ROHM 2SD2150T100S

Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
(IC / IB = 2A / 0.1A)
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zDimensions(Unit : mm)
2SD2150
0.5±0.1
4.5+0.2
−0.1
4.0±0.3
2.5+0.2
−0.1
1.0±0.2
(1)
zStructure
Epitaxial planar type
NPN silicon transistor
0.4±0.1
1.5±0.1
(2)
(3)
0.5±0.1
0.4+0.1
−0.05
0.4±0.1
1.5±0.1
3.0±0.2
(1) Base
(2) Collector
ROHM : MPT3
(3) Emitter
EIAJ : SC-62
Abbreviated symbol: CF∗
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
3
A (DC)
5
A (Pulse)
0.5
W
Parameter
1.5 +0.2
−0.1
1.6±0.1
Collector current
IC
Collector power dissipation
PC
2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗ Denotes hFE
∗1
∗2
∗1 Single pulse Pw=10ms
∗2 Mounted on a 40×40×0.7mm Ceramic substrate.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
Unit
Conditions
BVEBO
6
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.1
µA
VCB=30V
Emitter cutoff current
IEBO
−
−
0.1
µA
VEB=5V
VCE(sat)
−
0.2
0.5
V
IC/IB=2A/0.1A
hFE
120
−
560
−
VCE=2V, IC=0.1A
Transition frequency
fT
−
290
−
MHz
Output capacitance
Cob
−
25
−
pF
Collector-emitter saturation voltage
DC current transfer ratio
∗
∗
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
Measured using pulse current.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.11 - Rev.B
2SD2150
Data Sheet
zPackaging specifications and hFE
Type
hFE
2SD2150
RS
Package
Taping
Code
T100
Basic ordering
unit (pieces)
1000
hFE values are classified as follows :
Item
R
S
hFE
180 to 390
270 to 560
zElectrical characteristic curves
1
0.5
Ta=100°C
25°C
−40°C
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2
0.4
0.6
0.8
1.0
1.2
1.2
4mA
0.8
2mA
0.4
Ta=100°C
25°C
−40°C
1000
500
200
100
50
20
10
5
1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2
5 10
Fig.2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=2V
2000
0.2
0.2
Ta=100°C
25°C
−40°C
0.1
50m
20m
10m
5m
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1 2
0.5
0.2
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2
5 10
Ta=25°C
VCE=2V
500
200
100
50
20
10
5
2
1
−1
−2
Collector-emitter
saturation voltage vs.
collector current ( )
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c 2009 ROHM Co., Ltd. All rights reserved.
○
−5 −10 −20 −50−100 −200−500−1000
EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : IC (A)
Fig.7
10mA
2
5mA
1
IB=0A
0
0
1
Fig.8
Gain bandwidth product vs.
emitter current
2/2
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3
1
Grounded emitter output
characteristics ( )
lC/lB=20
0.5
Ta=100°C
25°C
−40°C
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Collector-emitter
saturation voltage vs.
collector current ( )
1000
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.5
1
50m
5 10
15mA
3
Grounded emitter output
characteristics ( )
0.5
Ta=25°C
35mA
30mA
25mA
20mA
4
IB=0A
1.0
IC/IB=10
50mA
45mA
40mA
COLLECTOR CURRENT : IC (A)
IC/IB=50
0.1
0.8
1
DC current gain vs.
collector current
2
0.6
2
COLLECTOR CURRENT : IC (A)
Fig.4
0.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter propagation
characteristics
5000
DC CURRENT GAIN : hFE
6mA
0
0
1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1
1.6
5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
2
Ta=25°C
12mA
10mA
8mA
20mA
18mA
16mA
14mA
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
2
VCE=2V
5
Fig.6
Collector-emitter
saturation voltage vs.
collector curren ( )
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
500
Cob
200
100
Cob
50
20
10
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2009.11 - Rev.B
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