D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 6 12 S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r S m a l l S i g n a l D i s c r et e s Edition 2008-04-24 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA612 BGA612, Silicon Germanium Broadband MMIC Amplifier Revision History: 2008-04-24, Rev. 2.1 Previous Version: 2003-11-04 Page Subjects (major changes since last revision) All New Chip Version with integrated ESD protection 5 Electrical Characteristics slightly changed 7-8 Figures updated All Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.1, 2008-04-24 BGA612 Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Feature • Cascadable 50 Ω-gain block • 3 dB-bandwidth: DC to 2.8 GHz with 17.5 dB typical gain at 1.0 GHz • Compression point P-1dB = 7 dBm at 2.0 GHz • Noise figure F50Ω = 2.1 dB at 2 GHz • Absolute stable • 70 GHz fT - Silicon Germanium technology • 1 kV HBM ESD protection (Pin-to-Pin) • Pb-free (RoHS compliant) package1) 3 4 2 1 SOT343 Applications • Driver amplifier for GSM/PCS/CDMA/UMTS • Broadband amplifier for SAT-TV & LNBs • Broadband amplifier for CATV 1) Pb-containing package may be available upon special request Out, 3 IN, 1 GND, 2,4 Figure 1 Pin connection Description BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 20 mA The BGA612 is based on Infineon Technologies’ B7HF Silicon Germanium technology. Type Package Marking BGA612 SOT343 BNs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.1, 2008-04-24 BGA612 Electrical Characteristics Maximum Ratings Table 1 Maximum ratings Parameter Symbol Limit Value Unit Device voltage VD ID Iin Pin Ptot TJ TA TSTG 2.8 V 80 mA 0.7 mA 10 dBm 225 mW 150 °C -65... 150 °C -65... 150 °C 1000 V Value Unit Junction - soldering point RthJS 200 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W Device current Current into pin In Input power 1) Total power dissipation, TS < 105 °C 2) Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) VESD 1)Valid for ZS = ZL = 50 Ω, VCC = 5 V, RBias = 135 Ω 2) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Thermal resistance Parameter Symbol 1) 2 Electrical Characteristics Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2) VCC = 5 V, RBias = 135 Ω, Frequency = 2 GHz, unless otherwise specified Table 3 Electrical Characteristics Parameter Symbol Values Min. Insertion power gain Noise figure (ZS = 50 Ω) |S21| Unit Note / Test Condition 18.0 dB 17.5 dB f = 0.1 GHz f = 1.0 GHz f = 2.0 GHz f = 0.1 GHz f = 1.0 GHz f = 2.0 GHz Typ. 2 F50Ω Max. 16.3 dB 1.8 dB 2.0 dB 2.1 dB Output power at 1 dB gain compression P-1dB 7 dBm Output third order intercept point OIP3 RLin RLout ID 17 dBm 17 dB 17 dB 20 mA Input return loss Output return loss Total device current Data Sheet 5 Rev. 2.1, 2008-04-24 BGA612 Refer ence Plane Electrical Characteristics V CC = 5V In Bias-T In RBias = 135Ω GND ID GND VD Out Bias-T Out Refer ence Plane Top View Caution: Device Voltage VD at Pin Out! V D = V CC - R Bias I D BGA612_Test_Circuit.vsd Figure 2 Data Sheet Test Circuit for Electrical Characteristics and S-Parameter 6 Rev. 2.1, 2008-04-24 BGA612 Measured Parameters 3 Measured Parameters Power Gain |S21|2, Gma = f(f) V = 5V, R = 135Ω, I = 20mA CC Bias 20 Matching |S |, |S | = f(f) 11 22 VCC = 5V, R Bias = 135Ω, I C = 20mA C 0 G ma 18 |S |2 −5 21 16 22 −15 S11 11 21 S 22 10 2 |S | , G −10 |S |, |S | [dB] 12 ma [dB] 14 8 −20 6 4 −25 2 0 −1 10 0 −30 −1 10 1 10 10 0 Frequency [GHz] Output Compression Point = f(I ), f = 2GHz P −1dB 20 1 18 2 16 16 3 14 14 12 10 −1dB 6 8 8 P 2 [dBm] 4 21 D 20 18 |S | [dB] 10 Frequency [GHz] Power Gain |S21| = f(ID) f = parameter in GHz 12 10 8 6 6 4 4 2 2 0 1 10 0 20 40 60 0 80 ID [mA] Data Sheet 0 20 40 60 80 ID [mA] 7 Rev. 2.1, 2008-04-24 BGA612 Measured Parameters Device Current I = f(V ) D CC R = parameter in Ω Device Current I = f(T ) D A V = 5V, R = parameter in Ω Bias CC 80 Bias 25 0 16 27 47 24 70 120 23 60 22 68 [mA] 40 135 20 I I 21 D 100 D [mA] 50 19 30 150 150 18 20 17 10 0 16 0 1 2 3 4 5 15 −40 6 VCC [V] −20 0 20 40 60 80 TA [°C] Noise figure F = f(f) VCC = 5V, R Bias = 135Ω, ZS = 50Ω T = parameter in °C A 3 +80°C 2.5 +25°C 2 F [dB] −20°C 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 Frequency [GHz] Data Sheet 8 Rev. 2.1, 2008-04-24 BGA612 Package Information 4 Package Information 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 0.2 M M A GPS05605 Figure 3 Package Outline SOT343 0.2 2.3 8 4 Pin 1 Figure 4 Data Sheet 2.15 1.1 Tape for SOT343 9 Rev. 2.1, 2008-04-24