ISC 2SC1061

Inchange Semiconductor
Product Specification
2SC1061
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Low saturation voltage
・Complement to type 2SA671
・Note: type 2SC1060 with short pin
APPLICATIONS
・For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
4
V
IC
Collector current (DC)
3
A
ICM
Collector current-peak
8
A
IB
Base current (DC)
0.5
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
5.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SC1061
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA ;IC=0
4
V
Collector-emitter saturation voltage
IC=2A; IB=0.2A
1.0
V
VBE
Base-emitter on voltage
IC=1A ; VCE=4V
1.5
V
ICBO
Collector cut-off current
VCB=25V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=4V
35
hFE-2
DC current gain
IC=1A ; VCE=4V
35
Transition frequency
IC=0.5A ; VCE=4V
5.0
VCEsat
fT
‹
CONDITIONS
hFE-2 classifications
A
B
C
D
35-70
60-120
100-200
160-320
2
MIN
TYP.
MAX
UNIT
320
MHz
Inchange Semiconductor
Product Specification
2SC1061
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC1061
Silicon NPN Power Transistors
4