SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL618 ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL718 PARTMARKING DETAIL – L68 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1.25 A Peak Pulse Current ICM 4 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C FMMTL618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 60 105 MAX. V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 20 30 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 8.5 V IE=100µA Collector Cut-Off Current ICBO 10 nA VCB=16V Emitter Cut-Off Current IEBO 10 nA VEB=4V Collector Cut-Off Current ICES 10 nA VCE=16V Collector-Emitter Saturation Voltage VCE(sat) 18 80 130 170 260 35 160 200 280 350 mV mV mV mV mV IC=100mA, IB=10mA* IC=500mA, IB=25mA* IC=1A, IB=100mA* IC=1.25A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1000 1100 mV IC=1.25A, IB=100mA* Base-Emitter Turn On Voltage VBE(on) 850 1000 mV IC=1.25A, VCE=2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 195 Collector-Base Breakdown Voltage Cobo 9 Switching times ton toff 72 388 200 300 250 200 100 50 IC=10mA, VCE=2V IC=200mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* 400 440 400 300 190 100 12 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ns ns IC=1A, VCC=10V IB1=-IB2=10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMTL618 TYPICAL CHARACTERISTICS IC/IB=10 +25°C 300m VCE(sat) - (V) VCE(sat) - (V) 300m 200m IC/IB=10 IC/IB=20 IC/IB=50 100m 0 1mA -55°C +25°C +100°C 200m 100m 0 10mA 100mA 1A IC - Collector Current (A) 10A 1m VCE(sat) v IC VCE=2V 1.0 100m 1A 10A IC/IB=10 0.8 VBE(sat) - (V) hFE - Typical Gain 600 10m IC - Collector Current (A) VCE(sat) v IC 300 0.6 0.4 -55°C +25°C +100°C +100°C +25°C 0.2 -55°C 0 1mA 10mA 100mA 1A IC - Collector Current (A) 0 1mA 10A 10mA 100mA 1A IC - Collector Current (A) hFE v IC 10A VBE(sat) v IC 10A 1.0 IC - Collector Current (A) VCE=2V VBE(on) - (V) 0.8 0.6 0.4 -55°C +25°C 0.2 0 1mA +100°C 10mA 100mA 1A IC - Collector Current (A) VBE(on) v IC 10A 1A 100m 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100