RAYTHEON RMPA1951-102

RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Description
Features
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process.
K
K
K
K
K
Advanced DC power-management extends average phone-battery life!
Single positive-supply operation and power-down mode.
35% power-added efficiency at +29 dBm CDMA average output power.
Compact LCC package: 6.0 x 6.0 x 1.5 mm3.
50 ohm matched and DC blocked input/output.
Absolute
Maximum
Ratings1
Electrical
Characteristics3
ADVANCED INFORMATION
Parameter
Symbol
Supply Voltage
Reference Voltage
RF Input Power2
Load VSWR
Case Operating Temperature
Storage Temperature
Parameter
Operating Frequency
Gain
(Po=0 dBm)
(Po=28 dBm)
Linear Output Power
Power-Added Efficiency
(Po=16 dBm)
(Po=28 dBm)
(Po=29 dBm)
ACPR (Offset ≥ 1.25 MHz)4
Noise Figure
Noise Power (Po ≤ 29 dBm)
Input VSWR (50Ω)
Output VSWR (50Ω)
Min
Typ
1850
Vcc
Vref
Pin
VSWR
Tc
Tstg
Max
1910
20
25
29
24
27
5
28
31
6.5
32
35
-49
5
2.0:1
3.5:1
Unit
MHz
dB
dB
dBm
%
%
%
-46
dBc
6
dB
-135 dBm/Hz
2.5:1
Min
1.5
-40
-55
Typical
Max
Units
3.5
2.7
+1
1.2:1
+25
+25
6
4.0
+7
10:1
+110
+150
V
V
dBm
Parameter
Min
°C
°C
Typ
5
Stability (All spurious)
Harmonics (Po ≤ 29 dBm)
2fo, 3fo, 4fo
Quiescent Current
(Vref=2.7V)
(Vref=2.0V)
(Vref=1.7V)
Power Shutdown Current6
Vcc
Vref
Iref
Case Operating
Temperature
3.0
1.7
-30
80
50
35
2
3.5
2.7
13
Max
Unit
-70
dBc
-30
dBc
100
mA
mA
mA
uA
V
V
mA
10
4.5
3.2
+85
°C
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. Typical RF input power for CDMA Pout = +28 dBm.
3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR ≤ 1.2:1.
4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a
1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.
5. Load VSWR ≤ 6:1, all phase angles.
6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 1
Package Outline and
Pin Designations
ADVANCED INFORMATION
Dimensions in inches (mm)
Pin #
1
2
3
4
5
6
7
Description
Vcc
RF In
VREF
N/C
RF Out
GND
GND
(2.54)
(2.46)
(5.08)
(4.82)
Figure 2
Functional Block
Diagram of
Packaged Product
(Topside View)
VCC
(1)
PA Module
GND
(6)
Collector
Bias
VCC=3.5V (nom)
VREF=2.7V (nom)
1850-1910 MHz
50 Ohms I/O
Interstage
Match
RF IN
(2)
Input
Matching
Network
Input
Stage
MMIC
Input Stage
Bias
VREF
(3)
Output
Stage
Output
Matching
Network
RF OUT
(5)
Output Stage
Bias
Reference
Adjust
GND (Pin 7)(Package Base)
N/C
(4)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Evaluation Board
Instructions
ADVANCED INFORMATION
With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Blue wire is collector DC voltage input (pin 1). VCC= +3.5V nominal.
Brown wire is reference DC voltage input (pin 3). Vref=+ 2.7V nominal to obtain Iccq= 80mA. Operation at lower
or higher quiescent currents can be achieved by decreasing or increasing Vref voltage relative to +2.7V.
First apply +3.5V to the collector supply (blue wire). Next apply +2.7V to the reference supply to brown wire.
Quiescent collector current with no RF applied will be about 80 mA. Reference supply current with or without RF
applied will be about 13 mA. When turning amplifier off, reverse power supply sequence.
Apply -20dBm RF input power at PCS frequency (1850 -1910MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +6dBm for large signal,
single-tone or digital CDMA measurements. Do not exceed +6dBm input power.
Figure 3
Evaluation Board
Layout and Schematic
PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
Metallization: 1/2 OZ Copper
Cladding
GND
Vcc: +3.5V
Icc: ≅ 80mA
BLUE WIRE
G656524
V1
VCC
Raytheon
RMPA1951 - 102
PPYYWWXX
(ALT)PPYYWWZZZ
RF IN
VREF
Vref: +2.7V
Ibb: ≅ 13 ma
BROWN WIRE
RF OUT
RF OUT
RF IN
N/C
GND
C1 *
2.2 uF
VCC
SMA1
RF IN
50 ohm TRL
VREF
GND
6
1
2
Raytheon
5
3
RMPA1951
PPYYWWZZZ
4
7
50 ohm TRL
SMA2
RF OUT
N/C
(package base)
* Minimum VCC bypass capacitance recommended for best RF performance.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Application
Information
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
K Precautions to Avoid Permanent Device Damage:
– Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to ensure no contamination or damage to RF, DC &
ground contact areas.
– Device Cleaning: Standard board cleaning techniques should not present device problems provided that the
boards are properly dried to remove solvents or water residues.
– Static Sensitivity: Follow ESD precautions to protect against ESD damage:
• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices.
– General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair
of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply
excessive pressure to the top of the lid.
– Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions. Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
K Device Usage: Raytheon recommends the following procedures prior to assembly.
– Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking
temperature.
– Assemble the dry-baked devices within 7 days of removal from the oven.
– During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity
and a maximum temperature of 30°C
– If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must
be repeated.
K Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand
soldering is not recommended.
– Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to
prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board
and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at
150°C.
• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid
cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below
indicates the recommended soldering profile.
K Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the
heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness.
K Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat
gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than
5 seconds. No more than 2 rework operations should be performed.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 4
Recommended Solder
Reflow Profile
240
ADVANCED INFORMATION
10 S ec
220
200
183 o C
180
Deg C
160
140
o
100
45 S ec
(M ax)
above
183 o C
S oak at
150 o C for
60 S ec
120
1 C /S ec
80
1 o C /S ec
60
40
20
0
0
60
120
180
240
300
T im e (Sec)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Performance
Data
ADVANCED INFORMATION
Single-Tone Output Power, Gain and
Power-Added Efficiency
Figure 5
Pow er (dBm ), Gain (dB), Efficiency (%)
45.0
Output Power
40.0
Power Gain
35.0
Power-Added
Efficiency
30.0
25.0
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Tc=+25°C
20.0
15.0
10.0
5.0
0.0
-15.0
-12.5
-10.0
-7.5
-5.0
-2.5
0.0
2.5
5.0
7.5
Input P o we r (dB m)
Figure 6
CMDA Gain vs Output Power
30.00
Tc= +25 deg C
Tc= -30 deg C
27.50
Tc= +85 deg C
Gain (dB)
25.00
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Pout < 29 dBm
22.50
20.00
17.50
15.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 7
ACPR vs Frequency (3 Devices)
-47.50
ACPR1_28_1
ACPR1_28_2
ACPR1_28_3
-48.00
ACPR1 (dBc)
-48.50
Tested at:
KVcc=3.5V
KVref=2.7V
KPout=+28 dBm
KOffset= ±1.25 MHz
KTc=+25°C
-49.00
-49.50
-50.00
-50.50
-51.00
-51.50
1840
1850
1860
1870
1880
1890
1900
1910
1920
Frequency (MHz)
Figure 8
ACPR vs Output Power and Temperature
-40.00
Tc=+25 deg C
Tc=-30 deg C
Tc=+85 deg C
-45.00
ACPR1 (dBc)
-50.00
Tested at:
K Vcc=3.5V
K Vref=2.7V
K f=1880 MHz
K Offset= ±1.25 MHz
K Pout < 28 dBm
-55.00
-60.00
-65.00
-70.00
-75.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 7
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 9
ADVANCED INFORMATION
PAE vs Output Power and Temperature
40.00
Tc= +25 deg C
Tc=-30 deg C
Tc=+85 deg C
35.00
Efficiency (%)
30.00
Tested at:
K Vcc=3.5V
K Vref=2.7V
K F=1880 MHz
25.00
20.00
15.00
10.00
5.00
0.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Figure 10
DC Collector Current vs Output Power and Reference Voltage
700
Pout=+4 dBm
Pout=+16 dBm
Pout=+24 dBm
Pout=+28 dBm
Pout=+29 dBm
Collector Current, Icc (mA)
600
500
400
Tested at:
K Vcc=3.5V
K Vref=2.65 –3.05V
K F=1880 MHz
K Tc = +25°C
300
200
100
0
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
Reference Voltage, Vref (V)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 8
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
DC Power
Management
for Reduced-Power
Operating Modes
ADVANCED INFORMATION
Many Cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter
performance while operating at backed-off output power levels. Oftentimes, cellular systems will operate at 10-20
dB back-off from maximum-rated linear power and peak power-added efficiency. The ability to reduce current
consumption under these conditions, without sacrificing linearity, is critical to extending battery life in nextgeneration handheld phones.
The RMPA1951-102 PA offers the ability to lower quiescent current by more than 60 percent and small-signal gain
by up to 10 dB using a single control voltage (Vref). Even with the amplifier biased for lowest current consumption,
high linearity is maintained over the full operating temperature range and at output power levels up to +16 dBm.
Bias and gain control through Vref provides complete flexibility for the handset designer, allowing the user to define
the operation by either an analog (continuously-variable) or digital (discrete-step) voltage input. As an example,
reducing the Vref voltage from 2.7V (nominal) to 1.7V (minimum) can lower PA current consumption by more than
20 percent at an output power of +16 dBm.
The following charts demonstrate analog and digital control techniques for minimizing DC power consumption at
reduced RF output power levels. Figures 11 through 19 characterize analog control over a reference voltage (Vref)
range of 1.7V to 2.7V. Quiescent current is reduced to less than 30 mA and small-signal gain is reduced by 10 dB at
Vref=1.7V. Operating current at +16 dBm is also reduced by 20 percent, or 35 mA, at the lowest reference voltage.
Figures 20 through 23 feature digital control using three discrete voltage levels (2.7V, 2.0V, 1.7V) to optimize linear
PA performance over three output power ranges (< +4 dBm, +4 dBm to +16 dBm, >+16 dBm). Alternate output
power ranges can be selected depending on the power-probability use in the cellular system.
DC Power
Management
Application of Digital
Control Technique
Parameter
Symbol
Min
Low-Power Range
Current
Gain
Linearity
P04
Icc4
G4
ACPR4
Mid-Power Range
Current
Gain
Linearity
P16
Icc16
G16
ACPR16
+4
High-Power Range
Current
Gain
Linearity
P28
Icc28
G28
ACPR28
+16
Typical
Max
Units
Conditions
+4
55
dBm
mA
dB
dBc
Vref=1.7V typ
+16
160
dBm
mA
dB
dBc
Vref=2.0V typ
+28
640
dBm
mA
dB
dBc
Vref=2.7V typ
Pout=+28 dBm
12.5
-50
+10
20
-50
560
26
-50
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 9
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 11
Enhanced PAE vs Reference Voltage at Pout=+16 dBm (Analog Control)
9.0
PAE (+16 dBm)
8.0
7.5
7.0
6.5
6.0
Power-Added Efficiency (%)
8.5
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
5.5
5.0
2.7
Figure 12
2.6
2.5
2.4
2.3
2.2
Vref (V)
2.1
2.0
1.9
1.8
1.7
Total Quiescent Current vs Reference Voltage (Analog Control)
100.0
90.0
Iccq+Iref
80.0
Tested at:
K Vcc=3.5V
K Tc = +25°C
60.0
50.0
40.0
DC Current (mA)
70.0
30.0
20.0
10.0
0.0
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Vref (V)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 10
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 13
Small-Signal Gain (Pout=0 dBm) vs Reference Voltage (Analog Control)
27.5
SS gain
22.5
20.0
17.5
15.0
Small-Signal Gain (dB)
25.0
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
12.5
10.0
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Vref (V)
Figure 14
Icc+Iref (mA)
Total Current (ICC + Iref) vs Output Power and Reference Voltage
(Analog Control)
185.0
175.0
165.0
155.0
145.0
135.0
125.0
115.0
105.0
95.0
85.0
75.0
65.0
55.0
45.0
35.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Vref=2.7V
Tested at:
KVcc=3.5V
KF=1880 MHz
KTc = +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 11
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
ADVANCED INFORMATION
Figure 15
Gain at +25°C vs Output Power and Reference Voltage
(Analog Control)
27.5
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
Vref=2.7V
25.0
Gain (dB)
22.5
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
20.0
17.5
15.0
12.5
10.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 16
Low-Power Mode
Gain vs Output Power and Temperature (Analog Control)
22.5
Vref=2.0V (Tc=+25 deg C)
Vref=2.0V Tc=+85 deg C)
20.0
Vref=1.7V (Tc=+25 deg C)
G ain (dB)
Vref=1.7V (Tc=+85 deg C)
17.5
Tested at:
K Vcc=3.5V
K F=1880 MHz
15.0
12.5
10.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 12
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 17
ADVANCED INFORMATION
Low-Power Mode - ACPR at +25°C vs Output Power and Vref
(Analog Control)
-45.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
ACPR1 at +/-1.25 MHz Offset (dBc)
-46.0
-47.0
-48.0
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 18
Low-Power Mode - ACPR vs Output Power and Vref at 85°C
(Analog Control)
-45.0
Vref=2.0V
Vref=1.9V
Vref=1.8V
Vref=1.7V
ACPR1 at +/-1.25 MHz Offset (dBc)
-46.0
-47.0
-48.0
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +85°C
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 13
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 19
ADVANCED INFORMATION
Low-Power Mode - ACPR vs Output Power and Temperature
(Analog Control)
-45.0
Tc=+25 deg C
Tc=+85 deg C
ACPR1 at +/- 1.25 MHz Offset (dBc)
-46.0
-47.0
Tested at:
K Vcc=3.5V
K Vref=2.0V
K F=1880 MHz
-48.0
-49.0
-50.0
Vref=2.0V
-51.0
-52.0
-53.0
-54.0
-55.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Output Power (dBm)
Figure 20
Collector Current vs Output Power at +25°C (Digital Control)
600
500
Collector Current (mA)
450
400
350
(Low-Power)
Vref=2.7V
Adj Vref
550
(Mid-Power)
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
(High-Power)
Vref=2.7V
300
250
200
Vref=2.7V
150
100
Vref=2.0V
50
0
-20.0 -16.0 -12.0
Vref=1.7V
-8.0
-4.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 14
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 21
ADVANCED INFORMATION
Collector Current vs Output Power (Pout ≤+16 dBm) at +25°C (Digital Control)
180
Vref=2.7V
Collector Current (mA)
160
(Low-Power)
(Mid-Power)
Adj Vref
140
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
120
100
Vref=2.7V
80
Vref=2.0V
Vref=2.7V
60
Vref=1.7V
40
20
0
-20.0
-16.0
-12.0
-8.0
-4.0
0.0
4.0
8.0
12.0
16.0
Output Power (dBm)
Figure 22
Gain vs Output Power (Pout ≤+28 dBm) at +25°C (Digital Control)
30.0
27.5
25.0
(Low-Power)
Vref=2.7V
Adj Vref
(Mid-Power)
(High-Power)
Vref=2.7V
22.5
Vref=2.7V
Gain (dB)
20.0
Vref=2.0V
17.5
15.0
12.5
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
Vref=1.7V
10.0
7.5
5.0
2.5
0.0
-20.0
-16.0
-12.0
-8.0
-4.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
Output Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 15
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
Figure 23
ADVANCED INFORMATION
ACPR vs Output Power
(Pout ≤+28 dBm) at +25°C (Digital Control)
-45.00
(Low-Power)
ACPR1 at +/-1.25 MHz Offset (dBc)
-47.50
(Mid-Power)
(High-Power)
Vref=2.7V
Adj Vref
-50.00
-52.50
Vref=1.7V
Vref=2.0V
-55.00
Vref=2.7V
-57.50
-60.00
-62.50
-65.00
Tested at:
K Vcc=3.5V
K F=1880 MHz
K Tc = +25°C
Vref=2.7V
-67.50
-70.00
-72.50
-75.00
-20.0 -16.0 -12.0 -8.0
-4.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
Output Power (dBm)
Figure 24
Noise Figure vs Frequency (3 Devices)
7.00
Unit 1_2.7V
Unit 2_2.7V
Unit 3_2.7V
6.50
Noise Figure (dB)
6.00
5.50
Tested at:
K Vcc=3.5V
K Vref = 2.7
K Tc = +25°C
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1830
1850
1870
1890
1910
1930
1950
1970
1990
2010
Frequency (MHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised August 27, 2001
Page 16
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Worldwide Sales
Representatives
ADVANCED INFORMATION
Spartech South
2115 Palm Bay Road, NE,
Suite 4
Palm Bay, FL 32904
321-727-8045
fax: 321-727-8086
Jim Morris
[email protected]
TEQ Sales, Inc.
920 Davis Road, Suite 304
Elgin, IL 60123
847-742-3767
fax: 847-742-3947
Dennis Culpepper
[email protected]
Cantec Representatives
8 Strathearn Ave, No. 18
Brampton, Ontario
Canada L6T 4L9
905-791-5922
fax: 905-791-7940
Dave Batten
[email protected]
Steward Technology
6990 Village Pkwy #206
Dublin, CA 94568
925-833-7978
fax: 925-560-6522
John Steward
[email protected]
Sangus OY
Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
[email protected]
Sangus AB
Berghamnvagen 68
Box 5004
S–165 10 Hasselby
Sweden
Ronny Gustafson
468-0-380210
fax: 468-0-3720954
Globes Elektronik & Co.
Klarastrabe 12
74072 Heilbronn
Germany
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
[email protected]
MTI Engineering Ltd.
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
[email protected]
Sirces srl
Via C. Boncompagni, 3B
20139 Milano
Italy
3902-57404785
fax: 3902-57409243
Nicola Iacovino
[email protected]
Asia
ITX Corporation
2–5, Kasumigaseki
3–Chome
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
[email protected]
itx–corp.co.jp
Sea Union
9F-1, Building A, No 19-3
San-Chung Road
Nankang Software Park
Taiwan, ROC
Taipei 115
02-2655-3989
fax: 02-2655-3918
Murphy Su
[email protected]
Worldwide
Distribution
Headquarters
6321 San Ignacio Drive
San Jose, CA 95119
408-360-4073
fax: 408-281-8802
Art Herbig
[email protected]
France
4 Allee du Cantal
Evry, Cedex
France
33 16079 5900
fax: 33 16079 8903
[email protected]
bfioptilas.avnet.com
Holland
Chr. Huygensweg 17
2400 AJ ALPHEN AAN DEN
RIJN
The Netherlands
31 172 446060
fax: 33 172 443414
[email protected]
bfioptilas.avnet.com
Spain
C/Isobel Colbrand, 6 – 4a
28050 Madrid
Spain
34 913588611
fax: 34 913589271
[email protected]
bfioptilas.avnet.com
Asia
Raytheon
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
[email protected]
rrfc.raytheon.com
North
America
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
[email protected]
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
[email protected]–peak.com
Europe
United Kingdom
Burnt Ash Road
Aylesford, Kent
England
ME207XB
44 1622882467
fax: 44 1622882469
Belgium and Luxembourg [email protected]
bfioptilas.avnet.com
Cipalstraat
2440 GEEL
Belgium
32 14 570670
fax: 32 14 570679
[email protected]
Sales Office
Headquarters
Customer
Support
www.raytheon.com/micro
United States
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
[email protected]
rrfc.raytheon.com
United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
[email protected]
rrfc.raytheon.com
Europe
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
[email protected]
raytheon.com
978-684-8900
fax: 978-684-5452
[email protected]
Characteristic performance data and specifications are subject to change without notice.
Revised August 27, 2001
Page 17
Raytheon RF Components
362 Lowell Street
Andover, MA 01810