BUX47 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • Hermetic Package 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) • Fast Turn-Off Time Applications 3 (case) The BUX47 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularily well suited for line operated switch mode applications. 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCER Collector – Base Voltage (RBE = 10Ω) 850V VCES Collector – Emitter Sustaining Voltage (VBE = 0) 850V VCEO Collector – Emitter Voltage (IB = 0) 400V VEBO Emitter – Base Voltage (IC = 0) 7V IC Collector Current ICM Peak Collector Current IB Base Current Ptot Total Power Dissipation 9A tp = <5ms Derate above 25°C TSTG Storage Temperature Range TJ Maximum Junction Temperature 15A 8A 125W 0.83°C / W –65 to +175°C +175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5516 Issue 1 BUX47 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* Collector - Emitter Sustaining Test Conditions IC = 0.2A Voltage L = 25mH VEBO Emitter – Base Voltage IC = 0 ICER Collector Cut-off Current VCE = 850V ICEV Collector Cut-off Current IB = 0 Min. Typ. Max. Unit 400 V IE = 50mA 7 30 0.4 RBE = 10Ω TC = 125°C 3 VCE = 850V VBE = –1.5V 0.15 VBE = -2.5V TC = 125°C 1.5 IEBO Emitter Cut-off Current IC = 0 VBE = –5V 1.0 VCE(sat)* Collector – Emitter IC = 6A IB = 1.2A 1.5 Saturation Voltage IC = 9A IB = 3A 3.0 VBE(sat)* Base–Emitter Saturation Voltage IC = 6A IB = 1.2A 1.6 ton Turn–On Time IC = 6A VCC = 150V 0.8 ts Storage Time IB1 = –IB2 = 1.2A tf Fall Time 2.5 mA V µs 0.8 THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case 1.2 °C/W *Pulsed : Pulse duration = 300 µs , duty cycle = 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5516 Issue 1