NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device. NSM11156DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications. http://onsemi.com (3) (2) Q1 Q2 R2 Features •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Q1: PNP BRT, R1 = R2 = 10 k •Q2: PNP •This is a Pb-Free Device (4) (5) SC-88/SOT-363 CASE 419B STYLE 1 MARKING DIAGRAM 6 N6 M G G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector‐Base Voltage VCBO -50 Vdc Collector‐Emitter Voltage VCEO -50 Vdc IC -100 mAdc Symbol Value Unit Collector - Base Voltage V(BR)CBO -80 Vdc Collector - Emitter Voltage V(BR)CEO -65 Vdc Emitter - Base Voltage V(BR)EBO -5.0 Vdc IC -100 mAdc Rating - Q2 (PNP) Collector Current - Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 0 (6) 1 •Logic Switching •Amplification •Driver Circuits •Interface Circuits Collector Current R1 6 Applications Rating - Q1 (PNP BRT) (1) 1 1 N6 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device NSM11156DW6T1G Package Shipping† SC-88 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSM11156DW6/D NSM11156DW6T1G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Total Device Dissipation TA = 25°C Derate above 25°C Max Unit 180 (Note 1) 1.44 (Note 1) mW mW/°C RqJA 692 (Note 1) °C/W Symbol Max Unit 230 1.83 mW mW/°C RqJA 544 °C/W TJ, Tstg -55 to +150 °C PD Thermal Resistance, Junction‐to‐Ambient Characteristic (Both Junctions Heated) Total Device Dissipation, TA = 25°C Derate above 25°C PD Thermal Resistance, Junction‐to‐Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS - Q1 (PNP BRT) (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector‐Base Cutoff Current (VCB = -50 V, IE = 0) ICBO - - -100 nAdc Collector‐Emitter Cutoff Current (VCE = -50 V, IB = 0) ICEO - - -500 nAdc Emitter‐Base Cutoff Current (VEB = -6.0 V, IC = 0) IEBO - - -0.5 mAdc Collector‐Base Breakdown Voltage (IC = -10 mA, IE = 0) V(BR)CBO -50 - - Vdc Collector‐Emitter Breakdown Voltage (Note 2) (IC = -2.0 mA, IB = 0) V(BR)CEO -50 - - Vdc hFE 35 60 - VCE(sat) - - -0.25 Vdc Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 kW) VOL - - -0.2 Vdc Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 kW) VOH -4.9 - - Vdc Input Resistor R1 7.0 10 13 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = -10 V, IC = -5.0 mA) Collector‐Emitter Saturation Voltage (IC = -10 mA, IB = -0.3 mA) 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSM11156DW6T1G ELECTRICAL CHARACTERISTICS - Q2 (PNP) (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -65 - - V Collector-Emitter Breakdown Voltage (IC = -10 mA, VEB = 0) V(BR)CES -80 - - V Collector-Base Breakdown Voltage (IC = -10 mA) V(BR)CBO -80 - - V Emitter-Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V ICBO - - -15 -4.0 nA mA 220 150 290 475 - - -0.3 -0.65 - -0.7 -0.9 - -0.6 - - -0.75 -0.82 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150°C) ON CHARACTERISTICS hFE DC Current Gain (IC = -10 mA, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) - V V V PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 3 150 NSM11156DW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE V D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E1 2 3 b 6 PL 0.2 (0.008) M E M A3 STYLE 1: PIN 1. 2. 3. 4. 5. 6. C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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