ROHM 2SD2696

Low frequency transistor (for amplification)
2SD2696
zDimensions (Unit : mm)
zStructure
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
1.2
0.32
0.2
VMT3
0.8
1.2
(3)
(1)(2)
0.4 0.4
0.2
0.22
0.13
0.5
0.8
(1) Base
zApplications
Switching
(2) Emitter
(3) Collector
zPackaging specifications
Package
Type
Abbreviated symbol : UH
zInner circuit
Taping
(3) Collector
Code
T2L
Basic ordering unit (pieces)
8000
2SD2696
(1) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP ∗1
PD ∗2
Tj
Tstg
Limits
30
30
6
400
800
150
150
−55 to +150
Unit
V
V
V
mA
mA
mW / TOTAL
°C
°C
(2) Emitter
∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Typ.
−
−
−
−
−
120
−
400
3.0
Max.
−
−
−
100
100
300
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=1mA
IC=10µA
IE=10µA
VCB= 30V
VEB= 6V
IC=100mA, IB= 2mA
VCE=2V, IC=100mA
VCE=2V, IE= −100mA, f=100MHz
VCB=10V, IE= 0A, f=1MHz
1/3
2009.05 - Rev.B
2SD2696
Data Sheet
zElectrical characteristics curves
COLLECTOR CURRENT : I C [mA]
Ta=25°C
pulsed
1.2mA
2mA
1.6mA
300
COLLECTOR CURRENT : I C [mA]
1000
400
1mA
0.8mA
200
0.6mA
0.4mA
100
VCE=2V
pulsed
Ta=125°C
85°C
100
25°C
-40°C
10
IB=0.2mA
1
0.2
0
0
1
2
3
4
5
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE : VBE [V]
COLLECTOR - EMITTER VOLTAGE : VCE [V]
Fig.2 Grounded Emitter Propagation
Characteristics
Fig.1 Typical Output Characteristics
1000
1000
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
VCE=5V
VCE=2V
100
Ta=25°C
pulsed
10
1
Ta=125°C
85°C
100
25°C
-40°C
VCE=2V
pulsed
10
10
100
1
1000
10
Collector Current (Ⅰ)
COLLECTOR SATURATION VOLTAGE
: VCE(s at) [V]
COLLECTOR SATURATION
VOLTAGE : VCE(sat) [V]
1
Ta=25°C
pulsed
IC /IB=50/1
20/1
10/1
0.1
0.01
1
10
100
1000
Fig.4 DC Current Gain vs
Collector Current (Ⅱ)
Fig.3 DC Current Gain vs
1
100
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
25°C
-40°C
1
COLLECTOR CURRENT : IC [mA]
10
100
1000
COLLECTOR CURRENT : IC [mA]
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
Voltage vs Collector Current (Ⅱ)
Voltage vs Collector Current (Ⅰ)
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Ta= 125°C
85°C
0.1
0.01
1000
c 2009 ROHM Co., Ltd. All rights reserved.
○
IC /IB=10/1
pulsed
2/3
2009.05 - Rev.B
2SD2696
Data Sheet
1
IC /IB=20/1
pulsed
COLLECTOR SATURATION
VOLTAGE : VCE(sat) [V]
COLLECTOR SATURATION
VOLTAGE : VCE(s at) [V]
1
Ta=125℃
85℃
25℃
0.1
-40℃
0.01
1
10
100
COLLECTOR CURRNT : IC [mA]
Ta=125°C
85°C
25°C
-40°C
0.1
IC /IB=50/1
pulsed
0.01
1000
1
Fig.8 Collector-Emitter Saturation
Fig.7 Collector-Emitter Saturation
Voltage vs Collector Current (Ⅳ)
Voltage vs Collector Current (Ⅲ)
100
10
1
10
100
1000
EMITTER CURRENT : IE [mA]
Fig.9 Transion frequency vs
Emitter Collector
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c 2009 ROHM Co., Ltd. All rights reserved.
○
EMITTER INPUT CAPACITANCE : Cib(pF)
100
Ta=25°C
VCE= 2V
pulsed
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
TRANSITION FREQUENCY
: fT [MHz]
1000
10
100
1000
COLLECTOR CURRENT : IC [mA]
Ta=25°C
f=1MHz
IE=0A
IC =0A
Cib
10
Cob
1
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Fig.10 Emitter input capacitance vs. EmitterBase Voltage
Collector output capacitance vs. CollectorBase Voltage
3/3
2009.05 - Rev.B
Notice
Notes
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