PANJIT BSS84DWT/R7

BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
This device contains two electrically-isolated P-channel, enhancement-mode
MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device
is ideal for portable applications where board space is at a premium.
SOT- 363
4
FEATURES
5
6
Low On-Resistance
3
2
Low Gate Threshold Voltage
1
Fast Switching
Available in lead-free plating (100% matte tin finish)
6
5
4
1
2
3
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
MARKING CODE: S84
MAXIMUM RATINGS
TJ = 25°C Unless otherwise noted
Rating
Symbol
Value
Units
Drain-Source Voltage
VDSS
- 50
V
Drain-Gate Voltage (Note 1)
V DGR
- 50
V
Gate-Source Voltage
VGSS
± 20
V
Drain Current
ID
130
mA
Total Power Dissipation (Note 2)
PD
200
mW
Operating Junction Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Note 1. RGS < 20K ohms
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
Value
Units
R thja
625
°C/W
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
8/12/2005
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BSS84DW
Electrical Characteristics (Each Device)
TJ = 25°C Unless otherwise noted
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Min
Typ
Max
Units
-50
-
-
V
VDS= -50V, VGS= 0V, T J=25°C
-
-
-15
V DS= -50V, VGS= 0V, T J=125°C
-
-
-60
V DS= -25V, V GS= 0V, T J=25°C
-
-
-0.1
V GS= ±20V, V DS= 0V
-
-
±10
nA
Conditions
Min
Typ
Max
Units
V GS(th) VDS= V GS, I D= -1mA
-0.8
-1.44
-2.0
V
-
3.8
10
Ohms
0.05
-
-
S
Min
Typ
Max
Units
-
-
45
pF
-
-
25
pF
-
-
12
pF
Conditions
Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
I DSS
I GSS
µA
ON CHARACTERISTICS (Note 3)
Parameter
Gate Threshold Voltage
Symbol
Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A
g FS V DS= -25V, I D= -0.1A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Input Capacitance
C iss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Conditions
VDS= -25V,
VGS= 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Turn-On Delay Time
t D(ON)
-
7.5
-
ns
Turn-Off Delay Time
t D(OFF)
VDD= -30V, I D = -0.27A,
RGEN= 50ohm, VGS= -10V
-
25
-
ns
Note 3. Short duration test pulse used to minimize self-heating
8/12/2005
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BSS84DW
Electrical Characteristic Curves (Each Device)
1
1
V GS= 6V, 7V, 8V, 9V, 10V
0.9
-ID - Drain Source Current (A)
-ID - Drain-to-Source Current (A)
TJ = 25°C Unless otherwise noted
0.8
0.7
5.0V
0.6
0.5
0.4
4.0V
0.3
0.2
3.0V
0.1
0
V DS =10V
0.8
0.6
0.4
25oC
0.2
0
0
1
2
3
4
5
0
1
Fig. 1. Output Characteristics
4
5
6
7
Fig. 2. Transfer Characteristics
10
RDS(ON) - On-Resistance (Ohms)
10
RDS(ON) - On-Resistance (Ohms)
3
-V GS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
8
V GS = 4.5V
6
4
V GS =10.0V
2
8
6
Ids=-500mA
4
2
Ids=-50mA
0
0
0
0.2
0.4
0.6
0.8
2
1
4
6
8
10
-V GS - Gate-to-Source Voltage (V)
-ID - Drain Curre nt (A)
Fig. 3. On-Resistance vs. Drain Current
Fig. 4. On-Resistance vs. G-S Voltage
1.2
10
ID =250µA
-IS - Source Current (A)
V GS Threshold Voltage (NORMALIZED
2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
o
TJ - Junction Temperature ( C)
1
25oC
0.1
0.01
0.4
0.6
0.8
1
1.2
1.4
-VSD - Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
8/12/2005
VGS = 0V
Page 3
Fig. 6. Sourse-Drain Diode Forward Voltage
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BSS84DW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BSS84DW T/R7 - 7 inch reel, 3K units per reel
BSS84DW T/R13 - 13 inch reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
8/12/2005
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