BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. (NTSC, PAL) • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BG5120K 6 5 4 Drain A 1 B 2 AGC RF Input RG1 3 G2 G1 RF Output + DC GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BG5120K Package SOT363 Pin Configuration 1=G1* 2=G2 3=G1** 4=D** Marking 5=S 6=D* K1 * For amp. A; ** for amp. B 180° rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Value 8 20 Unit V mA V mW °C 2009-10-01 BG5120K Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA IDSX - 12 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA, VG1S = 2 V 2 2009-10-01 BG5120K Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS= 5V , V G2S=4V, (I D=10mA) (verified by random sampling) 30 Forward transconductance gfs mS Gate1 input capacitance Cg1ss - 2.2 - Cdss - 1.4 - pF f = 10 MHz Output capacitance f = 10 MHz Power gain Gp dB 800 MHz - 23 - 45 MHz - 30 - Noise figure dB F 800 MHz - 1.1 - 45 MHz , 45 MHz - 0.7 - 45 - - ∆G p Gain control range VG2S = 4 ... 0 V, f = 800 MHz Cross-modulation k=1%, f W=50MHz, funw=60MHz Xmod dBµV AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 3 2009-10-01 BG5120K Total power dissipation Ptot = ƒ(TS) Drain current ID = ƒ(IG1) VG2S = 4V 300 30 mA mW 24 200 ID P tot 22 20 18 16 150 14 12 100 10 8 6 50 4 2 0 0 20 40 60 80 100 120 °C 0 -1 150 1 3 5 7 9 11 µA 14 IG1 TS Output characteristics ID = ƒ(V DS) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 90 15 mA µA 1.4V 4.0V 12 70 3.0V 11 60 1.3V IG1 ID 10 9 50 8 7 1.2V 2.5V 40 6 2.0V 30 5 1.1V 4 20 3 2 10 1 0 0 1 2 3 4 5 6 7 V 0 0 9 VD 0.5 1 1.5 V 2.5 V G1 4 2009-10-01 BG5120K Drain current ID = ƒ(V G1S) VDS = 5V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 40 4.0 V 3.0 V 2.0 V 1.5 V mS 14 mA 4.0V 12 2.0V 11 30 25 9 ID g fs 10 1.5V 8 20 7 6 15 5 4 10 3 2 5 1.0V 1 0 0 2 4 6 8 10 12 14 16 mA 0 0 20 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID Drain current ID = ƒ(VGG ) VDS = 5V, VG2S = 4V, RG1 = 150kΩ Drain current ID = ƒ(V GG) VDS = 5V, VG2S = 4V (connected to VGG, VGG =gate1 supply voltage) RG1 = Parameter in kΩ 2 20 12 mA mA 10 16 82 k 100 k 120 k 150 k 9 14 ID 8 ID V V G1 7 12 6 10 5 8 4 6 3 4 2 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGG 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGG=VDS 5 2009-10-01 BG5120K Power gain Gps = ƒ (VG2S) Noise figure F = ƒ (VG2S) f= 45MHz f=45MHz 4 35 dB 25 dB 15 F Gps 20 10 2 5 0 -5 1 -10 -15 -20 0 0.5 1 1.5 2 2.5 3 V 0 0 4 1 V 2 VG2 4 V G2 Noise figure F = ƒ (VG2S) Power gain Gps = ƒ (VG2S) f=800MHz f = 800 GHz 4 25 dB dB F Gps 15 10 5 2 0 -5 1 -10 -15 0 0 1 2 V -20 0 4 VG2 0.5 1 1.5 2 2.5 3 V 4 V G2 6 2009-10-01 BG5120K AGC characteristic AGC = ƒ(VG2S) AGC characteristic AGC = ƒ(V G2S) VDS = 5 V, RGG = 120 kΩ, f = 800 MHz VDS = 5 V, RGG = 120 kΩ, f = 45 MHz 50 55 dB dB 45 40 35 AGC AGC 40 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 V 0 0 4 VG2S 0.5 1 1.5 2 2.5 3 V 4 VG2S Crossmodulation Vunw = (AGC) VDS = 5 V, I D = 14 mA 115 Vunw dBµV 105 100 95 90 85 0 5 10 15 20 25 30 35 40 dB 50 AGC 7 2009-10-01 BG5120K Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased 8 2009-10-01 Package SOT363 BG5120K Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 9 2009-10-01 BG5120K Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2009-10-01