SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 0.2 0 1mA 10mA 100mA 1A 10A COMPLEMENTARY TYPE- FMMT491 PARTMARKING DETAIL - 591 PARAMETER SYMBOL VALUE UNIT 0.1 Collector-Base Voltage VCBO -80 V 0 Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A 10mA 1mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC 400 VCE(sat) v IC VCE=5V IC/IB=10 1.0 300 +100 °C 200 +25 °C 0.8 0.2 1.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 10A 10 VCE=5V 1.0 1 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.1 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V IC -1 A Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER -55 °C +25 °C +100 °C -55 °C 0 1mA Continuous Collector Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 0.4 100 B ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 100V SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=0 Collector-Emitter Cut-Off Current ICES -100 nA VCES=-60V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.6 V V IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT 150 Output Capacitance Cobo IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 138 E C IC/IB=10 0.3 IC/IB=10 IC/IB=50 FMMT591 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low Equivalent on resistance RCE(sat)=355mΩ at 1A* 3 - 137 VCB=-10V, f=1MHz SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 0.2 0 1mA 10mA 100mA 1A 10A COMPLEMENTARY TYPE- FMMT491 PARTMARKING DETAIL - 591 PARAMETER SYMBOL VALUE UNIT 0.1 Collector-Base Voltage VCBO -80 V 0 Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A 10mA 1mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC 400 VCE(sat) v IC VCE=5V IC/IB=10 1.0 300 +100 °C 200 +25 °C 0.8 0.2 1.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 10A 10 VCE=5V 1.0 1 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.1 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V IC -1 A Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER -55 °C +25 °C +100 °C -55 °C 0 1mA Continuous Collector Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 0.4 100 B ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 100V SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* -5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=0 Collector-Emitter Cut-Off Current ICES -100 nA VCES=-60V Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.6 V V IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT 150 Output Capacitance Cobo IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 MHz IC=-50mA, VCE=-10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 138 E C IC/IB=10 0.3 IC/IB=10 IC/IB=50 FMMT591 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low Equivalent on resistance RCE(sat)=355mΩ at 1A* 3 - 137 VCB=-10V, f=1MHz