NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1048A ISSUE 1- FEBRUARY 1997 FEATURES * * * * * * C VCEO = 17.5V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 17.5 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 20 A Continuous Collector Current IC 5 A Base Current IB 500 mA P tot 2.5 W -55 to +150 °C Power Dissipation at T amb=25°C † Operating and Storage Temperature Range T j:T stg † The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. FZT1048A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCES 50 85 V IC=100µA* Collector-Emitter Breakdown Voltage VCEO 17.5 24 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 50 85 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5 8.7 V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=35V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCE=35V Collector-Emitter Saturation VCE(sat) Voltage 27 55 155 250 45 75 210 350 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=5A, IB=25mA* Base-Emitter Saturation Voltage VBE(sat) 920 1000 mV IC=5A, IB=25mA* Base-Emitter Turn-On Voltage VBE(on) 880 970 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 300 300 180 50 440 450 450 300 80 Transition Frequency fT 150 Output Capacitance Cobo 60 ton toff IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* 1200 MHz IC=50mA, VCE=10V f=50MHz pF VCB=10V, f=1MHz 120 ns IC=4A, IB=40mA, VCC=10V 310 ns IC=4A, IB=40mA, VCC=10V 80 Switching Times FZT1048A TYPICAL CHARACTERISTICS +25°C IC/IB=100 1 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.6 IC/IB=200 IC/IB=100 IC/IB=50 0.4 0.4 +150°C +100°C +25°C -55°C 0.2 0.2 0 0 1m 10m 100m 1 10 1m 100 IC - Collector Current (A) VCE(sat) v IC 1.2 10m IC - 100m 1 10 100 Collector Current (A) VCE(sat) v IC IC/IB=100 VCE=2V 800 +100°C +25°C -55°C 600 VBE(sat) - (V) hFE - Typical Gain 1 400 0.8 0.6 -55°C +25°C +100°C +150°C 0.4 200 0.2 0 1m 10m 100m 1 10 0 100 1m IC - Collector Current (A) hFE v IC 100m 1 10 100 IC - Collector Current (A) VBE(sat) v IC 1.5 1.2 0.9 0.6 -55°C +25°C +100°C +150°C 0.3 0 1m 10m IC - 100m 1 10 Collector Current (A) VBE(on) v IC 100 IC - Collector Current (A) 100 VCE=2V VBE(on) - (V) 10m 10 1 100m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100