VISHAY SI8800EDB-T2-E1

Si8800EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.080 at VGS = 4.5 V
2.8
VDS (V)
20
0.090 at VGS = 2.5 V
2.6
0.105 at VGS = 1.8 V
2.4
0.150 at VGS = 1.5 V
2.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 1500 V
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.2 nC
APPLICATIONS
MICRO FOOT
Bump Side View
S
• Portable Devices such as Cell Phones,
Smart Phones and MP3 Players
- Load Switch
- Small Signal Switch
Backside View
G
D
S
3
4
800
1
XXX
2
D
R
G
Device Marking: 800
xxx = Date/Lot Traceability Code
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TA = 70 °C
2.2a
ID
TA = 25 °C
2b
1.6b
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
0.7a
TA = 25 °C
IS
TA = 25 °C
0.4b
0.9a
TA = 70 °C
0.6a
PD
TA = 25 °C
W
0.5b
0.3b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
15
TA = 25 °C
Maximum Power Dissipation
V
2.8a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)c
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
Symbol
t5s
RthJA
Typical
Maximum
105
135
200
260
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
a
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
RDS(on)
gfs
ID = 250 µA
VDS = VGS , ID = 250 µA
V
18
mV/°C
- 2.3
0.4
1
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = 0 V, VGS = ± 8 V
±6
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 4.5 V
10
V
µA
A
VGS 4.5 V, ID = 1 A
0.066
0.080
VGS 2.5 V, ID = 1 A
0.072
0.090
VGS 1.8 V, ID = 1 A
0.082
0.105
VGS 1.5 V, ID = 0.5 A
0.095
0.150
VDS = 10 V, ID = 1 A
10

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 10 V, VGS = 8 V, ID = 1 A
VDS = 10 V, VGS = 4.5 V, ID = 1 A
td(off)
8.3
5
0.42
f = 1 MHz
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 4.5 V, Rg = 1 
1
k
65
130
85
170
900
1800
tf
350
700
td(on)
25
50
tr
td(off)
nC
0.5
td(on)
tr
5.5
3.2
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 8 V, Rg = 1 
tf
40
80
1100
2200
350
700
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
0.7
15
IS = 1 A, VGS 0 V
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
1
1.5
V
13
25
ns
5
10
nC
8
5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-1
1.2
10-3
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
1.5
T J = 25 °C
0.9
0.6
0.3
10-5
T J = 150 °C
T J = 25 °C
10-7
10-9
0.0
10-11
0
V GS - Gate-to-Source Voltage (V)
3
6
9
12
V GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
3
6
9
12
0
15
15
15
5
V GS = 5 V thru 2 V
4
9
I D - Drain Current (A)
I D - Drain Current (A)
12
V GS = 1.5 V
6
3
3
2
T C = 25 °C
1
T C = 125 °C
V GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
T C = - 55 °C
0.3
0.6
0.9
1.2
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.15
1.5
8
VGS - Gate-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
ID = 1 A
0.12
V GS = 1.5 V
V GS = 1.8 V
0.09
V GS = 2.5 V
0.06
V GS = 4.5 V
0.03
0.00
V DS = 5 V
6
V DS = 10 V
4
V DS = 16 V
2
0
0
3
6
9
12
15
0
1
2
3
4
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
5
6
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
V GS = 4.5 V, V GS = 2.5 V, V GS = 1.8 V; I D = 1 A
1.4
1.3
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
1.5
1.2
1.1
V GS = 1.5 V; I D = 0.5 A
1.0
0.9
T J = 150 °C
T J = 25 °C
1
0.8
0.7
- 50
- 25
0
25
50
75
100
125
0.1
0.0
150
0.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
0.8
0.14
0.7
0.12
ID = 1.5 A; T J = 125 °C
0.6
0.10
0.08
VGS(th) (V)
R DS(on) - On-Resistance (Ω)
0.4
V SD - Source-to-Drain Voltage (V)
ID = 0.5 A; T J = 125 °C
0.4
ID = 1.5 A; T J = 25 °C
0.06
ID = 0.5 A; T J = 25 °C
0.3
0.2
- 50
0.04
0
1
2
3
ID = 250 μA
0.5
4
5
- 25
V GS - Gate-to-Source Voltage (V)
0
25
50
75
100
125
150
T J - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
14
12
Power (W)
10
8
6
4
2
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
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Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
I D - Drain Current (A)
Limited by RDS(on) *
10
100 μs
1
1 ms
0.1
10 ms
TA = 25 °C
Single Pulse
100 ms, 1 s
10 s, DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.0
0.8
Power Dissipation (W)
I D - Drain Current (A)
2.5
2.0
1.5
1.0
0.6
0.4
0.2
0.5
0.0
0.0
0
25
50
75
100
T A - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
125
150
25
50
75
100
125
150
T A - Ambient Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 185 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
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Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8800EDB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 mm x 2 mm, 0.4 mm PITCH)
S
D
G
e
800
S
s
XXX
D
4xØb
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
3
A
e
2
A2
Solder Mask ~ Ø 0.215
4
1
A1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. is location of pin 1.
·
Dim.
Millimetersa
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
0.314
0.357
0.400
0.0124
0.0141
0.0157
A1
0.127
0.157
0.187
0.0050
0.0062
0.0074
A2
0.187
0.200
0.213
0.0074
0.0079
0.0084
b
0.165
0.175
0.185
0.0064
0.0068
0.0072
e
0.400
0.0157
s
0.180
0.200
0.220
0.0070
0.0078
0.0086
D
0.760
0.800
0.840
0.0299
0.0314
0.0330
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66700.
Document Number: 66700
S11-1145-Rev. B, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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