SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PTOT TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (Ic = 0) Continuous Collector Current Tc = 25°C Total Power Dissipation at Operating Junction Temperature Range Storage Temperature Range 1000V 500V 10V 4A 20W -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters Max Units RθJC Thermal Resistance, Junction To Case 6.25 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5977 Issue 2 Page 1 of 3 SILICON POWER NPN TRANSISTOR BUL54A-TO5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters ICBO Collector-Base Cut-Off Current ICEO Collector-Emitter Cut- off current IEBO Emitter-Base Cut-Off Current (1) Test Conditions Min VCB = 1000V IB = 0 TC = 125°C 100 VCE = 500V 100 VEB = 9V IC = 0 TC = 125°C 500 V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA 1000 V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA 10 VBE(sat) hFE (1) (1) Base-Emitter Saturation Voltage Forward-current transfer ratio µA 100 IC = 10mA Collector-Emitter Saturation Voltage Units 10 Collector-Emitter Breakdown Voltage VCE(sat) Max 10 V(BR)CEO (1) Typ IC = 100mA IB =20mA 0.05 0.1 IC = 0.5A IB =0.1A 0.15 0.2 IC = 1.0A IB = 0.2A 0.3 0.5 IC = 0.5A IB = 0.1A 0.8 1.0 IC = 1.0A IB = 0.2A 0.9 1.1 IC = 0.1A VCE = 5V 20 50 IC = 0.5A VCE = 5V 12 15 IC = 1.0A VCE = 1.0V 5 8 TC = 125°C 5 V DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cobo Output Capacitance VCB = 20V f = 1.0MHz 20 pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5977 Issue 2 Page 2 of 3 SILICON POWER NPN TRANSISTOR BUL54A-TO5 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-5 (TO-205AA) Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 5977 Issue 2 Page 3 of 3