H11C4/ H11C5/ H11C6 Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current Features • • • • • • • • Turn on current (IFT), 5.0 mA typical Gate trigger current (IGT), 20 mA typical Surge anode current, 5.0 A Blocking voltage, 400 V gate trigger voltage (VGT), 0.6 V typical Isolation test voltage 5300 VRMS Solid State reliability Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals A 1 6 G C 2 5 A NC 3 4 C e3 i179006 Pb Pb-free Order Information • UL1577, File No. E52744 System Code H or J, Double Protection Description The H11C4/ H11C5/ H11C6 are optically coupled SCRs with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. The H11C4 and H11C5 are identical and have a maximum turn-on-current of 11 mA. The H11C6 has a maximum of 14 mA. Part Remarks H11C4 IFT ≤ 11 mA, DIP-6 H11C5 IFT ≤ 11 mA, DIP-6 H11C6 IFT ≤ 14 mA, DIP-6 H11C4-X006 IFT ≤ 11 mA, DIP-6 400 mil (option 6) H11C6-X009 IFT ≤ 14 mA, SMD-6 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Peak reverse voltage Forward continuous current Peak forward current Power dissipation Derate linearly from 25 °C Document Number 83610 Rev. 1.6, 26-Oct-04 1.0 ms, 1 % Duty Cycle Symbol Value VRM 6.0 Unit V IF 60 mA IFM 3.0 A Pdiss 100 mW 1.33 mW/°C www.vishay.com 1 H11C4/ H11C5/ H11C6 Vishay Semiconductors Output Parameter Test condition Symbol Value VRG 6.0 V VA 400 V IFRMS 300 mA IAS 5.0 A Reverse gate voltage Anode voltage DC or AC peak RMS forward current Surge anode current 10 ms duration Unit Peak forward current 100 µs, 1% Duty Cycle IFM 10 A Surge gate current 5.0 ms duration IGS 200 mA Pdiss 1000 mW 13.3 mW/°C Power dissipation Derate linearly from 25°C Coupler Parameter Test condition Symbol Value Unit VISO 5300 VRMS Isolation test voltage (between emitter and detector referred to standard climate 23 °C/ 50 % RH, DIN 50014) Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ Ω Total package dissipation Ptot Derate linearly from 25 °C 1011 400 mW 5.5 mW/°C Operating temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 150 °C 10 sec. Lead soldering time at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Forward voltage IF = 10 mA VF Reverse current VR = 3.0 V IR Capacitance VR = 0, f = 1.0 MHz CO Min Typ. Max 1.2 1.5 V 10 µA 50 Unit pF Output Symbol Min Forward blocking voltage Parameter RGK = 10 KΩ, TA = 100 °C, Id = 150 µA VDM 400 V Reverse blocking voltage RGK = 10 KΩ, TA = 100 °C, Id = 150 µA VDM 400 V On-state voltage IT = 300 mA Vt Holding current RGK = 27 KΩ, VFX = 50 V IH www.vishay.com 2 Test condition Typ. 1.1 Max Unit 1.3 V 500 µA Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors Typ. Max Unit Gate trigger voltage Parameter VFX = 100 V, RGK = 27 kΩ, RL=10 KΩ Test condition Symbol VGT Min 0.6 1.0 V Forward leakage current RGK = 10 KΩ, VRX = 400 V, IF = 0, TA = 100 °C IR 150 µA Reverse leakage current RGK = 10 KΩ, VRX = 400 V, IF = 0, TA=100 °C IR 150 µA Gate trigger current VFX = 100 V, RRG = 27 KΩ, RL = 10 KΩ IGT 20 Capacitance, Anode to gate V = 0, f = 1.0 MHz 20 pF Capacitance, Gate to cathode V = 0, f = 1.0 MHz 350 pF µA 50 Coupler Parameter Test condition VDM = 50 V, RGK = 10 KΩ Turn-on current VDM = 100 V, RGK = 27 KΩ Part Symbol Max Unit H11C4 IFT Min Typ. 20 mA H11C5 IFT 20 mA H11C6 IFT 30 mA H11C4 IFT 5.0 11 mA H11C5 IFT 5.0 11 mA H11C6 IFT 7.0 14 mA Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83610 Rev. 1.6, 26-Oct-04 www.vishay.com 3 H11C4/ H11C5/ H11C6 Vishay Semiconductors Option 6 Option 9 .375 (9.53) .395 (10.03) .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) ref. .0040 (.102) .0098 (.249) 18493 www.vishay.com 4 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83610 Rev. 1.6, 26-Oct-04 www.vishay.com 5