INFINEON BG5120K

BG5120K
Dual N-Channel MOSFET Tetrode
• Low noise gain controlled input stages for UHF
4
5
6
and VHF -tuners e. g. (NTSC, PAL)
• Two AGC amplifiers in one single package
1
2
3
• Integrated gate protection diodes
• Low noise figure, high AGC-range
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BG5120K
6
5
4
Drain
A
1
B
2
AGC
RF
Input RG1
3
G2
G1
RF Output
+ DC
GND
VGG
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG5120K
Package
SOT363
Pin Configuration
1=G1* 2=G2
3=G1** 4=D**
Marking
5=S
6=D*
K1
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
Gate 1/ gate 2-source current
±IG1/2SM
1
Gate 1/ gate 2-source voltage
±V G1/G2S
6
Total power dissipation
Ptot
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
1
Value
8
20
Unit
V
mA
V
mW
°C
2009-10-01
BG5120K
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point1)
Rthchs
≤ 280
K/W
1For
calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
µA
+IG2SS
-
-
50
nA
IDSS
-
-
10
µA
IDSX
-
12
-
mA
VG1S(p)
-
0.7
-
V
VG2S(p)
-
0.6
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 6 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA, VG1S = 2 V
2
2009-10-01
BG5120K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics V DS= 5V , V G2S=4V, (I D=10mA) (verified by random sampling)
30
Forward transconductance
gfs
mS
Gate1 input capacitance
Cg1ss
-
2.2
-
Cdss
-
1.4
-
pF
f = 10 MHz
Output capacitance
f = 10 MHz
Power gain
Gp
dB
800 MHz
-
23
-
45 MHz
-
30
-
Noise figure
dB
F
800 MHz
-
1.1
-
45 MHz , 45 MHz
-
0.7
-
45
-
-
∆G p
Gain control range
VG2S = 4 ... 0 V, f = 800 MHz
Cross-modulation k=1%, f W=50MHz, funw=60MHz Xmod
dBµV
AGC = 0 dB
90
-
-
AGC = 10 dB
-
87
-
AGC = 40 dB
96
100
-
3
2009-10-01
BG5120K
Total power dissipation Ptot = ƒ(TS)
Drain current ID = ƒ(IG1)
VG2S = 4V
300
30
mA
mW
24
200
ID
P tot
22
20
18
16
150
14
12
100
10
8
6
50
4
2
0
0
20
40
60
80
100
120 °C
0
-1
150
1
3
5
7
9
11 µA
14
IG1
TS
Output characteristics ID = ƒ(V DS)
Gate 1 current IG1 = ƒ(V G1S)
VDS = 5V
VG2S = Parameter
90
15
mA
µA
1.4V
4.0V
12
70
3.0V
11
60
1.3V
IG1
ID
10
9
50
8
7
1.2V
2.5V
40
6
2.0V
30
5
1.1V
4
20
3
2
10
1
0
0
1
2
3
4
5
6
7
V
0
0
9
VD
0.5
1
1.5
V
2.5
V G1
4
2009-10-01
BG5120K
Drain current ID = ƒ(V G1S)
VDS = 5V
Gate 1 forward transconductance
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
40
4.0 V
3.0 V
2.0 V
1.5 V
mS
14
mA
4.0V
12
2.0V
11
30
25
9
ID
g fs
10
1.5V
8
20
7
6
15
5
4
10
3
2
5
1.0V
1
0
0
2
4
6
8
10
12
14
16 mA
0
0
20
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
ID
Drain current ID = ƒ(VGG )
VDS = 5V, VG2S = 4V, RG1 = 150kΩ
Drain current ID = ƒ(V GG)
VDS = 5V, VG2S = 4V
(connected to VGG, VGG =gate1 supply voltage)
RG1 = Parameter in kΩ
2
20
12
mA
mA
10
16
82 k
100 k
120 k
150 k
9
14
ID
8
ID
V
V G1
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGG
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VGG=VDS
5
2009-10-01
BG5120K
Power gain Gps = ƒ (VG2S)
Noise figure F = ƒ (VG2S)
f= 45MHz
f=45MHz
4
35
dB
25
dB
15
F
Gps
20
10
2
5
0
-5
1
-10
-15
-20
0
0.5
1
1.5
2
2.5
3
V
0
0
4
1
V
2
VG2
4
V G2
Noise figure F = ƒ (VG2S)
Power gain Gps = ƒ (VG2S)
f=800MHz
f = 800 GHz
4
25
dB
dB
F
Gps
15
10
5
2
0
-5
1
-10
-15
0
0
1
2
V
-20
0
4
VG2
0.5
1
1.5
2
2.5
3
V
4
V G2
6
2009-10-01
BG5120K
AGC characteristic AGC = ƒ(VG2S)
AGC characteristic AGC = ƒ(V G2S)
VDS = 5 V, RGG = 120 kΩ, f = 800 MHz
VDS = 5 V, RGG = 120 kΩ, f = 45 MHz
50
55
dB
dB
45
40
35
AGC
AGC
40
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
2.5
3
V
0
0
4
VG2S
0.5
1
1.5
2
2.5
3
V
4
VG2S
Crossmodulation Vunw = (AGC)
VDS = 5 V, I D = 14 mA
115
Vunw
dBµV
105
100
95
90
85
0
5
10
15
20
25
30
35
40 dB
50
AGC
7
2009-10-01
BG5120K
Crossmodulation test circuit
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
RGEN
50Ω
4n7
50 Ω
RG1
VGG
Semibiased
8
2009-10-01
Package SOT363
BG5120K
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
9
2009-10-01
BG5120K
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
10
2009-10-01