OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM11N60 OM11N55 VDS 600V 550V RDS(on) .50 .44 SCHEMATIC DRAIN GATE SOURCE 4 11 R1 Supersedes 2 04 R0 3.1 - 19 ID(MAX) 11A 11A 3.1 TC = 25° unless otherwise noted STATIC P/N OM11N60SA ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM11N55SA Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 600 BVDSS Drain-Source Breakdown 550 V Voltage VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage ± 100 IDSS Zero Gate Voltage Drain 0.1 0.25 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 nA VGS = ± 20 V IGSSF Gate-Body Leakage Forward ±100 nA VGS = ± 20 V mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C On-State Drain Current1 11.0 VDS(on) Static Drain-Source On-State 3.1 TC = 125° C On-State Drain Current1 A VDS > ID(on) x RDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 5.5 A VDS(on) Static Drain-Source On-State Voltage1 11.0 3.3 A VDS > ID(on) x RDS(on), VGS = 10 V V VGS = 10 V, ID = 5.5 A Voltage1 RDS(on) Static Drain-Source On-State .47 .50 VGS = 10 V, ID = 5.5 A RDS(on) Static Drain-Source On-State Resistance1 .37 .44 VGS = 10 V, ID = 5.5 A .88 VGS = 10 V, ID = 5.5 A, Resistance1 RDS(on) Static Drain-Source On-State 1.0 VGS = 10 V, ID = 5.5 A, Resistance1 RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC (W ) 3.1 - 20 DYNAMIC TC = 125 C gfs Forward Transductance1 Ciss Input Capacitance 3000 pF Coss Output Capacitance 440 Crss Reverse Transfer Capacitance Td(on) tr (W ) ID(on) gfs Forward Transductance1 VGS = 0 Ciss Input Capacitance 3000 pF pF VDS = 25 V Coss Output Capacitance 440 pF VDS = 25 V 220 pF f = 1 MHz Crss Reverse Transfer Capacitance 220 pF f = 1 MHz Turn-On Delay Time 55 ns VDD = 210 V, ID @ 7.0 A Td(on) Turn-On Delay Time 55 ns VDD = 210 V, ID @ 7.0 A Rise Time 75 ns Rg = 5 W , RL = 30 W tr Rise Time 75 ns Rg = 5 W , RL = 30 W Td(off) Turn-Off Delay Time 225 ns Td(off) Turn-Off Delay Time 225 ns tf Fall Time 135 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 135 ns (MOSFET) switching times are essentially independent of operating temperature. 5.0 S(W ) VDS 2 VDS(on), ID = 5.5 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 11 A (Body Diode) ISM - 52 A (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time the integral P-N D IS 700 Continuous Source Current G ISM VGS = 0 A - 52 A (Body Diode) S V TC = 25 C, IS = -11 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D symbol showing Source Current1 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 11 (Body Diode) Junction rectifier. - 1.4 S(W ) VDS 2 VDS(on), ID = 5.5 A BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 5.0 the integral P-N G Junction rectifier. - 1.4 700 V ns S TC = 25 C, IS = -11 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms OM11N60SA - OM11N55SA 3.1 ELECTRICAL CHARACTERISTICS: OM11N60SA - OM11N55SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter OM11N60 OM11N55 Units VDGR Drain Source Voltage 600 550 V VDS Drain Gate Voltage (RGS = 1.0 M ) 600 550 V ID Continuous Drain Current @ TC = 25°C 11 11 A ID Continuous Drain Current @ TC = 100°C 7.2 7.2 A IDM Pulsed Drain Current 52 52 A PD Max. Power Dissipation @ TC = 25°C 125 125 W PD Max. Power Dissipation @ TC = 100°C 50 50 W Linear Derating Factor Jct. to Case 1.0 1.0 W/°C Linear Derating Factor Jct. to Ambient .020 .020 W/°C TJ, Tstg 1 Operating and Storage Temp. Range Lead Temperature (1/16" from case for 10 sec.) -55 to 150 300 °C 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. THERMAL RESISTANCE (Maximum at TA = 25°C) RthJC Junction-to-Case 1.0 1.0 °C/W RthJA Junction-to-Ambient (Free Air Operation) 50 50 °C/W 3.1 3.1 - 21 OM11N60SA - OM11N55SA MECHANICAL OUTLINES .545 .535 .144 DIA. .050 .040 .800 .790 .685 .665 .550 .530 .550 .510 .005 .045 .035 .150 TYP. .260 .249 .150 TYP. TO-254 AA Package .940 .260 MAX .740 .540 .200 .100 2 PLCS. 3.1 .040 .250 .290 .125 DIA. 2 PLS. .540 .125 2 PLCS. .500 MIN. .150 .040 DIA. 3 PLCS. .300 .150 Omnirel AZ Package For Z-Pack configuration, add letter “Z” to part number, Example - OMXXXXSAZ Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter “C” to part number, Example - OMXXXXCSA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246