OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened to MIL-S-19500, TX, TXV And S Levels DESCRIPTION The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6501ST OM6502ST IC (Cont.) @ 90°C, A 5 10 SCHEMATIC V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 Tf (Typ.) ns 400 400 qJC °C/W 3.8 3.0 MECHANICAL OUTLINE TJ °C 150 150 PACKAGE OPTIONS .200 .190 .420 .410 Collector PD W 35 42 .045 .035 .665 .645 .150 .140 1 2 3 C E G .537 .527 .430 .410 Gate .038 MAX. .750 .500 MOD PAK .005 Emitter .035 .025 .100 TYP. Pin 1: Collector Pin 2: Emitter Pin 3: Gate .120 TYP. 6 PIN SIP Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 139 3.1 PRELIMINARY DATA: OM6502ST IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 500 V(BR)CES Collector Emitter 500 V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Breakdown Voltage ICES VCE = 0 Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 V Breakdown Voltage IC = 250 µA ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V TC = 125°C TC = 125°C IGES Gate Emitter Leakage ±100 nA Current VGE = ±20 V Gate Threshold Voltage VCE(sat) Collector Emitter Gate Emitter Leakage Current VCE = 0 V Parameter - ON 2.0 4.0 3.0 V VCE = VGE, IC = 250 µA VGE(th) V VGE = 15 V, IC = 5 A VCE(sat) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter IGES VCE = 0 V Parameter - ON VGE(th) VCE = 0 IC = 250 µA 3.0 V Saturation Voltage VGE = 15 V, IC = 5 A 2.0 4.0 3.0 V VCE = VGE, IC = 250 µA V VGE = 15 V, IC = 10 A V VGE = 15 V, IC = 10 A Saturation Voltage TC = 25°C 2.8 Gate Threshold Voltage TC = 25°C VCE(sat) Collector Emitter 2.8 3.0 Saturation Voltage TC = 100°C TC = 100°C Dynamic Dynamic gfs Forward Transductance 2.0 S VCE = 20 V, IC = 5 A gfs Forward Transductance S VCE = 20 V, IC = 10 A Cies Input Capacitance 260 pF VGE = 0 Cies Input Capacitance 950 pF VGE = 0 Coes Output Capacitance 50 pF VCE = 25 V Coes Output Capacitance 140 pF VCE = 25 V Cres Reverse Transfer Capacitance 20 pF f = 1 mHz Cres Reverse Transfer Capacitance 80 pF f = 1 mHz nS 2.5 Switching-Resistive Load Switching-Resistive Load Td(on) Turn-On Time 37 nS VCC = 400 V, IC = 5 A Td(on) Turn-On Time 150 tr Rise Time 150 nS VGE = 15 V, Rg = 47 tr Rise Time 1000 nS VCC = 400 V, IC = 10 A Td(off) Turn-Off Delay Time 700 nS VGE = 15 V, Rg = 100 tf Fall Time 1500 nS Switching-Inductive Load tr(Volt) Off Voltage Rise Time .35 µS VCEclamp = 400 V, IC = 5 A tf Fall Time .81 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 1.2 µS L = 0.1 mH, Tj = 100°C Eoff Turn-Off Losses .95 mJ Switching-Inductive Load Td(off) Turn-Off Delay Time 1.2 µS tf Fall Time 1.5 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 2.0 µS L = 180 µH, Tj = 100°C Eoff Turn-Off Losses 4.0 mJ VCEclamp = 350 V, IC = 10 A OM6501ST - OM6502ST 3.1 PRELIMINARY DATA: OM6501ST