RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Description Features The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity.The device uses Raytheon’s Pseudomorphic High Electron Mobility Transistor (pHEMT) process. Positive supply voltage of 3.5V, nominal Power Added Efficiency of 56%, typical, at power out of 31.5 dBm Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm Small outline metal based quad plastic package Absolute Maximum Ratings Electrical Characteristics (Specifications at o 25 C operating free air temperature unless otherwise stated) Parameter Symbol Value Units Positive DC Voltage Negative DC Voltage Simultaneous (Vd-Vg) RF Input Power (from 50-Ohm source) Operating Case Temperature (Case) Storage Temperature Range Thermal Resistance Vd1,Vd2 Vg1,Vg2 Vdg PIN TC TStg RTj-c +9 -6 +12 +10 -30 to 110 -35 to 110 15 Volts Volts Volts dBm °C °C °C/W Parameter Min Typ Max Frequency Range 824 849 Gain (Small Signal) 30 Gain Variation vs Temp -0.02 Gain Linearity (0 dBm ≤ Pout ≤ 28.5 dBm) -1.5 +0.0 Noise Power (869-894 MHz) -140 Input VSWR (50Ω) 2.0:1 -70 Stability (All spurious) 1 Harmonics (Po ≤ 31.5 dBm) -35 Power Out Vdd=3.5V, Pin=7 dBm 32.5 Unit Parameter MHz dB dB/°C Efficiency Pin = 7 dBm, Vdd= 3.5V Po = 31.5 dBm, Vdd = 3.5V Po = 28.5 dBm , Vdd= 3.5V Po = 10 dBm , Vdd= 3.5V ACPR 2 (Offset ≥ ± 900 kHz) (Offset ≥ ± 1.98 MHz) Noise Figure (over temp) Vdd Vg1, Vg2 (<4 mA)3 Case Operating Temp dB dBm/Hz --dBc dBc dBm Min Typ Max 62 56 40 1.5 48 63 % % % % dBc dBc 4.5 dB Volts -0.25 Volts +85 °C 3.5 -1.75 -40 Unit Notes: 1. Source/Load VSWR (All Angles) ≤ 3:1 In-Band, Load VSWR (All Angles) ≥ 20:1 Out of Band, Valid over Case Operating Temperature Range. 2. Po ≤ 28.5 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within a 1.23 MHz channel and within a 30 kHz bandwidth at the specified offset. 3. Vg1 adjusted for Idq (stage 1) = 35 mA, Vg2 adjusted for Idq (stage 2) = 155 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. The following describes a procedure for evaluating the Raytheon RMPA0913C-58, a monolithic high efficiency power amplifier, in a surface mount package, designed for use in the AMPS/CDMA dual mode portable phones. Figure 1 shows the package outline and pin designations. Figure 2 shows the functional block diagram of the packaged product. It should be noted that the amplifier requires external passive components for DC bias and RF input and output matching circuits. A recommended schematic is shown in figure 3. The gate biases for the two stages of the amplifier are set by simple on-chip circuits. Figure 4 shows a typical layout of an evaluation board (RMPA0913C-58-TB), corresponding to the schematic circuit of figure 3. The following should be noted: (1) Pin designations and their functions are as shown in figure 1 and Table 1. (2) Vg1, Vg2 are denoted as the Gate Voltages (negative) applied at the pins of the package (3) Vgg1, Vgg2 are denoted as the negative supply voltages at the evaluation board terminals (4) Vd1, Vd2 are denoted as the Drain Voltages (positive) applied at the pins of the package (5) Vdd1, Vdd2 are denoted as the positive supply voltages at the evaluation board terminals Note: The two drain voltages are tied to the same terminal denoted as Vdd on the evaluation board Figure 1 Package Information Dimensions in inches TOP VIEW BOTTOM VIEW 0.200 SQ. 6 54 45 6 Pin # A 7 0.030 3 RAY 8 RMBA 0913C-58 9 3 2 0.015 1 8 13 2 1 9 12 12 10 7 11 0.041 10 11 PLASTIC LID 0.069 MAX. 0.010 0.230 0.246 0.282 Figure 2 Functional Block Diagram of Packaged Product Vd1 Pin# 10 SIDE SECTION Ground Pin# 5, 7, 9, 13 1 2 3 4 5 6 7 8 9 10 11 12 13 Description RF Out & Vd2 RF Out & Vd2 RF Out & Vd2 AC Ground (g2) GND AC Ground (g1) GND RF Input GND Vd1 Vg2 Vg1 GND (METAL BASE) AC Ground (g2) Pin# 4 RF IN Pin# 8 RF OUT & Vd2 Pin# 1, 2, 3 AC Ground (g1) Vg1 Pin# 6 Pin# 12 Vg2 Pin# 11 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Test Procedure for the evaluation board (RMPA0913C-58) CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1,VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Slowly apply gate supply voltages of -3.0 V to the board terminals Vgg1, Vgg2 to pinch-off the two stages. Step 3: Slowly apply drain supply voltage of +3.5 V to the board terminals Vdd. Step 4: Adjust the gate supply voltages Vgg1, Vgg2 to the values shown on the data summary supplied with the sample. (First adjust Vgg2 to set Idq2. Then adjust Vgg1 to set Iddq=Idq1+Idq2. These gate voltages need not be changed. However, Vgg1,Vgg2 may be adjusted only when different quiescent bias currents are desired for performance trade-off evaluation). Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Adjust RF input signal power level as required. Step 6: Follow turn-off sequence of: (i) Turn off RF Input Power (ii) Turn down and off drain voltage Vdd. (iii) Turn down and off gate voltages Vgg1, Vgg2. Figure 3 Schematic for a Typical Test Evaluation Board Evaluation Board Schematic Ver.6, 4/28/98 Board Type: Multi Layer FR4 Signal to Ground Separation: 0.016” Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Figure 4 Layout and Assembly of Test Evaluation Board Parts List for Test Evaluation Board Part Value EIA Size Vendor(s) C1,C3,C10 47 pF 0402 Murata, GRM36COG470J050 C2 5.6 pF 0402 Murata, GRM36COG5R6B050 C8 6.2 pF 0402 Murata, GRM36COG6R2B050 C9 6.8 pF 0402 Murata, GRM36COG6R8B050 C4,C5,C11,C12 1000 pF 0402 Murata, GRM36X7R102K050 C6,C7 1.5 uF 3528 Kemet (T494B155K020AS) L1 5.6 nH 0603 Toko, LL1608-FH5N6S L2 22 nH 0603 Toko, LL608-FH22NK L3 39 nH 1008 Coilcraft, 1008HS-390TKBC R1 10 Ohm 0402 IMS, RCI-0402-10R0J W1 26AWG (0.015” dia) Wire Alpha, 2853/1 U1 RMPA0913C-58, 3.5V PA Raytheon, G654257 P3 Right angle Pin Header 3M (2340-5211TN) P1,P2 SMA Connectors Board FR4 Johnson Components (142-0701-841) Raytheon Dwg# G654626, V1 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier PRODUCT INFORMATION Table 1 Further Important Application Information Pin# Function Application hints 1 RF OUT AND VD2 An optimal output match for dual mode applications is set by connecting capacitors C8 and C9 to the package pin using approximately 0.233 inches of a 50 ohm transmission line. These capacitors should be located adjacent to each other and separated by 0.010 inches. Lower efficiency will result if a single capacitor of equivalent value were substituted. Fine adjust the capacitors location to obtain a uniform saturated output power response versus frequency using a single tone RF input. Saturated output power is typically measured at +7dBm input power and should be 32.3 to 32.5dBm with a 3.5 volt supply. This condition will yield typically 50dBc ACPR1 and 60dBc ACPR2 at 28.5dBm output power and a 3.5 volt supply using a CDMA waveform. If a greater than 50 ohm impedance transmission line is used to conserve space, transition the line to 50 ohms slightly prior to the optimum tuning point to avoid undesirable effects from the otherwise residual inductance following the tuning elements. Once the optimum tuning point has been established this remains fixed for all other amplifiers. For the dc bias injection circuit choose an inductor with a maximum series resistance rating of less than 0.15 ohms for best efficiency and overall performance versus supply voltage. The two 1.5uF tantalum bypass capacitors chosen for this circuit are low ESR type capacitors with a maximum rating of 1.5 ohms. The capacitor ESR is critical for achieving the best ACPR possible from the amplifier. Other capacitors may be substituted, although larger values may be necessary to achieve equivalent performance. These components should be placed at the tie point for VD1 and VD2 and as close to the amplifier as possible. Finally, connect pins 1-3 using one solid metal pad as opposed to three individual pads for each pin. 2 RF OUT AND VD2 Same as pin 1. 3 RF OUT AND VD2 Same as pin 1. 4 G2 AC GND Place component C12 ≤ 0.080 inches from the package pin. 5 GND Connect pin immediately to the package base solder pad. 6 G1 AC GND Place components R1 and C11 ≤ 0.080 inches from the package pin. 7 GND Same as pin 5. 8 RF IN The amplifier input is optimally matched to 50 ohms by locating capacitor C2 at a distance of 0.138 inches from the package pin. If it is not possible to obtain this separation, adjust the value of inductor L1 to compensate and obtain the desired match. 9 GND Same as pin 5. 10 VD1 Place component C3 ≤ 0.080 inches from the package pin. The dc resistance of inductor L2 should be ≤ 0.5 ohms to obtain optimum amplifier performance. Also, connect VD1 and VD2 at the board component surface and route VG1 and VG2 bias lines to other conductor layers to minimize any additional ohmic losses on the drain supply line. 11 VG2 Connect to a low impedance negative voltage power supply for stage 2 current control. From pinchoff, adjust VG2 voltage to achieve 155mA of stage 2 current, ID2. This current is optimum for high power CDMA operation up to 28.5dBm output power. For improved performance, adjust to lower current for low power CDMA and analog modes of operation. Since both stage 1 and stage 2 drains contribute to the total amplifier current the first stage must be pinched off while adjusting VG2 for a specific ID2 current. A pinchoff condition is achieved by applying -2.0 to -5.0 volts to the gate pins, VG1 and VG2. 12 VG1 Connect to a low impedance negative voltage power supply for stage 1 current control, ID1. From pinchoff, adjust VG1 voltage to achieve 35mA of stage 1 current. 13 PACKAGE BASE AND GND The solder pad for this package should be 0.210 inches square. Fill the pad with several plated-thru vias connecting the pad surface to the RF input and output ground planes. Insufficient grounding of the package base may cause the amplifier to oscillate or result in poor amplifier performance. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected] TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected] Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten [email protected] Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward [email protected] Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala [email protected] Sangus AB Berghamnvagen 68 Box 5004 S–165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954 Globes Elektronik & Co. 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Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com Europe United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 [email protected] Sales Office Headquarters Customer Support www.raytheon.com/micro United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com 978-684-8900 fax: 978-684-5452 [email protected] Characteristic performance data and specifications are subject to change without notice. Revised March 30, 2000 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810