SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability • Optimized turn-on and turn-off characteristics DO-200AA • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AA • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 430 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM trr TJ Document Number: 93175 Revision: 04-Aug-08 TEST CONDITIONS Ths Ths VALUES UNITS 430 A 55 °C 675 A 25 °C 50 Hz 6180 60 Hz 6470 50 Hz 191 60 Hz 175 Range 400 to 1600 V 1.0 to 1.5 µs TJ 25 - 40 to 125 For technical questions, contact: [email protected] A kA2s °C www.vishay.com 1 SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 SD403C..S10C SD403C..S15C IRRM MAXIMUM AT TJ = 125 °C mA 35 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) Maximum peak, one-cycle , non-repetitive forward current t = 8.3 ms t = 10 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 6470 5445 Sinusoidal half wave, initial TJ = TJ maximum 191 175 123 t = 0.1 to 10 ms, no voltage reapplied 1910 VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.00 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.20 Low level of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.56 High level of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.70 Ipk = 1350 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 1.83 VFM kA2s 135 Low level value of threshold voltage Maximum forward voltage drop A 5200 100 % VRRM reapplied t = 8.3 ms I2√t °C 675 t = 10 ms Maximum I2√t for fusing 55 (75) 6180 t = 10 ms I2t A t = 10 ms t = 8.3 ms Maximum I2t for fusing UNITS 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM VALUES 430 (210) kA2√s V mΩ V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S10 1.0 S15 1.5 www.vishay.com 2 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/µs) 750 25 IFM Vr (V) trr AT 25 % IRRM (µs) Qrr (µC) Irr (A) dir dt - 30 2.4 52 33 2.9 90 44 For technical questions, contact: [email protected] trr t Qrr IRM(REC) Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ - 40 to 125 TStg - 40 to 150 UNITS °C RthJ-hs DC operation single side cooled 0.16 DC operation double side cooled 0.08 K/W Mounting force, ± 10 % Approximate weight See dimensions - link at the end of datasheet Case style 4900 (500) N (kg) 70 g DO-200AA ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.008 0.008 120° 0.012 0.013 0.013 0.013 90° 0.016 0.016 0.018 0.018 60° 0.024 0.024 0.025 0.025 30° 0.042 0.042 0.042 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93175 Revision: 04-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A 130 S D 4 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .1 6 K / W 120 110 100 C o nduc tio n An g le 90 80 1 80° 60° 30° 90° 1 20° 70 0 50 100 1 50 2 00 2 50 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e (° C ) M a x im u m A llo w a b le He a t sin k T e m p e ra t ure (°C ) 130 SD 4 0 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K / W 120 110 100 90 C o ndu c tio n Pe rio d 80 70 60 90° 50 30 ° 0 A v e ra g e F o rw a r d C u rre n t (A ) 100 2 00 30 0 4 00 DC 5 00 600 7 00 A v e ra g e F o rw a r d C u rre n t (A ) 800 S D 4 0 3 C ..C Se rie s (S in gle Sid e C o o le d ) R thJ-h s (D C ) = 0 .1 6 K /W 120 110 100 C o ndu ctio n Pe rio d 90 80 30 ° 60° 70 9 0° 1 2 0° 60 180 ° DC 2 50 30 0 50 0 50 100 150 20 0 35 0 Maxim um Average Forw ard Pow er Loss (W ) M a x im um A llo w a b le H e at sin k T e m p e ra tu re ( °C ) 1 8 0° Fig. 4 - Current Ratings Characteristics 130 180° 120° 90° 60° 30° 700 600 500 RM S Limit 400 300 C o ndu c tio n Ang le 200 SD403C..C Series TJ = 125°C 100 0 0 A v e ra g e F o r w a rd C u rr e n t (A ) 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics SD403C..C Series (Doub le Side Cooled) R th J-hs (DC) = 0.08 K/W 120 110 100 C o nd uctio n A ng le 90 80 30° 70 60° 90° 120° 180° 60 50 0 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics M a x im um A v e ra g e Fo rw a rd Po w e r Lo ss (W ) 1 10 0 130 Maxim um Allowable Heatsink Tempera ture (°C ) 1 2 0° 40 Fig. 1 - Current Ratings Characteristics www.vishay.com 4 60° 1 00 0 DC 1 8 0° 1 2 0° 90° 60° 30° 90 0 80 0 70 0 60 0 50 0 RM S Lim it 40 0 C o ndu ctio n Pe rio d 30 0 20 0 SD 4 0 3 C ..C S e r ie s TJ = 1 2 5° C 10 0 0 0 1 00 20 0 3 00 400 5 00 60 0 7 00 A v e ra g e F o rw a rd C u rre n t (A ) Fig. 6 - Forward Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A A t A n y R a t e d Lo a d C o n d it io n A n d W it h R a t e d V RR MA p p lie d Fo llo w in g S u rg e . In it ia l T J = 1 2 5° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 5 50 0 5 00 0 1 4 50 0 4 00 0 3 50 0 3 00 0 S D 4 0 3 C ..C S e rie s 2 50 0 2 00 0 1 10 1 00 Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N ) T ra n sie n t T h e rm al Im pe d an c e Z thJ-hs ( K / W ) P e a k H a lf Sin e W a v e F o rw a rd C u rre n t (A ) 6 00 0 SD 4 0 3 C ..C S e rie s 0 .1 S te a d y St a t e V a lu e R t hJ-hs = 0 .1 6 K /W 0. 01 ( S in g le Sid e C o o le d ) R thJ- hs = 0 .0 8 K /W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 S q u a re W a v e P u lse D u ra tio n ( s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2 .8 Maxim um Non Rep etitive Surge Current Versus Pulse Train D uration . Initial TJ = 125°C No Voltage Reapplied Rated V RR MReapplied 6000 5000 M a x im u m R e ve rse R e c o v e ry T im e - T rr ( µ s) Peak H alf Sine W ave Forwa rd Current (A) 7000 4000 3000 2000 SD 403C..C Series 1000 0 .0 1 0 .1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics I FM = 7 50 A 2 .4 Squa re Pulse 2 .2 40 0 A 2 20 0 A 1 .8 1 .6 10 100 Rat e O f Fall O f Forw ard Current - d i/dt (A /µs) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Recovery Time Characteristics 1 0 0 00 T J = 1 2 5 °C 1000 1 00 SD 4 0 3 C ..C Se r ie s 10 0 1 2 3 4 5 6 7 In st an ta n e o us Fo rw ar d V o lta ge ( V ) Fig. 9 - Forward Voltage Drop Characteristics Document Number: 93175 Revision: 04-Aug-08 M a xim um R e v e rse R e c o v e ry C h a rg e - Q rr (µ C ) 14 0 T J = 2 5 °C Ins tan ta ne o u s Fo rw ard C urr e nt ( A ) 2 .6 1 Pulse Train Duration (s) SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 13 0 I FM = 7 50 A 12 0 Squa re Pulse 11 0 4 00 A 10 0 90 80 200 A 70 60 50 40 SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 30 20 10 0 20 40 60 80 100 R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 12 - Recovery Charge Characteristics For technical questions, contact: [email protected] www.vishay.com 5 SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A 170 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC ) Maxim um Rev erse Recov ery Cur ren t - Irr (A) 90 I FM = 750 A 80 Squa re Pu lse 4 00 A 70 20 0 A 60 50 40 30 SD40 3C..S10C Series TJ = 12 5 °C; V r = 30V 20 10 10 20 30 4 0 50 60 7 0 80 9 0 10 0 Sq uare Pulse 150 140 130 40 0 A 120 110 100 20 0 A 90 80 70 SD 4 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 ° C ; V r = 3 0 V 60 50 0 20 40 60 80 10 0 Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/µs) Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 13 - Recovery Current Characteristics Fig. 15 - Recovery Charge Characteristics 3 .5 130 M a x im um Re v e rse Re c o v e ry C u rre n t - Irr (A ) M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s) I FM = 75 0 A 160 S D 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 °C ; V r = 3 0 V 3 I FM = 750 A Sq uare Pulse 2 .5 400 A 2 2 00 A 1 .5 10 10 0 120 I FM = 750 A 110 Squ are Pu lse 100 90 40 0 A 80 70 2 00 A 60 50 40 SD 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 °C ; V r = 3 0 V 30 20 10 1 0 20 3 0 40 5 0 60 70 80 9 0 10 0 R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/µs) Rate O f Fall O f Fo rw ard C urren t - di/d t (A/µs) Fig. 14 - Recovery Time Characteristics Fig. 16 - Recovery Current Characteristics 1E 4 20 jo u le s p e r p ulse Pe a k Fo rw ard C u rre n t (A ) 1 2 4 20 jo ule s p er pulse 10 1 0 .4 0.2 1E 3 0.2 0 .1 2 4 10 0.4 0.1 0. 04 0. 04 0 .02 0 .01 1E 2 tp 1E 1 1E 1 SD 40 3 C ..S1 0 C S e ri es Si nu soi dal Pul se T J = 1 2 5°C , V RRM = 8 0 0 V d v/ d t = 10 0 0V / µs 1 E2 tp 1E3 1E 4 SD 4 0 3 C..S1 0C Se rie s T rape zo idal Pulse TJ = 1 2 5° C, V R R M = 8 0 0 V d v/ dt = 1 0 0 0 V/ µs ; d i/ dt= 5 0 A / µs 1E1 P u lse B a se w id t h (µ s) 1 E2 1E3 1E4 P ulse B a se w id t h (µ s) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A 1E4 P e a k F o r w a rd C u rre n t (A ) 2 0 jo ule s pe r pu lse 1 2 10 4 1 0.4 10 2 0 jo ules pe r pulse 0 .4 0.2 1E3 2 4 0 .2 0. 1 0 .1 0 .04 0 .02 1E2 tp SD 4 0 3. .S15 C Se ri es Si nu so idal Pu ls e T J = 1 2 5°C , V R R M = 1 1 2 0 V dv / d t = 10 0 0 V/ µ s 1E1 1E1 1 E2 SD 4 0 3 C..S1 5C Se rie s Trape zo id al Puls e TJ = 1 2 5° C, V RR M = 11 20 V d v/ dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s tp 1 E3 1 E1 1 E4 1E2 1E3 1 E4 P u lse Ba se w id t h (µ s) Pu lse Ba se w id t h (µ s) Fig. 18 - Maximum Total Energy Per Pulse Characteristics ORDERING INFORMATION TABLE Device code SD 40 3 C 16 S15 C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = PUK case DO-200AA LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93175 Revision: 04-Aug-08 http://www.vishay.com/doc?95248 For technical questions, contact: [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 13.7 (0.54) 0.3 (0.01) MIN. both ends 14.4 (0.57) 19 (0.75) DIA. MAX. 2 places 38 (1.50) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95248 Revision: 06-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000