SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL - 0.3 IC/IB=10 IC/IB=50 0.2 IC/IB=10 SOT23 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 B FMMT591 491 PARAMETER SYMBOL VALUE UNIT 0.1 0.1 Collector-Base Voltage VCBO 80 V 0 0 Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 500 mW -55 to +150 °C 1mA 10mA 100mA 1A 10A 10mA 1mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC 400 100mA VCE(sat) v IC VCE=5V IC/IB=10 1.0 300 +100 °C 200 +25 °C 100 -55 °C 0.6 -55 °C +25 °C +100 °C 0.4 0.2 1.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 10A 10 VCE=5V 1.0 1 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.1 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0 1mA Power Dissipation at Tamb=25°C DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=60V Collector Cut-Off Current ICES 100 nA VCES=60V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.50 V V IC=500mA, IB=50mA* IC=1A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE 100 100 80 30 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo 100V MAX. IC=1mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 116 3 - 115 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL - 0.3 IC/IB=10 IC/IB=50 0.2 IC/IB=10 SOT23 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 B FMMT591 491 PARAMETER SYMBOL VALUE UNIT 0.1 0.1 Collector-Base Voltage VCBO 80 V 0 0 Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A 500 mW -55 to +150 °C 1mA 10mA 100mA 1A 10A 10mA 1mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC 400 100mA VCE(sat) v IC VCE=5V IC/IB=10 1.0 300 +100 °C 200 +25 °C 100 -55 °C 0.6 -55 °C +25 °C +100 °C 0.4 0.2 1.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 10A 10 VCE=5V 1.0 1 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.1 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0 1mA Power Dissipation at Tamb=25°C DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=60V Collector Cut-Off Current ICES 100 nA VCES=60V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.50 V V IC=500mA, IB=50mA* IC=1A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE 100 100 80 30 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo 100V MAX. IC=1mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 116 3 - 115