D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 L7 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622L7 BGA622L7, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2006-05-19 Page Subjects (major changes since last revision) All Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.2, 2008-04-14 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Feature • High gain |S21|2 = 17.5 dB at 1.575 GHz |S21|2 = 16.8 dB at 1.9 GHz |S21|2 = 16.2 dB at 2.14 GHz • Low noise figure, NF = 0.95 dB at 1.575 GHz • Operating frequency range 0.5 - 6 GHz • Typical supply voltage: 2.75 V • On/Off-Switch • Output-match on chip, input pre-matched • Low external part count • Tiny TSLP-7-1 leadless package • 70 GHz fT - Silicon Germanium technology • 2 kV HBM ESD protection (Pin-to-Pin) • Pb-free (RoHS compliant) package 6 5 4 7 1 2 3 TSLP-7-1 Applications • LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN 9FF ,Q 2XW 2Q2II N2KP *1' %*$/B3LQBFRQQHFWLRQYVG Figure 1 Pin connection Description The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches off, it provides an insertion loss of 26 dB together with a high IIP3 up to 24 dBm at GPS frequencies. Type Package Marking BGA622L7 TSLP-7-1 BX Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.2, 2008-04-14 BGA622L7 Maximum Ratings 2 Maximum Ratings Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin VCC 3.5 V Voltage at pin Out 4 V 0.1 mA 1 mA 10 mA 6 dBm 35 mW 150 °C -65... 150 °C -65... 150 °C 2000 V Value Unit RthJS 240 Junction - soldering point 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W VCC Vout Current into pin In Iin Current into pin Out Iout Current into pin VCC IVcc Pin RF input power 1) Total power dissipation, TS < 142 °C Ptot Junction temperature TJ Ambient temperature range TA Storage temperature range TSTG ESD capability all pins (HBM: JESD22-A114) VESD 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Thermal resistance Parameter Symbol 1) Top View 1 In 2 7 6 BGA622L7 5 Out P-TSLP-7-1 3 4 150pF DC, 2.75V BGA622L7_S_Parameter_Circuit.vsd Figure 2 Data Sheet S-Parameter Test Circuit (loss-free microstrip line) 5 Rev. 2.2, 2008-04-14 BGA622L7 Electrical Characteristics 3 Electrical Characteristics 3.1 Electrical Characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 1.575 GHz, unless otherwise specified Table 3 Electrical Characteristics Parameter Symbol Values Insertion power gain |S21|2 |S21|2 RLin RLout F50Ω IIP3 17.5 dB -26 dB 5 dB 12 dB 0.95 dB -2 dBm IIP3 24 dBm Input power at 1 dB gain compression P-1dB -20 dBm Total device off current Itot-off 260 µA Total device on current Itot-on Von 5.8 mA Min. Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept point (On-State) 1) Input third order intercept point1) (Off - State) On / Off switch control voltage Typ. 0 Unit Max. 0.8 V Note / Test Condition ∆f = 1 MHz, PIN = -28 dBm ∆f = 1 MHz, PIN = -8 dBm VCC = 2.75 V, Vout = VCC VCC = 2.75 V VCC = 2.75 V ON-Mode: Vout = Von Voff 2.0 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Data Sheet 6 Rev. 2.2, 2008-04-14 BGA622L7 Electrical Characteristics 3.2 Electrical Characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 2.14 GHz, unless otherwise specified Table 4 Electrical Characteristics Parameter Symbol Values Min. Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept point (On-State) Typ. 2 1) Input third order intercept point1) (Off-State) Unit Max. Note / Test Condition |S21| |S21|2 RLin RLout F50Ω IIP3 16.2 dB -23 dB 6 dB 12 dB 1.05 dB 0 dBm ∆f = 1 MHz, PIN = -28 dBm IIP3 22 dBm ∆f = 1 MHz, PIN = -8 dBm Input power at 1 dB gain compression P-1dB -16 dBm 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Data Sheet 7 Rev. 2.2, 2008-04-14 BGA622L7 Measured Parameters 4 Measured Parameters 2 2 Power Gain |S | , G = f(f) 21 ma V = 2.75V, I = 5.8mA CC Off Gain |S | = f(f) 21 V = 2.75V, V = 2.75V, I tot−on CC 25 OUT tot−off = 0.3mA 0 −5 G ma 20 −10 −15 |S |2 15 −20 |S | [dB] 2 −25 21 |S21|2, Gma [dB] 21 10 −30 −35 5 −40 −45 0 −50 0 1 2 3 4 5 6 0 1 Frequency [GHz] Reverse Isolation |S | = f(f) 12 = 5.8mA V = 2.75V, I CC 2 3 4 5 6 5 6 Frequency [GHz] Matching |S |, |S | = f(f) 11 22 = 5.8mA V = 2.75V, I tot−on CC 0 tot−on 0 S11 −5 −10 −5 |S11|, |S22| [dB] −15 |S12| [dB] −20 −25 −30 −10 −35 −15 −40 S 22 −45 −50 −20 0 1 2 3 4 5 6 0 Frequency [GHz] Data Sheet 1 2 3 4 Frequency [GHz] 8 Rev. 2.2, 2008-04-14 BGA622L7 Measured Parameters Stability K, B = f(f) 1 VCC = 2.75V, I tot−on = 5.8mA Noise Figure F = f(f) VCC = 2.75V, I tot−on = 5.8mA, ZS = 50Ω 5 1.5 4.5 1.4 4 1.3 3.5 1.2 K 1.1 F [dB] K, B1 3 2.5 2 1 0.9 1.5 0.8 B1 1 0.7 0.5 0.6 0 0.5 0 2 4 6 8 10 0 0.5 1 Frequency [GHz] 1.5 2 2.5 3 Frequency [GHz] Device Current I = f(T , V ) tot−on A CC V = parameter in V CC Device Current I = f(V , T ) tot−on CC A T = parameter in °C A 8.5 8.5 3.4 8 8 7.5 7.5 −40 3.2 85 Itot−on [mA] Itot−on [mA] 20 7 3 6.5 7 6.5 2.8 6 6 2.6 5.5 5 −40 5.5 −20 0 20 40 60 5 2.6 80 TA [°C] Data Sheet 2.8 3 3.2 3.4 VCC [V] 9 Rev. 2.2, 2008-04-14 BGA622L7 Package Information Package Information Top view Bottom view 0.4 +0.1 1.3 ±0.05 0.05 MAX. 1 ±0.05 6 1.7 ±0.05 1.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) GPC09484 1) Dimension applies to plated terminal Figure 3 2 ±0.05 5 6 x 0.2 ±0.035 1) 4 1.1 ±0.035 1) 5 Package Outline TSLP-7-1 0.5 8 2.18 4 Pin 1 marking Figure 4 Data Sheet 1.45 CPSG9506 Tape for TSLP-7-1 10 Rev. 2.2, 2008-04-14