BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features ■ ■ ■ ■ High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications ■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as: ◆ analog and digital cellular telephones ◆ cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) ◆ radar detectors ◆ pagers ◆ Satellite Antenna TeleVision (SATV) tuners 1.4 Quick reference data Table 1: Quick reference data Conditions Min Typ Max Unit VCBO Symbol Parameter collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 6 V IC collector current (DC) - - 35 mA mW Ptot total power dissipation Tsp ≤ 90 °C - - 210 hFE DC current gain IC = 15 mA; VCE = 3 V; Tj = 25 °C 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.27 0.4 pF fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 °C - 14 - GHz Gmax maximum power gain [2] IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C - 18.3 - dB [1] BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit |s21|2 insertion power gain IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω - 14 - dB NF noise figure Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz - 1.1 - dB [1] Tsp is the temperature at the soldering point of the collector pin. [2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. 2. Pinning information Table 2: Pinning Pin Description 1 collector 2 emitter 3 base 4 emitter Simplified outline 3 Symbol 1 4 3 2, 4 2 sym086 1 3. Ordering information Table 3: Ordering information Type number BFG325W/XR Package Name Description Version - plastic surface mounted package; reverse pinning; 4 leads SOT343R 4. Marking Table 4: Marking codes Type number Marking code [1] BFG325W/XR A8* [1] * = p: made in Hong Kong. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 6 V VEBO emitter-base voltage open collector - 2 V 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 2 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IC collector current (DC) Tsp ≤ 90 °C [1] Min Max Unit - 35 mA - 210 mW Ptot total power dissipation Tstg storage temperature −65 +175 °C Tj junction temperature - 175 °C [1] Tsp is the temperature at the soldering point of the collector pin. 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-sp) [1] Conditions Tsp ≤ 90 °C thermal resistance from junction to solder point [1] Typ Unit 403 K/W Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Table 7: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit nA ICBO collector-base cut-off current IE = 0 A; VCB = 5 V - - 15 hFE DC current gain IC = 15 mA; VCE = 3 V 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.27 0.4 pF CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.22 - pF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.49 - pF fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 °C - 14 - GHz Gmax maximum power gain [1] IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C - 18.3 - dB |s21|2 insertion power gain IC = 15 mA; VCE = 3 V; Tamb = 25 °C; ZS = ZL = 50 Ω - 14 - dB f = 1.8 GHz - 10 - dB NF noise figure Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz f = 3 GHz - 1.1 - dB PL(1dB) output power at 1 dB gain compression IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω - 8.7 - dBm IP3 third order intercept point IC = 15 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω - 19.4 - dBm [1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4. 2 2 1 + Ds – s 11 – s 22 2 K is the Rollet stability factor: K = ----------------------------------------------------------- where Ds = s 11 × s 22 – s 12 × s 21 . 2× s × s 21 12 MSG = maximum stable gain. 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 3 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 001aac158 250 Ptot (mW) 001aac159 35 IC (mA) 30 IB = 350 µA 200 300 µA 25 250 µA 150 100 20 200 µA 15 150 µA 10 100 µA 5 50 µA 50 0 0 50 100 150 0 200 0 Tsp (°C) Fig 1. Power derating curve 1 2 3 4 5 VCE (V) 6 Fig 2. Collector current as a function of collector-emitter voltage; typical values 001aac160 0.34 001aac161 40 G (dB) CCBS (pF) MSG 30 s21 2 0.30 20 Gmax 0.26 10 0.22 0 0 1 2 3 4 5 10 102 103 VCB (V) IC = 0 mA; f = 1 MHz. IC = 15 mA; VCE = 3 V. Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values 9397 750 14246 Product data sheet 104 f (MHz) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 4 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 3 GHz 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 40 MHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aac162 VCE = 3 V; IC = 15 mA; Zo = 50 Ω. Fig 5. Common emitter input reflection coefficient (s11); typical values 90° 135° 45° 40 MHz 180° 50 40 30 20 10 0 3 GHz −135° 0° −45° −90° 001aac163 VCE = 3 V; IC = 15 mA. Fig 6. Common emitter forward transmission coefficient (s21); typical values 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 5 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 90° 135° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 0 40 MHz 0° −135° −45° −90° 001aac164 VCE = 3 V; IC = 15 mA. Fig 7. Common emitter reverse transmission coefficient (s12); typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 40 MHz 3 GHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aac165 VCE = 3 V; IC = 15 mA; Zo = 50 Ω. Fig 8. Common emitter output reflection coefficient (s22); typical values 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 6 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 8. Application information Table 8: SPICE parameters of the BFG325 DIE Sequence Parameter Value Unit 1 IS 26.6 aA 2 BF 200 - 3 NF 1 - 4 VAF 40 V 5 IKF 105 mA 6 ISE 2.3 fA 7 NE 2.114 - 8 BR 10 - 9 NR 1 - 10 VAR 2.5 V 11 IKR 10 A 12 ISC 0 aA 13 NC 1.5 - 14 RB 3.6 Ω 15 RE 1.5 Ω 16 RC 2.6 Ω 17 CJE 185.6 fF 18 VJE 890 mV 19 MJE 0.294 - 20 CJC 77.06 fF 21 VJC 601 mV 22 MJC 0.159 - 23 XCJC 1 - 24 FC 0.7 - 25 TF 8.1 ps 26 XTF 10 - 27 VTF 1000 V 28 ITF 150 mA 29 PTF 0 deg 30 TR 0 ns 31 KF 0 - 32 AF 1 - 33 TNOM 25 °C 34 EG 1.014 eV 35 XTB 0 - 36 XTI 8 - 37 Q1.AREA 2.5 - 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 7 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor LC_lead LC_wire CCB C_base_pad LB_lead BJT1 LB_wire CBE C_emitter_pad CCE CHIP LE_wire LE_lead 001aac166 Fig 9. Package equivalent circuit of SOT343R Table 9: List of components; see Figure 9 Designation Value Unit CCB 2 fF CBE 80 fF CCE 80 fF C_base_pad 67 fF C_emitter_pad 142 fF LC_wire 0.767 nH LB_wire 0.842 nH LE_wire 0.212 nH LC_lead 0.28 nH LB_lead 0.281 nH LE_lead 0.1 nH 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 8 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 9. Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 SOT343R Fig 10. Package outline SOT343R 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 9 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BFG325W_XR_1 20050202 Product data sheet - 9397 750 14246 - 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 10 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14246 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 February 2005 11 of 12 BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14246 Published in The Netherlands