New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 1.8 nC APPLICATIONS • Load Switch for Portable Applications • DC/DC Converters TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 D1 Marking Code MH G2 3 4 D2 XXX Lot Traceability and Date Code D2 G1 G2 Part # Code 2.85 mm Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 20 3.7 3 3.4b, c 2.7b, c 15 1.17 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current IS Unit V A 0.95b, c 1.4 0.9 PD 1.14b, c 0.73b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter b, d t≤5s Steady State Maximum Junction-to-Ambient Maximum Junction-to-Foot Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 Symbol RthJA RthJF Typical 93 75 Maximum 110 90 Unit °C/W www.vishay.com 1 New Product Si3932DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 29 mV/°C -4 1.2 2.2 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 10 µA A VGS = 10 V, ID = 3.4 A 0.047 0.058 VGS = 4.5 V, ID = 3.0 A 0.058 0.073 VDS = 15 V, ID = 3.4 A 10 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 235 VDS = 15 V, VGS = 0 V, f = 1 MHz 45 VDS = 15 V, VGS = 10 V, ID = 3.4 A 3.7 6 1.8 3 16 tr 0.74 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 1 5 10 10 20 15 30 10 20 tf 10 20 td(on) 5 10 15 30 tr td(off) nC 0.42 f = 1 MHz td(on) td(off) pF VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω tf 10 20 10 20 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.17 15 IS = 2.7 A, VGS = 0 V IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 10 20 ns 4 10 nC 6 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 New Product Si3932DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 V GS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 V GS = 3 V 6 T C = - 55 °C 3 2 T C = 25 °C 3 1 T C = 125 °C V GS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 2.5 3.0 25 30 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 0.10 250 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 V GS = 4.5 V 0.06 V GS = 10 V 0.04 Ciss 200 150 100 Coss 0.02 50 Crss 0 0.00 0 3 6 9 12 0 15 5 ID - Drain Current (A) 10 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 3.4 A ID = 3.4 A 1.6 V DS = 15 V V DS = 7.5 V 6 V DS = 24 V 4 2 V GS = 10 V, V GS = 4.5 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 4 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3932DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.14 ID = 3.4 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.12 T J = 150 °C 10 T J = 25 °C 1 0.10 0.08 T J = 125 °C 0.06 T J = 25 °C 0.04 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.9 6 ID = 250 μA 1.8 5 1.7 4 Power (W) VGS(th) (V) 1.6 1.5 1.4 3 2 1.3 1 1.2 1.1 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 T J - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on) * I D - Drain Current (A) 10 100 μs 1 1 ms TA = 25 °C Single Pulse 10 ms 0.1 BVDSS Limited 0.01 0.1 1 10 100 ms 1 s, 10 s DC 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 New Product Si3932DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1.6 4 Power Dissipation (W) I D - Drain Current (A) 1.2 Package Limited 3 2 0.8 0.4 1 0 0.0 0 25 50 75 100 T C - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T C - Foot Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 www.vishay.com 5 New Product Si3932DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 150 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65736. www.vishay.com 6 Document Number: 65736 S10-0642-Rev. A, 22-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1