VISHAY SI1016CX

New Product
Si1016CX
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
- 20
RDS(on) ()
ID (A)
0.396 at VGS = 4.5 V
0.5
0.456 at VGS = 2.5 V
0.2
0.546 at VGS = 1.8 V
0.2
0.760 at VGS = 1.5 V
0.05
0.756 at VGS = - 4.5 V
- 0.35
1.038 at VGS = - 2.5 V
- 0.35
1.440 at VGS = - 1.8 V
- 0.1
2.4 at VGS = - 1.5 V
- 0.05
Qg (Typ.)
0.75 nC
1 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• High-Side Switching
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Typical ESD Protection: N-Channel 1500 V
P-Channel 1000 V (HBM)
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch, Small Signal Switches and Level-Shift
Switches
- Battery Operated Systems
- Portable
D1
SOT-563
SC-89
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
S2
G1
G2
Marking Code: 5
Top View
D2
S1
N-Channel MOSFET
Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Source Drain Current Diode Current
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
N-Channel
20
±8
0.6a, b
- 0.6a, b
0.49a, b
- 0.49a, b
IDM
2
- 1.5
IS
0.18a, b
- 0.18a, b
0.22a, b
0.22a, b
0.14a, b
0.14a, b
ID
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
P-Channel
- 20
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
Unit
V
A
W
°C
260
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
Symbol
a, c
t5s
Steady State
RthJA
P-Channel
Typ.
Max.
Typ.
Max.
470
565
470
565
560
675
560
675
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 675 °C/W.
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
N-Ch
20
VGS = 0 V, ID = - 250 µA
P-Ch
- 20
ID = 250 µA
N-Ch
17
ID = - 250 µA
P-Ch
- 12
ID = 250 µA
N-Ch
- 1.8
ID = - 250 µA
P-Ch
N-Ch
0.4
1
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
-1
IGSS
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
IDSS
ID(on)
RDS(on)
Forward Transconductanceb
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
mV/°C
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 4.5 V
Gate-Source Leakage
V
1.8
N-Ch
±1
P-Ch
±1
N-Ch
± 30
P-Ch
± 30
N-Ch
1
-1
VDS = - 20 V, VGS = 0 V
P-Ch
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS 5 V, VGS = 4.5 V
N-Ch
2
VDS - 5 V, VGS = - 4.5 V
P-Ch
- 1.5
VGS = 4.5 V, ID = 0.5 A
N-Ch
0.330
P-Ch
0.630
0.756
VGS = 2.5 V, ID = 0.2 A
N-Ch
0.380
0.456
0.396
VGS = - 2.5 V, ID = - 0.35 A
P-Ch
0.865
1.038
VGS = 1.8 V, ID = 0.2 A
N-Ch
0.420
0.546
VGS = - 1.8 V, ID = - 0.1 A
P-Ch
1.2
1.44
VGS = 1.5 V, ID = 0.05 A
N-Ch
0.505
0.760
VGS = - 1.5 V, ID = - 0.05 A
P-Ch
1.6
2.4
VDS = 10 V, ID = 0.5 A
N-Ch
2
VDS = - 10 V, ID = - 3.6 A
P-Ch
1
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
µA
A
VGS = - 4.5 V, ID = - 0.35 A
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
V
N-Ch
43
P-Ch
45
N-Ch
14
P-Ch
15
N-Ch
8
P-Ch
10

S
pF
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Qg
VDS = 10 V, VGS = 4.5 V, ID = 0.6 A
N-Ch
1.3
2
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.4 A
P-Ch
1.65
2.50
N-Ch
0.75
1.2
2
N-Channel
VDS = 10 V, VGS = 2.5 V, ID = 0.6 A
P-Ch
1
N-Ch
0.15
P-Channel
VDS = - 10 V, VGS = - 2.5 V, ID = - 0.4 A
P-Ch
0.2
N-Ch
0.13
Qgs
Qgd
Rg
P-Ch
f = 1 MHz
nC
0.26
N-Ch
2.4
12.2
24.4
P-Ch
2.4
12
24

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
N-Channel
VDD = 10 V, RL = 20 
ID  0.5 A, VGEN = 4.5 V, Rg = 1 
P-Channel
VDD = - 10 V, RL = 33.3 
ID  - 0.3 A, VGEN = - 4.5 V, Rg = 1 
N-Channel
VDD = 10 V, RL = 20 
ID  0.5 A, VGEN = 8 V, Rg = 1 
P-Channel
VDD = - 10 V, RL = 33.3 
ID  - 0.3 A, VGEN = - 8 V, Rg = 1 
N-Ch
11
20
P-Ch
9
18
N-Ch
16
24
P-Ch
10
20
N-Ch
26
39
P-Ch
10
20
N-Ch
11
20
P-Ch
8
16
N-Ch
2
4
P-Ch
1
2
N-Ch
13
20
P-Ch
8
16
N-Ch
7
14
18
P-Ch
9
N-Ch
5
10
P-Ch
5
10
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
N-Ch
2
P-Ch
- 1.5
IS = 0.5 A, VGS = 0 V
N-Ch
0.85
1.2
IS = - 3.7 A, VGS = 0 V
P-Ch
- 0.87
- 1.2
N-Ch
10
20
P-Ch
16
24
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C
N-Ch
2
4
P-Ch
8
20
Reverse Recovery Fall Time
ta
P-Channel
IF = - 0.3 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
5
P-Ch
11
Reverse Recovery Rise Time
tb
N-Ch
5
P-Ch
5
A
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
1.0E-04
TJ = 150 °C
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.0E-05
0.6
0.4
TJ = 25 °C
0.2
1.0E-06
TJ = 25 °C
1.0E-07
1.0E-08
0
1.0E-09
0
2
4
6
8
10
12
0
14
4
7
11
14
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
2
0.5
VGS = 5 V thru 2 V
0.4
ID - Drain Current (A)
ID - Drain Current (A)
1.5
VGS = 1.5 V
1
0.3
TC = 25 °C
0.2
0.5
0.1
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.3
0.6
0.9
1.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
60
0.80
Ciss
VGS = 1.8 V
45
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 1.5 V
0.60
VGS = 2.5 V
0.40
30
Coss
15
VGS = 4.5 V
Crss
0
0.20
0
0.5
1
1.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
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2
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.6
ID = 0.5 A
VDS = 5 V
VGS = 4.5 V
1.4
6
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.6 A
VDS = 10 V
4
VDS = 16 V
2
1.2
1.0
0.8
VGS = 2.5 V
0
0
0.5
1
0.6
- 50
1.5
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.8
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.5 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
0.6
TJ = 125 °C
0.4
TJ = 25 °C
0.2
0
0.3
0.6
0.9
1.2
1.5
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.75
2.7
ID = 250 μA
2.25
0.65
Power (W)
VGS(th) (V)
1.8
0.55
1.35
0.9
0.45
0.45
0.35
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.24
10
0.18
BVDSS Limited
100 μs
1
Power (W)
ID - Drain Current (A)
Limited by RDS(on)*
1 ms
10 ms
0.12
0.1
0.06
100 ms
TC = 25 °C
Single Pulse
0.01
0.1
1s
10 s, DC
1
10
0
100
0
25
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 675 °C/W
3. TJM - TA = PDMZthJA(t)
0.01
0.0001
4. Surface Mounted
Single Pulse
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.010
1.E-04
1.E-05
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.008
0.006
0.004
TJ = 25 °C
TJ = 150 °C
1.E-06
TJ = 25 °C
1.E-07
0.002
0.000
1.E-08
0
3
6
9
12
0
6
9
12
VGS - Gate-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
1.5
VGS = 2.5 V
ID - Drain Current (A)
1.2
0.9
VGS = 2 V
0.6
0.6
0.4
TC = 25 °C
0.2
VGS = 1.5 V
0.3
15
0.8
VGS = 5 V thru 3 V
ID - Drain Current (A)
3
TC = 125 °C
0
TC = - 55 °C
0
0
0.5
1
1.5
2
0
0.4
VDS - Drain-to-Source Voltage (V)
1.2
1.6
2
Transfer Characteristics
Output Characteristics
2
90
VGS = 1.8 V
1.5
72
VGS = 1.5 V
VGS = 2.5 V
1
0.5
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.8
VGS - Gate-to-Source Voltage (V)
54
Ciss
36
Coss
18
Crss
0
0
0
0.3
0.6
0.9
1.2
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
1.5
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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This document is subject to change without notice.
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New Product
Si1016CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
6
VDS = 5 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.35 A
VGS = 2.5 V
ID = 0.4 A
VDS = 10 V
4
VDS = 16 V
2
0
0
0.45
0.9
1.35
1.3
VGS = 4.5 V
1.1
0.9
0.7
- 50
1.8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
10
1.2
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.35 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
1.0
TJ = 125 °C
0.8
TJ = 25 °C
0.6
0.4
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.7
0.7
2.25
0.6
Power (W)
VGS(th) (V)
1.8
ID = 250 μA
0.5
1.35
0.9
0.4
0.45
0.3
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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8
125
150
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1016CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.24
Limited by RDS(on)*
0.18
100 μs
1 ms
Power (W)
ID - Drain Current (A)
1
10 ms
0.1
100 ms
1s
10 s, DC
0.01
0.12
0.06
BVDSS Limited
TC = 25 °C
Single Pulse
0
0.001
0.1
1
10
0
100
25
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 675 °C/W
3. TJM - TA = PDMZthJA(t)
0.01
0.0001
4. Surface Mounted
Single Pulse
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67535.
Document Number: 67535
S11-0655-Rev. A, 11-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89: 6Ć LEADS (SOTĆ563F)
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3.
3
Dimensions in millimeters.
Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
Note
Symbol
Tolerances
Of Form And
Position
A
0.56
0.60
aaa
0.10
A1
0.00
0.10
bbb
0.10
b
0.15
0.30
ccc
0.10
c
0.10
0.18
D
1.50
1.70
E
1.55
1.70
Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
E1
1.20 BSC
e
0.50 BSC
44.
Datums A, B and D to be determined 0.10 mm from the lead tip.
e1
1.00 BSC
Terminal numbers are shown for reference only.
L
0.35 BSC
5.
5
L1
0.20 BSC
6.
6
These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Document Number: 71612
25-Jun-01
6
DETAIL “A”
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.
SECTION B-B
C
2, 3
2, 3
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
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21
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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1