PJP13N50 / PJF13N50 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives ITO-220AB 1 MECHANICAL DATA 2 G 3 D S 1 2 G 3 D S INTERNAL SCHEMATIC DIAGRAM • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING PACKAGE PACKING PJP13N50 P13N50 TO-220AB 50PCS/TUBE PJF13N50 F13N50 ITO-220AB 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l P J P 1 3 N5 0 P J F 1 3 N5 0 Uni ts D ra i n-S o urc e Vo lta g e V DS 500 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 13 13 A P uls e d D ra i n C urre nt 1 ) ID M 52 52 A PD 175 1 .4 52 0 .4 2 W Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=12.5A, VDD=50V, L=10mH T J ,T S TG -5 5 to +1 5 0 E AS 780 O C mJ Junction-to-Case Thermal Resistance R θJ C 0 .7 2 .4 O C /W Junction-to Ambient Thermal Resistance R θJ A 6 2 .5 100 O C /W Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE Jan 27,2010-REV.00 PAGE . 1 PJP13N50 / PJF13N50 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 500 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 6.5A - 0.36 0.52 Ω I DSS VDS=500V, VGS=0V - - 1 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 5 8 .6 - - 11 .8 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 18.6 - Turn-On D e la y Ti me t d (o n) - 19.6 32 Turn-On Ri s e Ti me tr - 42 85 - 8 0 .4 150 - 52 90 - 2000 2450 - 205 250 - 16 22 Turn-Off D e la y Ti me Turn-Off F a ll Ti me V D S =4 0 0 V, ID = 1 2 A V GS =1 0 V VDD=250V , I D =6A VGS=10V , RG=25Ω t d (o ff) tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 13 A Ma x.P uls e d S o urc e C urre nt I SM - - - 52 A D i o d e F o rwa rd Vo lta g e V SD IS = 1 3 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t rr - 450 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 1 2 A d i /d t=1 0 0 A /us - 5 .0 - uC rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. Jan 27,2010-REV.00 PAGE . 2 PJP13N50 / PJF13N50 24 22 20 18 16 14 12 10 8 6 4 2 0 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VGS= 20V~ 6.0V VDS=25V 10 5.0V TJ = 125oC 1 25oC -55oC 0.1 0 5 10 15 20 25 30 2 3 VDS - Drain-to-Source Voltage (V) 5 6 7 8 Fig.2 Transfer Characteristric Fig.1 Output Characteristric 0.6 0.8 RDS(ON) - On Resistance(Ω Ω) RDS(ON) - On Resistance(Ω Ω) 4 VGS - Gate-to-Source Voltage (V) 0.5 VGS=10V 0.4 VGS = 20V 0.3 0.2 ID =6.5A 0.7 0.6 0.5 0.4 TJ =25oC 0.3 0.2 0 4 8 12 16 20 2 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 8 10 Fig.4 On Resistance vs Gate to Source Voltage C - Capacitance (pF) f = 1MHz VGS = 0V 3000 2500 Ciss 2000 1500 1000 Coss 500 0 25 25 50 50 75 75 100 150 100 125 125 150 TTJJ--Junction JunctionTemperature Temperature(o(oC) C) Fig.5 On Resistance vs Junction Temperature Jan 27,2010-REV.00 6 3500 RDS(ON) RDS(ON)- -On-Resistance(Normalized) On-Resistance(Normalized) 2.7 2.7 VGS =10 V 2.5 2.5 ID =6.5A 2.3 2.3 2.1 2.1 1.9 1.9 1.7 1.7 1.5 1.5 1.3 1.3 1.1 1.1 0.9 0.9 0.7 0.7 0.5 0.5 -50 -50 -25 -25 00 4 VGS - Gate-to-Source Voltage (V) Crss 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJP13N50 / PJF13N50 100 12 ID =12A 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VDS=400V VDS=250V 8 VDS=100V 6 4 VGS = 0V 10 TJ = 125oC 1 25oC 0.1 2 -55oC 0.01 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) Fig. 7 Gate Charge Waveform 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature Jan 27,2010-REV.00 PAGE. 4 PJP13N50 / PJF13N50 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. Jan 27,2010-REV.00 PAGE . 5