ISC BD204

Inchange Semiconductor
Product Specification
BD204
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Low saturation voltage
・Complement to type BD203
・Wide area of safe operation
APPLICATIONS
・For medium power switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter -base voltage
Open collector
-5
V
IC
Collector current (DC)
-8
A
ICM
Collector current-Peak
-12
A
IBM
Base current-Peak
-3
A
PT
Total power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
2.08
℃/W
Inchange Semiconductor
Product Specification
BD204
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.2A ;IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-5
V
VCEsat-1
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
-1.5
V
Base-emitter saturation voltage
IC=-6A; IB=-0.6A
-2.0
V
ICEO
Collector cut-off current
VCE=-30V ;IB=0;
-0.2
mA
ICBO
Collector cut-off current
VCB=-40V ;IE=0;Tj=150℃
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.5
mA
hFE
DC current gain
IC=-2A ; VCE=-2V
30
Transition frequency
IC=-0.3A ; VCE=-3V
7.0
Base-emitter on voltage
IC=-3A;VCE=-2V
VBEsat
fT
VBE
CONDITIONS
2
MIN
TYP.
MAX
UNIT
MHz
-1.5
V
Inchange Semiconductor
Product Specification
BD204
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3