BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features ■ Low current consumption (100 µA to 1 mA) ■ Low noise figure ■ Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 8 V VCEO collector-emitter voltage open base - - 5 V IC DC collector current - - 6.5 mA Ptot total power dissipation - - 32 mW up to Ts = 165 °C [1] hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz 3.5 5 - GHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 15 - dB F noise figure Γ = Γopt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 1.8 - dB Γ = Γopt; IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 2 - dB [1] Ts is the temperature at the soldering point of the collector tab. BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2: Discrete pinning Pin Description Simplified outline Symbol Code: V10 1 base 2 emitter 3 collector 3 3 1 2 1 2 sym021 SOT23 3. Ordering information Table 3: Ordering information Type number BFT25A Package Name Description Version - plastic surface mounted package; 3 leads SOT23 4. Marking Table 4: Marking Type number Marking code [1] BFT25A 34* [1] * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 8 V VCEO collector-emitter voltage open base - 5 V VEBO emitter-base voltage open collector - 2 V IC DC collector current - 6.5 mA up to Ts = 165 °C Ptot total power dissipation - 32 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 175 °C [1] Ts is the temperature at the soldering point of the collector tab. 9397 750 13399 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 2 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 6. Thermal characteristics Table 6: Symbol Rth(j-s) [1] Thermal characteristics Parameter Conditions [1] from junction to soldering point Typ Unit 260 K/W Ts is the temperature at the soldering point of the collector tab. 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector cut-off current IE = 0 A; VCB = 5 V - - 50 nA hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 500 MHz 3.5 5 - GHz Cre feedback capacitance IC = ic = 0 A; VCB = 1 V; f = 1 MHz - 0.3 0.45 pF GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 15 - dB F noise figure Γ = Γopt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 1.8 - dB Γ = Γopt; IC = 1 mA; VCE = 1 V; Tamb = 25 °C; f = 1 GHz - 2 - dB [1] [1] GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 G UM = 10 log ------------------------------------------------------dB 2 2 ( 1 – S 11 ) ( 1 – S 22 ) 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 3 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor mbg247 40 mcd138 100 Ptot (mW) hFE 80 30 60 20 40 10 20 0 0 50 100 150 200 0 10−3 10−2 10−1 10 1 I C (mA) Ts (°C) VCE = 1 V. Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector current. mcd103 0.4 Cre (pF) mcd140 6 fT (GHz) 0.3 4 0.2 2 0.1 0 0 1 2 3 4 5 0 VCB (V) IC = ic = 0 A; f = 1 MHz. Fig 3. Feedback capacitance as a function of collector-base voltage. 0 1 2 3 I C (mA) 4 VCE = 1 V; Tamb = 25 °C; f = 500 MHz. Fig 4. Transition frequency as a function of collector current. Figure 5, 6, 7 and 8, GUM = maximum unilateral power gain; MSG = maximum stable gain. 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 4 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor mcd104 25 gain (dB) mcd105 20 GUM gain (dB) 20 GUM 15 15 MSG 10 MSG 10 5 5 0 0 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 I C (mA) 2.0 I C (mA) VCE = 1 V; f = 500 MHz. VCE = 1 V; f = 1 GHz. Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current. mcd106 50 mcd107 50 gain (dB) gain (dB) 40 40 GUM 30 GUM 30 MSG 20 MSG 20 10 10 Gmax 0 10 102 103 f (MHz) VCE = 1 V; IC = 0.5 mA. Fig 7. Gain as a function of frequency. Gmax 104 0 10 103 f (MHz) 104 VCE = 1 V; IC = 1 mA. Fig 8. Gain as a function of frequency. 9397 750 13399 Product data sheet 102 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 5 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor mcd145 4 F (dB) F (dB) f= 2 GHz 3 mcd146 4 IC = 2 mA 3 1 GHz 1 mA 500 MHz 2 2 1 1 0 10−1 1 0 102 10 IC (mA) 0.5 mA VCE = 1 V. 103 f (MHz) 104 VCE = 1 V. Fig 9. Minimum noise figure as a function of collector current. Fig 10. Minimum noise figure as a function of frequency. 1 0.5 2 pot. unst. region 6 dB 0.2 4 dB 5 2.5 dB 10 +j 0.2 0 −j 0.5 1 2 5 stability circle ∞ 10 MSG 10 14.5 dB 5 13 dB 0.2 Γopt Fmin = 1.9 dB 11 dB 2 0.5 1 mcd108 See Table 8; Zo = 50 Ω. Average gain parameter: MSG = 14.5 dB. Fig 11. Noise circle figure. 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 6 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor Table 8: f (MHz) 500 Noise parameters VCE (V) 1 IC (mA) Fmin (dB) 1 1.9 Γopt Rn/50 (mag) (ang) 0.79 4 2.5 1 0.5 2 pot. unst. region stability circle 8 dB 0.2 4 dB 5 3 dB 10 +j 0.2 0 −j 0.5 MSG 11.2 dB 1 2 5 ∞ 10 10 Γopt Fmin = 2 dB 10 dB 5 0.2 8 dB 2 0.5 mcd109 1 See Table 9; Zo = 50 Ω. Average gain parameter: MSG = 11.2 dB. Fig 12. Noise circle figure. Table 9: f (MHz) 1000 Noise parameters VCE (V) 1 IC (mA) 1 Fmin (dB) 2 9397 750 13399 Product data sheet Γopt Rn/50 (mag) (ang) 0.74 8 2.6 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 7 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor pot. unst. region stability circle 1 0.5 2 MSG 7.7 dB Γopt 0.2 7 dB 5 Fmin = 2.4 dB +j 10 3 dB 0.2 0 −j 1 0.5 2 5 dB 5 ∞ 10 4 dB 10 6 dB 0.2 5 2 0.5 mcd110 1 See Table 10; Zo = 50 Ω. Average gain parameter: MSG = 7.7 dB. Fig 13. Noise circle figure. Table 10: f (MHz) 2000 Noise parameters VCE (V) 1 IC (mA) 1 Fmin (dB) 2.4 9397 750 13399 Product data sheet Γopt Rn/50 (mag) (ang) 0.72 26 1.7 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 8 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 1 0.5 2 0.2 5 10 +j 0.2 0 1 0.5 2 −j ∞ 5 10 40 MHz 3 GHz 10 5 0.2 2 0.5 mcd111 1 VCE = 1 V; IC = 1 mA. Zo = 50 Ω. Fig 14. Common emitter input reflection coefficient (S11). 90° 135° 45° 3 GHz 180° 40 MHz 5 4 3 2 1 0° 0 −135° −45° −90° mcd112 VCE = 1 V; IC = 1 mA. Fig 15. Common emitter forward transmission coefficient (S21). 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 9 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 90° 135° 45° 3 GHz 180° 40 MHz 0.5 0.4 0.3 0.2 0.1 0° 0 −135° −45° −90° mcd114 VCE = 1 V; IC = 1 mA. Fig 16. Common emitter reverse transmission coefficient (S12). 1 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 40 MHz −j 10 3 GHz 0.2 5 2 0.5 1 mcd113 VCE = 1 V; IC = 1 mA. Zo = 50 Ω. Fig 17. Common emitter output reflection coefficient (S22). 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 10 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 8. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB Fig 18. Package outline. 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 11 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 9. Revision history Table 11: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BFT25A_4 20040706 product data sheet - 9397 750 13399 BFT25A_CNV_3 Modifications: BFT25A_CNV_3 • • Converted from Lotus Manuscript format to TDM format. Marking code added. 19971205 product specification - 9397 750 13399 Product data sheet - - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 12 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13399 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 04 — 6 July 2004 13 of 14 BFT25A Philips Semiconductors NPN 5 GHz wideband transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Contact information . . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 July 2004 Document order number: 9397 750 13399 Published in The Netherlands