RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWL38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. 4 mil substrate Noise figure 2.7 dB (typ.) Small-signal gain 22 dB (typ.) 1dB compressed Pout 13.5 dBm (typ.) Chip size 2.9 mm x 1.25 mm Absolute Maximum Ratings Parameter Positive DC voltage (+4 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Electrical Characteristics (At 25°C), 50 Ω system, Vd=+4 V, Quiescent Current Idq=50 mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Noise Figure Gain Small Signal at Pin=-20 dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Min 37 Typ -0.5 2.7 Max 40 4.0 Unit GHz V dB 22 dB 1.5 21 dB dB 13.5 dBm Symbol Value Unit Vd Vg Vdg ID PIN TC Tstg RJC +6 -2 8 75 +6 -30 to +85 -55 to +125 169 Volts Volts Volts mA dBm °C °C °C/W Parameter Power Output Saturated Drain Current at Pin=-20 dBm Drain Current at 1dB Compression Input Return Loss (Pin=-15 dBm) Output Return Loss (Pin=-15 dBm) OIP3 Min Typ 15 Max Unit dBm 50 mA 55 mA 12 dB 13 23 dB dBm Note: 1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. Drain Supply Vd1 Figure 1 Functional Block Diagram Drain Supply Vd2 Drain Supply Vd3 Drain Supply Vd4 MMIC Chip RF IN RF OUT Ground (Back of Chip) Figure 2 Chip Layout and Bond Pad Locations Gate Supply Vg1 Gate Supply Vg2 Dimensions in mm 0.0 Chip Size is 2.9 mm x 1.25 mm x 100 µm. Back of chip is RF and DC ground 0.293 1.476 1.7375 2.013 2.9 1.25 1.25 0.774 0.775 0.6245 0.6255 0.475 0.476 0.0 0.0 0.0 0.645 0.895 1.895 2.645 2.9 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Figure 3 Recommended Application Schematic Circuit Diagram Drain Supply Vd=+4 V 10,000pF L 100pF L 100pF L L L = Bond Wire Inductance L 10,000pF L 100pF L L L MMIC Chip RF IN RF OUT L 100pF L 100pF Ground (Back of Chip) L L Gate Supply Vg Vdd (Positive) Figure 4 Recommended Assembly Diagram 10,000pF 100pF 100pF 10,000pF 100pF 5mil Thick Alumina 50-Ohm Die-Attach 80Au/20Sn 5 mil Thick Alumina 50-Ohm RF Output RF Input 100pF 100pF 2 mil Gap Vg (Negative) L< 0.015” (4 Places) Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VDS) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Step 3: Slowly apply positive drain bias supply voltage of +4 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq=50 mA. Performance Data RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, Vd=4V, Idq=50mA, Chip Bonded into 50 ohm Test Fixture 30 S21 20 S21 (dB) 10 0 S11 -10 S22 -20 -30 0 10 20 30 40 50 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Performance Data RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, On-Wafer Measurements, Vd=4V, Idq=50mA 4 Noise Figure (dB) 3 2 1 0 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Noise Figure, Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture 4 Noise Figure (dB) 3.5 3 65mA 2.5 50mA 2 35 36 37 38 39 40 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Performance Data RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance, Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture 26 25 65mA Gain (dB) 24 23 50mA 22 21 20 35 36 37 38 39 40 Frequency (GHz) RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Power Performance, On-Wafer Measurements, Vd=4V, Idq=50mA 20 Output Power (dBm) 18 16 3dB compressed 14 1dB compressed 12 10 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected] TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected] Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten [email protected] Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward [email protected] Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala [email protected] Sangus AB Berghamnvagen 68 Box 5004 S–165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954 Globes Elektronik & Co. Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht [email protected] MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg [email protected] Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino [email protected] Asia ITX Corporation 2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su [email protected] Worldwide Distribution Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig [email protected] France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. 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Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com Europe United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 [email protected] Sales Office Headquarters Customer Support www.raytheon.com/micro United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com 978-684-8900 fax: 978-684-5452 [email protected] Characteristic performance data and specifications are subject to change without notice. Revised March 14 2001 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810