RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of applications, such as a driver amplifier or a frequency multiplier. 4 mil substrate Small-signal gain 22 dB (typ.) Pout 1 dB comp 23 dBm (typ.) Chip size 4.67 mm x 2.00 mm Absolute Maximum Ratings Parameter Symbol Value Units Vd Vg Vdg ID PIN TC Tstg RJC +6 -2 +8 442 +15 -30 to +85 -55 to +125 53 Volts Volts Volts mA dBm °C °C °C/W Positive DC voltage (+5 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Electrical Characteristics (At 25°C), 50 Ω system, Vd = +5 V, Quiescent Current Idq = 400 mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -5 dBm Gain Variation vs Frequency Gain at 1dB Compression Power Output at 1 dB Compression Min Typ 18 20 Max Unit Parameter 40 Power Output Saturated: Pin = +3 dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -5 dBm) Output Return Loss (Pin = -5 dBm) -0.2 GHz V 22 dB +/-2.5 21 dB dB 23 Min Typ Max Unit 21 24 dBm 15 % 8 dB 10 dB dBm Notes: 1. Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. Recommended Procedure CAUTION: THIS IS AN ESD SENSITIVE DEVICE. CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate Step 2: Connect the DC supply grounds to the grounds frequency band. of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 6: Follow turn-off sequence of: Step 3: Slowly apply positive drain bias supply voltage (i) Turn off RF input power, of +5 V to Vd. (ii) Turn down and off drain voltage (Vd), Step 4: Adjust gate bias voltage to set the quiescent (iii) Turn down and off gate bias voltage (Vg). current of Idq = 400 mA. for Biasing and Operation Figure 1 Functional Block Diagram Drain Supply Drain Supply Vd1 Vd2 Drain Supply Vd3 Drain Supply Vd4 MMIC Chip RF IN RF OUT Ground Back of Chip Gate Supply Vg1 Gate Supply Vg2 Gate Supply Vg3 Gate Supply Vg4 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Figure 2 Chip Layout and Bond Pad Locations Dimensions in mm 1.50 2.44 3.16 4.15 4.57 2.00 Chip Size is 4.67 mm x 2.0 mm x 100 µm. Back of chip is RF and DC ground 1.06 0.83 0.60 0.0 2.35 1.23 0.0 3.22 3.84 4.67 0.11 Figure 3 Recommended Application Schematic Circuit Diagram Drain Supply Vd = +5 V L 10,000pF 100pF L = Bond Wire Inductance L L L 10,000pF L L 100pF 100pF L L 100pF L L MMIC Chip RF OUT RF IN Ground (Back of Chip) L L 100pF 100pF L 10,000pF L L L L 100pF 100pF L L L 10,000pF Gate Supply Vg Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Figure 4 Recommended Assembly Diagram Vd (Positive) 10,000pF 10,000pF Die-Attach 80Au/20Sn 100pF 100pF 100pF 100pF 5mil Thick Alumina 50-Ohm 5 mil Thick Alumina 50-Ohm RF Input RF Output 100pF 100pF 100pF 100pF 2 mil Gap 10,000pF Vg (Negative) 10,000pF L< 0.015” (4 Places) Note Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. If output power level detection is not desired, do not make connection to detector bond pad. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Performance Data Pout vs. Pin Vd = 5V, Id = 400mA 27 Pout (dBm) 25 23 18 GHz 21 29 GHz 19 40 GHz 17 15 -6 -4 -2 0 2 4 Pin (dBm) Gain vs. Pin Vd = 5V, Id = 400mA 23 22.5 Gain (dB) 22 21.5 18 GHz 21 29 GHz 20.5 40 GHz 20 19.5 19 -6 -4 -2 0 2 4 Pin (dBm) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Performance Data Gain vs. Frequency Power In = -5, 0, +5 dBm Vd = 5V, Id = 400mA 30 Gain (dB) Power Out (dBm) 28 Pin = -5 dBm 26 24 Pin = 0 dBm 22 Pin = +5 dBm 20 18 16 18 20 22 24 26 28 30 32 34 36 38 40 34 36 38 40 Frequency (GHz) S21, S11, S22 Mag vs. Frequency Vd = 5V, Id = 400mA 30 S21, S11, S22 Mag (dB) S21 20 10 0 S11 -10 -20 S22 -30 18 20 22 24 26 28 30 32 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 15, 2001 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 Worldwide Sales Representatives PRODUCT INFORMATION Spartech South 2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected] TEQ Sales, Inc. 920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected] Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten [email protected] Steward Technology 6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward [email protected] Sangus OY Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala [email protected] Sangus AB Berghamnvagen 68 Box 5004 S–165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954 Globes Elektronik & Co. Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht [email protected] MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg [email protected] Sirces srl Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino [email protected] Asia ITX Corporation 2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su [email protected] Worldwide Distribution Headquarters 6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig [email protected] France 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com Holland Chr. 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Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com Europe United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 Belgium and Luxembourg rfsales.uk@ bfioptilas.avnet.com Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 [email protected] Sales Office Headquarters Customer Support www.raytheon.com/micro United States (East Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com United States (West Coast) Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com Europe Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com 978-684-8900 fax: 978-684-5452 [email protected] Characteristic performance data and specifications are subject to change without notice. Revised January 15, 2001 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810