.B., Drawings are not to scale)
3.10 Max
2.90 Min
0.38 Max
0.28 Min
0.65 REF
8
0.23 Max
0.13 Min
0.127
0.27 REF
3.10 Max
2.90 Min
5.08 Max
4.67 Min
GAUGE PLANE
0' -- 6'
1
2
0.70 Max
0.40 Min
0.25
0.38 Max
0.28 Min
DETAIL “A”
DETAIL ‘A’
0.95 Max
0.75 Min
1.10 Max
SEATING PLANE
0.10 Max
0.15 Max
0.05 Min
0.23 max
0.13 Min
NOTE:
1. PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
2. PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTUSIONS.
3. CONTROLLING DIMENSION IN MILIMETERS.
4. THIS PART IS COMPLIANT WITH JEDEC MO-187 VARIATIONS AA
5. LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC.
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PACKAGE OUTLINE DRAWING
14-Pin TSSOP Package Outline Drawing
(N.B., Drawings are not to scale)
5.10 Max
4.90 Min
( D)
0.65 REF
N
6.60 Max
6.20 Min
4.5 Max
4.3 Min
(E)
GAUGE PLANE
0.25 R = R’ = 0.09 Min
R’
SEATING PLANE
0' – 8'
Pin 1
ID MARK
0.75 Max
0.45 Min
2
1
0.30 Max
0.19 Min
1.05 Max
0.80 Min
DETAIL ‘A’
12' TYP 1.00 REF
ALL SIDES
1.20 Max
SEATING PLANE
0.15 Max
O.05 Min
0.10 Max
0.20 Max
0.09 Min
DETAIL ‘A’
0.30 Max
0.19 Min
0.20 Max
0.09 Min
0.16 Max
0.09 Min
NOTE:
0.25 Max
0.19 Min
1. “D” AND “E” ARE REFERENCE DATUMS AND DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER SIDE.
2. “N” IS THE NUMBER OF TERMINAL POSITIONS.
3. CONTROLLING DIMENSION IN MILIMETERS AND ANGLES IN DEGREES.
4. THIS PART IS COMPLIANT WITH JEDEC SPECIFICATION MO-153 AB-1
5. LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC.
Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not
assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all
information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND.
Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance
notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone
Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications,
customers should provide adequate design and operating safeguards. Trademarks and registered trademarks are the property of their
respective owners.
Touchstone Semiconductor, Inc.
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+1 (408) 215 - 1220 ▪ www.touchstonesemi.com
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