SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg Collector – Base Breakdown Voltage Collector – Emitter Breakdown Voltage Emitter – Base Breakdown Voltage Collector Current Maximum Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 180V 90V 10V 12A 17A 4A 50W 0.4 W/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 2.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8178 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR SM58B ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters ICBO Collector-Base Leakage Current ICEO Collector-Emitter Leakage Current Emitter-Base Leakage Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IEBO V(BR)CBO V(BR)CEO V(BR)EBO VBE(sat) (1) (1) VCE(sat) hFE (1) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Gain Test Conditions Min. Typ Max. VCB = 180V 10 TC = 125°C 100 VCE = 80V 100 VEB = 9V 10 IC = 1.0mA 180 IC = 10mA 90 IE = 1.0mA 10 IC = 3A IB = 0.3A 0.9 1.1 IC = 6A IB = 0.6A 1.2 2.0 IC = 1.0A IB = 0.1A 0.1 0.2 IC = 3.0A IB = 0.3A 0.3 0.6 IC = 6.0A IB = 0.6A 1.0 1.5 IC = 0.3A VCE = 5.0V 26 80 IC = 3.0A IC = 5.0A VCE = 5.0V VCE = 1.0V 25 60 Units µA V - 8 DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 0.2A VCE = 4.0V 20 MHz Cobo Output Capacitance VCB = 10V f = 1.0MHz 44 pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8178 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR SM58B MECHANICAL DATA Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) 4.83 (0.190) 3.56 (0.140) 5.33 (0.210) 4.83 (0.190) 2 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. 14.73 (0.580) 12.70 (0.500) 6.35 (0.250) 4.60 (0.181) 1 2 3 1.78 (0.070) 0.99 (0.390) 0.66 (0.026) 0.41 (0.016) 1.02 (0.040) 0.38 (0.015) 2.54 (0.100) Nom. 2.92 (0.115) 2.03 (0.080) 5.08 (0.200) Nom. TO-220 Lead 1 – Base Lead 2 - Collector Lead 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8178 Issue 2 Page 3 of 3