PANJIT PJF13N50

PJP13N50 / PJF13N50
TO-220AB / ITO-220AB
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A
•
•
•
•
•
•
TO-220AB
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB
1
MECHANICAL DATA
2
G
3
D
S
1
2
G
3
D
S
INTERNAL SCHEMATIC DIAGRAM
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
PACKAGE
PACKING
PJP13N50
P13N50
TO-220AB
50PCS/TUBE
PJF13N50
F13N50
ITO-220AB
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
S ymb o l
P J P 1 3 N5 0
P J F 1 3 N5 0
Uni ts
D ra i n-S o urc e Vo lta g e
V DS
500
V
Ga te -S o urc e Vo lta g e
V GS
+3 0
V
C o nti nuo us D ra i n C urre nt
ID
13
13
A
P uls e d D ra i n C urre nt 1 )
ID M
52
52
A
PD
175
1 .4
52
0 .4 2
W
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T A =2 5 O C
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=12.5A, VDD=50V, L=10mH
T J ,T S TG
-5 5 to +1 5 0
E AS
780
O
C
mJ
Junction-to-Case Thermal Resistance
R θJ C
0 .7
2 .4
O
C /W
Junction-to Ambient Thermal Resistance
R θJ A
6 2 .5
100
O
C /W
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Jan 27,2010-REV.00
PAGE . 1
PJP13N50 / PJF13N50
ELECTRICAL CHARACTERISTICS
P a ra me te r
( TA=25OC unless otherwise noted )
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS
V GS =0 V, I D =2 5 0 uA
500
-
-
V
Ga te Thre s ho ld Vo lta g e
V GS (th)
V D S =V GS , I D =2 5 0 uA
2 .0
-
4 .0
V
R D S (o n)
VGS= 10V, I D= 6.5A
-
0.36
0.52
Ω
I DSS
VDS=500V, VGS=0V
-
-
1
uA
I GS S
V GS =+3 0 V, V D S =0 V
-
-
+1 0 0
nΑ
-
5 8 .6
-
-
11 .8
-
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Qg
Ga te -S o urc e C ha rg e
Q gs
Ga te -D ra i n C ha rg e
Q gd
-
18.6
-
Turn-On D e la y Ti me
t d (o n)
-
19.6
32
Turn-On Ri s e Ti me
tr
-
42
85
-
8 0 .4
150
-
52
90
-
2000
2450
-
205
250
-
16
22
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
V D S =4 0 0 V, ID = 1 2 A
V GS =1 0 V
VDD=250V , I D =6A
VGS=10V , RG=25Ω
t d (o ff)
tf
Inp ut C a p a c i ta nc e
C
i ss
Outp ut C a p a c i ta nc e
C
o ss
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C
rs s
V D S =2 5 V, V GS =0 V
f=1 .0 MH Z
nC
ns
pF
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS
-
-
-
13
A
Ma x.P uls e d S o urc e C urre nt
I SM
-
-
-
52
A
D i o d e F o rwa rd Vo lta g e
V SD
IS = 1 3 A , V GS =0 V
-
-
1 .4
V
Re ve rs e Re c o ve ry Ti me
t rr
-
450
-
ns
Re ve rs e Re c o ve ry C ha rg e
Q
V GS =0 V, IF = 1 2 A
d i /d t=1 0 0 A /us
-
5 .0
-
uC
rr
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Jan 27,2010-REV.00
PAGE . 2
PJP13N50 / PJF13N50
24
22
20
18
16
14
12
10
8
6
4
2
0
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
VGS= 20V~
6.0V
VDS=25V
10
5.0V
TJ = 125oC
1
25oC
-55oC
0.1
0
5
10
15
20
25
30
2
3
VDS - Drain-to-Source Voltage (V)
5
6
7
8
Fig.2 Transfer Characteristric
Fig.1 Output Characteristric
0.6
0.8
RDS(ON) - On Resistance(Ω
Ω)
RDS(ON) - On Resistance(Ω
Ω)
4
VGS - Gate-to-Source Voltage (V)
0.5
VGS=10V
0.4
VGS = 20V
0.3
0.2
ID =6.5A
0.7
0.6
0.5
0.4
TJ =25oC
0.3
0.2
0
4
8
12
16
20
2
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
8
10
Fig.4 On Resistance vs Gate to Source Voltage
C - Capacitance (pF)
f = 1MHz
VGS = 0V
3000
2500
Ciss
2000
1500
1000
Coss
500
0
25
25
50
50
75
75
100
150
100 125
125 150
TTJJ--Junction
JunctionTemperature
Temperature(o(oC)
C)
Fig.5 On Resistance vs Junction Temperature
Jan 27,2010-REV.00
6
3500
RDS(ON)
RDS(ON)- -On-Resistance(Normalized)
On-Resistance(Normalized)
2.7
2.7
VGS =10 V
2.5
2.5
ID =6.5A
2.3
2.3
2.1
2.1
1.9
1.9
1.7
1.7
1.5
1.5
1.3
1.3
1.1
1.1
0.9
0.9
0.7
0.7
0.5
0.5
-50
-50 -25
-25 00
4
VGS - Gate-to-Source Voltage (V)
Crss
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3
PJP13N50 / PJF13N50
100
12
ID =12A
10
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
VDS=400V
VDS=250V
8
VDS=100V
6
4
VGS = 0V
10
TJ = 125oC
1
25oC
0.1
2
-55oC
0.01
0
0
10
20
30
40
50
60
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(Normalized)
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
Jan 27,2010-REV.00
PAGE. 4
PJP13N50 / PJF13N50
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
Jan 27,2010-REV.00
PAGE . 5