Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD909 BD911 APPLICATIONS ・Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO PARAMETER CONDITIONS BD910 Open emitter BD912 VCEO VEBO ANG INCH Collector-emitter voltage OND IC M E ES Collector-base voltage BD910 VALUE -80 Emitter-base voltage Open collector V -100 -80 Open base BD912 UNIT V -100 -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.4 ℃/W TC≤25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BD910 MIN TYP. MAX UNIT -80 IC=-0.1A; IB=0 V BD912 -100 VCEsat-1 Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A;IB=-2.5 A -3.0 V Base-emitter saturation voltage IC=-10A;IB=-2.5 A -2.5 V Base-emitter voltage IC=-5A ; VCE=-4V -1.5 V BD910 VCB=-80V; IE=0 TC=150℃ -0.5 -5.0 BD912 VCB=-100V; IE=0 TC=150℃ -0.5 -5.0 BD910 VCE=-40V; IB=0 BD912 VCE=-50V; IB=0 VBEsat VBE ICBO ICEO Collector cut-off current 体 半导 固电 Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain hFE-3 fT D N O IC N A H INC M E S GE VEB=-5V; IC=0 R O T UC -1.0 mA -1.0 mA IC=-0.5A ; VCE=-4V 40 250 IC=-5A ; VCE=-4V 15 150 DC current gain IC=-10A ; VCE=-4V 5 Transition frequency IC=-0.5A ; VCE=-4V 3 2 mA MHz Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4 Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 5