BUJ103AD Silicon diffused power transistor Rev. 01 — 14 December 2004 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features ■ Low thermal resistance ■ Fast switching 1.3 Applications ■ Electronic lighting ballasts ■ Inverters ■ DC-to-DC converters ■ Motor control systems 1.4 Quick reference data ■ VCESM ≤ 700 V ■ Ptot ≤ 80 W ■ IC ≤ 4 A ■ hFEsat = 12.5 (typ) 2. Pinning information Table 1: Pinning Pin Description 1 base 2 collector 3 emitter mb mounting base; connected to collector Simplified outline Symbol mb 2 [1] 1 3 2 1 sym056 3 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. BUJ103AD Philips Semiconductors Silicon diffused power transistor 3. Ordering information Table 2: Ordering information Type number BUJ103AD Package Name Description Version D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM peak collector-emitter voltage VBE = 0 V - 700 V VCBO collector-base voltage open emitter - 700 V VCEO collector-emitter voltage open base - 400 V IC collector current (DC) - 4 A ICM peak collector current - 8 A IB base current (DC) - 2 A IBM peak base current - 4 A Tmb ≤ 25 °C; see Figure 1 Ptot total power dissipation - 80 W Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) P tot P der ( % ) = ------------------------- × 100% P tot ( 25 °C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 2 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base see Figure 2 thermal resistance from junction to ambient Rth(j-a) [1] [1] Min Typ Max Unit - - 1.56 K/W - 75 - K/W Device mounted on a printed-circuit board; minimum footprint. 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 0.02 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 5: Characteristics Tmb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current VBE = 0 V; VCE = VCESMmax [1] - - 1.0 mA VBE = 0 V; VCE = VCESMmax; Tj = 125 °C [1] - - 2.0 mA collector-base cut-off current VBE = 0 V; VCE = VCESMmax [1] - - 1.0 mA VCEO = VCEOMmax = 400 V [1] - - 0.1 mA ICEO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; L = 25 mH; see Figure 3 and 4 400 - - V VCEsat collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 10 - 0.25 1.0 V VBEsat base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 11 - 0.97 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V; see Figure 9 10 17 32 IC = 500 mA; VCE = 5 V 13 22 32 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 3 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor Table 5: Characteristics …continued Tmb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit hFEsat DC saturation current gain IC = 2.0 A; VCE = 5 V 11 16 22 IC = 3.0 A; VCE = 5 V - 12.5 - - 0.52 0.6 µs - 2.7 3.3 µs - 0.3 0.35 µs - 1.2 1.4 µs - 30 60 ns - - 1.8 µs - - 120 ns Dynamic characteristics Switching times (resistive load); see Figure 5 and 6 ton turn-on time tstg storage time tf fall time ICon = 2.5 A; IBon = −IBoff = 0.5 A; RL = 75 Ω Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time ICon = 2 A; IBon = 0.4 A; LB = 1 µH; VBB = −5 V Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time [1] ICon = 2 A; IBon = 0.4 A; LB = 1 µH; VBB = −5 V; Tj = 100 °C Measured with half sine-wave voltage (curve tracer). IC (mA) 50 V 100 Ω to 200 Ω 250 horizontal oscilloscope vertical 100 6V 300 Ω 1Ω 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 3. Test circuit for collector-emitter sustaining voltage Fig 4. Oscilloscope display for collector-emitter sustaining voltage test waveform 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 4 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor IC ICon 90 % 90 % VCC RL VIM 0 10 % RB DUT t tf tp tstg IB ton T toff 001aab989 IBon 10 % VIM = −6 V to +8 V; VCC = 250 V; tp = 20 µs; δ = tp/T = 0.01. t tr ≤ 30 ns RB and RL calculated from ICon and IBon requirements. −IBoff Fig 5. Test circuit for resistive load switching 001aab990 Fig 6. Switching times waveforms for resistive load IC ICon 90 % VCC LC 10 % IBon VBB LB DUT 001aab991 tf IB t tstg toff IBon t −IBoff VCC = 300 V; VBB = −5 V; LC = 200 µH; LB = 1 µH. Fig 7. Test circuit for inductive load switching 001aab992 Fig 8. Switching times waveforms for inductive load 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 5 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 001aab994 102 Tj = 25 °C 001aab995 2.0 VCEsat (V) IC = 1 A 2A 3A 4A 1.6 hFE VCE = 5 V 1.2 10 1V 0.8 0.4 1 10−2 10−1 1 10 0 10−2 10−1 1 IC (A) 10 IB (A) Tj = 25 °C. Fig 9. DC current gain as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of base current; typical values 001aab996 1.4 VBEsat (V) 1.2 001aab997 VCEsat (V) 0.5 0.4 1.0 0.8 0.3 0.6 0.2 0.4 0.1 0.2 0 10−1 1 10 0 10−1 IC/IB = 4. 10 IC/IB = 4. Fig 11. Base-emitter saturation voltage as a function of collector current; typical values Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14195 Product data sheet 1 IC (A) IC (A) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 6 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 001aac000 10 IC (A) 8 VCC 6 LC IBon VBB VCEclamp probe point 4 LB DUT 001aab999 2 0 0 VCEclamp ≤ 1000 V; VCC = 150 V; VBB = −5 V; LB = 1 µH; LC = 200 µH. 200 400 600 800 1000 VCEclamp (V) Tj ≤ Tj(max). Fig 13. Test circuit for reverse bias safe operating area Fig 14. Reverse bias safe operating area 001aac001 102 IC (A) duty cycle = 0.01 10 ICMmax ICmax II(3) (1) tp = 20 µs 50 µs 100 µs 200 µs 500 µs DC 1 (2) 10−1 I(3) 10−2 III(3) 10−3 1 102 10 103 VCEclamp (V) Tmb ≤ 25 °C; Mounted with heatsink compound and 30 ± 5 Newton force on the center of the envelope. (1) Ptot maximum and Ptot peak maximum lines. (2) Second breakdown limits. (3) I = Region of permissible DC operation. II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Fig 15. Forward bias safe operating area 7. Package information Epoxy meets requirements of UL94 V-0 at 1⁄8 inch. 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 7 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 8. Package outline Plastic single-ended surface mounted package (D-PAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 01-12-11 04-10-14 Fig 16. Package outline SOT428 (SC-63) 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 8 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 9. Mounting 7.0 7.0 1.5 2.15 2.5 4.57 001aab021 Dimensions in mm. Fig 17. SOT428 soldering pattern for surface mounting 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 9 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 10. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BUJ103AD_1 20041214 Product data sheet - 9397 750 14195 - 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 10 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14195 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 14 December 2004 11 of 12 BUJ103AD Philips Semiconductors Silicon diffused power transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package information . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 December 2004 Document number: 9397 750 14195 Published in The Netherlands