RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. Two identical amplifier channels are provided to achieve a typical total combined (using an off-chip combiner) output power of 33 dBm at 3 dB gain compression. A single channel provides typically, 18 dB small signal gain and 31 dBm output power at 1 dB gain compression. Two Identical Channels 21.0 dB Typical Small Signal Gain, Single Channel 2.0:1 Typical Input SWR, 2.5:1 Typical Output SWR, Single Channel 31 dBm Output Power at 1 dB Gain Compression, Single Channel 32 dBm Output Power at 3 dB Gain Compression, Single Channel 34 dBm Output Power at 1 dB Gain Compression, Dual Channel 22% Typical Power Added Efficiency at 1 dB Gain Compression Chip size: 6.55 mm x 5.15 mm x 0.1 mm Absolute Maximum Ratings Parameter Positive Drain DC Voltage Negative DC Voltage Simultaneous (Vd-Vg) RF CW Input Power (50 Ω source) Drain Current Storage Temperature Operating Base Plate Temp Thermal Resistance (Channel to Backside) (Single Channel) Performance Characteristics (at 25°C) 50 Ω system, Vd=+8V, Quiescent Current (Idq=600 mA) Parameter Min Typ Frequency Range Small Signal Gain P1dB Compression P3dB Compression PAE at 1 dB Gain Comp. 6.0 15 28 30 12 21 31 32 22 (Photo TBS) Symbol Value Unit Vd Vg Vdg Pin Id Tstg Tc 8.5 -2 +10.5 27 1.2 -55 to +125 -40 to +85 V V V dBm A °C °C Rjc 12 °C/W Max Unit Parameter 18.0 GHz dB dBm dBm % Input Return Loss Output Return Loss Gate Voltage (Vg)1 Gain vs. Temp. 0~85°C Min Typ 9.5 7.4 -0.4 -0.025 Max Unit dB dB V dB/°C Note: Quiescent Bias VD = +8V, ID = 600mA/channel, TC = +25°C. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typical 2 mil gap between the chip and the substrate material. Figure 1 Functional Block Diagram CHANNEL 1 VD VG RF IN 1 RF OUT 1 VG VD VD CHANNEL 2 VG RF IN 2 RF OUT 2 VG VD Figure 2 Chip Layout and Bond Pad Locations (Chip size=6.55mm x 2.67mm x 100µm. Back of Chip is DC Ground) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Application Note Scope: This application note briefly describes the procedure for evaluating the Raytheon RMPA61800, high efficiency 0.25 µm PHEMT Dual Channel Amplifier. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. Carrier Assembly: The attached drawing shows a recommended off chip bias scheme for the RMPA61800. The MMIC is mounted on a Cu shim or ridge, which in turn blazed to Cu-Mo-Cu, or Cu-W, or Mo carrier with alumina 50-ohm microstrip lines for in/out RF connections and off-chip DC bias components. The drawing shows the placement of components and bond wire connections. The following should be noted: (6) Bias decoupling capacitors of 0.01 uF (multilayer) and 100 pF (single layer) are used on the carrier. (7) Close placement of external components is essential to stability. (8) The test fixture may require a pair of 25 µF capacitor on the drain and gate(optional) bias terminals to prevent oscillations caused by the test fixture connections. (9) For Laboratory testing, use good power supplies. Set current limits on supplies to RF drive-up current level. Keep supply wire/leads as short as possible and if required use additional bypass capacitors at the fixture terminals. (1) 1 mil gold bond wires are used on the carrier assembly. (2) Use 3-1 mil gold wires about 25 mils in length for optimum RF performance. (3) Vg: Gate Voltage (negative) input terminal for amplifier stages. For best results, the gate supply should have a source resistance less than 100 ohms. (4) Vd: Drain Voltage (positive) input terminal for amplifier stages. (5) Vg and Vd on both sides of the MMIC must be biased to insure proper operation. Figure 3 Recommended Application Schematic Circuit Diagram (single channel represented) Bias application is identical for each channel. Drain Supply (Vd= +8 V)* 10,000pF 100pF L Bond Wire Ls L MMIC Chip RF IN RF OUT L Ground 100pF (Back of Chip) L Bond Wire Ls 10,000pF Gate Supply (Vg)* *Vg and Vd on both sides of the MMIC must be biased to insure proper operation. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Application Note Example of Assembled Combiner Module Recommended Procedure for biasing and operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER. THIS AMPLIFIER IS AN ESD SENSITIVE DEVICE. The following procedure must be followed to properly test the amplifier: Step 3: After the bias condition is established, RF input Step 1: Slowly apply Gate Voltage (typical Vpinch-off= signal may now be applied at the appropriate -1.5V) to terminal Vg. frequency band. Step 2: Slowly apply Drain Voltage at Vd (<+5 volts) and Step 4: Follow Turn-off sequence: monitor drain current Ids. Adjust negative voltage Vg to set the drain current (Ids) to (i) RF input power=off, approximately 600 mA per channel. Adjust the (ii) Vd=off, drain voltage Vg to nominal +8 volts (adjust (iii) Vg=off. Gate Voltage Vg, if needed, to maintain the drain current at Ids. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Typical Two Channels Combined Characteristics Small Signal Gain Vd=8.0V, Idq=1.2A 25 J J J J J J J J J J J J J 20 J 15 J J 10 J 5 0 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Power Added Efficiency @ P1dB Vd=8.0V, Idq=1.2A 30 J 25 J 20 J J J J J J J J J J 15 J 10 5 0 4 6 8 10 12 14 Frequency (GHz) 16 18 20 The above data is derived from fixtured measurements which includes 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the RF input and output. The Id @ 1 dB compression increases to approximately 2 A. The dc supply should be able to support the required current to achieve the above performance. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Typical Characteristics, Two Channels Combined Output Power @ 1dB Compression Vd=8.0V, Idq=1.2A 37 36 B B B 35 B B 34 B B B B B B B 33 B 32 31 30 29 28 27 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Input and output Return Loss Vd=8.0V, Idq=1.2A 0 5 10 B 15 J 20 J 25 30 35 J J B J S22 J B B J J J J B B B J J B B B J B BJB J J J B J JB B B JB B BJ B J B J B J J J B JB S11 B 40 4 6 8 10 12 14 Frequency (GHz) 16 18 20 The above data is derived from fixtured measurements which includes 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the RF input and output. The Id @ 1 dB compression increases to approximately 2 A. The dc supply should be able to support the required current to achieve the above performance. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Test Procedure CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER. THIS AMPLIFIER IS AN ESD SENSITIVE DEVICE. The following procedure must be followed to properly test the amplifier: Step 1 Slowly apply Gate Voltage (typical Vpinch-off= 1.5V) to terminal VG. Step 2 Slowly apply Drain Voltage at VD (<+5 volts) and monitor drain current Ids. Adjust negative voltage VG to set the drain current (Ids) to approximately 1.2 A. Adjust the drain voltage VD to nominal +8 volts (adjust Gate Voltage VG, if needed, to maintain the drain current at Ids. Step 3 After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 4 Follow Turn-off sequence: (i) RF input power=off, (ii) VD=off, (iii) VG=off. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810