PHILIPS BFG325W/XR

BFG325W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
■
■
■
■
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
◆ analog and digital cellular telephones
◆ cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
◆ radar detectors
◆ pagers
◆ Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1:
Quick reference data
Conditions
Min
Typ
Max
Unit
VCBO
Symbol Parameter
collector-base voltage
open emitter
-
-
15
V
VCEO
collector-emitter voltage
open base
-
-
6
V
IC
collector current (DC)
-
-
35
mA
mW
Ptot
total power dissipation
Tsp ≤ 90 °C
-
-
210
hFE
DC current gain
IC = 15 mA; VCE = 3 V;
Tj = 25 °C
60
100
200
CCBS
collector-base
capacitance
VCB = 5 V; f = 1 MHz;
emitter grounded
-
0.27
0.4
pF
fT
transition frequency
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 °C
-
14
-
GHz
Gmax
maximum power gain [2]
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C
-
18.3
-
dB
[1]
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
Table 1:
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
|s21|2
insertion power gain
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C;
ZS = ZL = 50 Ω
-
14
-
dB
NF
noise figure
Γs = Γopt; IC = 3 mA;
VCE = 3 V; f = 2 GHz
-
1.1
-
dB
[1]
Tsp is the temperature at the soldering point of the collector pin.
[2]
Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2. Pinning information
Table 2:
Pinning
Pin
Description
1
collector
2
emitter
3
base
4
emitter
Simplified outline
3
Symbol
1
4
3
2, 4
2
sym086
1
3. Ordering information
Table 3:
Ordering information
Type number
BFG325W/XR
Package
Name
Description
Version
-
plastic surface mounted package; reverse pinning;
4 leads
SOT343R
4. Marking
Table 4:
Marking codes
Type number
Marking code [1]
BFG325W/XR
A8*
[1]
* = p: made in Hong Kong.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
6
V
VEBO
emitter-base voltage
open collector
-
2
V
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
2 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IC
collector current (DC)
Tsp ≤ 90 °C
[1]
Min
Max
Unit
-
35
mA
-
210
mW
Ptot
total power dissipation
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
-
175
°C
[1]
Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Rth(j-sp)
[1]
Conditions
Tsp ≤ 90 °C
thermal resistance from junction to solder point
[1]
Typ
Unit
403
K/W
Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
nA
ICBO
collector-base cut-off current
IE = 0 A; VCB = 5 V
-
-
15
hFE
DC current gain
IC = 15 mA; VCE = 3 V
60
100
200
CCBS
collector-base capacitance
VCB = 5 V; f = 1 MHz; emitter grounded
-
0.27
0.4
pF
CCES
collector-emitter capacitance
VCE = 5 V; f = 1 MHz; base grounded
-
0.22
-
pF
CEBS
emitter-base capacitance
VEB = 0.5 V; f = 1 MHz; collector grounded
-
0.49
-
pF
fT
transition frequency
IC = 15 mA; VCE = 3 V; f = 1 GHz;
Tamb = 25 °C
-
14
-
GHz
Gmax
maximum power gain [1]
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 °C
-
18.3
-
dB
|s21|2
insertion power gain
IC = 15 mA; VCE = 3 V; Tamb = 25 °C;
ZS = ZL = 50 Ω
-
14
-
dB
f = 1.8 GHz
-
10
-
dB
NF
noise figure
Γs = Γopt; IC = 3 mA; VCE = 3 V; f = 2 GHz
f = 3 GHz
-
1.1
-
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 °C; ZS = ZL = 50 Ω
-
8.7
-
dBm
IP3
third order intercept point
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 °C; ZS = ZL = 50 Ω
-
19.4
-
dBm
[1]
Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2
2
1 + Ds – s 11 – s 22
2
K is the Rollet stability factor: K = ----------------------------------------------------------- where Ds = s 11 × s 22 – s 12 × s 21 .
2× s × s
21
12
MSG = maximum stable gain.
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
3 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
001aac158
250
Ptot
(mW)
001aac159
35
IC
(mA)
30
IB = 350 µA
200
300 µA
25
250 µA
150
100
20
200 µA
15
150 µA
10
100 µA
5
50 µA
50
0
0
50
100
150
0
200
0
Tsp (°C)
Fig 1. Power derating curve
1
2
3
4
5
VCE (V)
6
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac160
0.34
001aac161
40
G
(dB)
CCBS
(pF)
MSG
30
s21 2
0.30
20
Gmax
0.26
10
0.22
0
0
1
2
3
4
5
10
102
103
VCB (V)
IC = 0 mA; f = 1 MHz.
IC = 15 mA; VCE = 3 V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14246
Product data sheet
104
f (MHz)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
4 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
3 GHz
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
40 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aac162
VCE = 3 V; IC = 15 mA; Zo = 50 Ω.
Fig 5. Common emitter input reflection coefficient (s11); typical values
90°
135°
45°
40 MHz
180°
50
40
30
20
10
0 3 GHz
−135°
0°
−45°
−90°
001aac163
VCE = 3 V; IC = 15 mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
5 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
135°
45°
3 GHz
180°
0.5
0.4
0.3
0.2
0.1
0
40 MHz
0°
−135°
−45°
−90°
001aac164
VCE = 3 V; IC = 15 mA.
Fig 7. Common emitter reverse transmission coefficient (s12); typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
40 MHz
3 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aac165
VCE = 3 V; IC = 15 mA; Zo = 50 Ω.
Fig 8. Common emitter output reflection coefficient (s22); typical values
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
6 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
8. Application information
Table 8:
SPICE parameters of the BFG325 DIE
Sequence
Parameter
Value
Unit
1
IS
26.6
aA
2
BF
200
-
3
NF
1
-
4
VAF
40
V
5
IKF
105
mA
6
ISE
2.3
fA
7
NE
2.114
-
8
BR
10
-
9
NR
1
-
10
VAR
2.5
V
11
IKR
10
A
12
ISC
0
aA
13
NC
1.5
-
14
RB
3.6
Ω
15
RE
1.5
Ω
16
RC
2.6
Ω
17
CJE
185.6
fF
18
VJE
890
mV
19
MJE
0.294
-
20
CJC
77.06
fF
21
VJC
601
mV
22
MJC
0.159
-
23
XCJC
1
-
24
FC
0.7
-
25
TF
8.1
ps
26
XTF
10
-
27
VTF
1000
V
28
ITF
150
mA
29
PTF
0
deg
30
TR
0
ns
31
KF
0
-
32
AF
1
-
33
TNOM
25
°C
34
EG
1.014
eV
35
XTB
0
-
36
XTI
8
-
37
Q1.AREA
2.5
-
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
7 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
LC_lead
LC_wire
CCB
C_base_pad
LB_lead
BJT1
LB_wire
CBE
C_emitter_pad
CCE
CHIP
LE_wire
LE_lead
001aac166
Fig 9. Package equivalent circuit of SOT343R
Table 9:
List of components; see Figure 9
Designation
Value
Unit
CCB
2
fF
CBE
80
fF
CCE
80
fF
C_base_pad
67
fF
C_emitter_pad
142
fF
LC_wire
0.767
nH
LB_wire
0.842
nH
LE_wire
0.212
nH
LC_lead
0.28
nH
LB_lead
0.281
nH
LE_lead
0.1
nH
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
8 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
9. Package outline
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
SOT343R
Fig 10. Package outline SOT343R
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
9 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
10. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BFG325W_XR_1
20050202
Product data sheet
-
9397 750 14246
-
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
10 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14246
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 February 2005
11 of 12
BFG325W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 February 2005
Document number: 9397 750 14246
Published in The Netherlands