FGD4536 360V, PDP IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new series of • Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • High Input Impedance • Fast Switching • RoHS Compliant Application • PDP System C D-PAK G E Absolute Maximum Ratings Symbol Description Ratings Units 360 V VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage ± 30 V IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A Maximum Power Dissipation @ TC = 25oC 125 W Maximum Power Dissipation @ TC = 100oC 50 PD W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. - 1.0 o C/W 62.5 o C/W - Units Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1µsec * Ic_pluse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. A 1 www.fairchildsemi.com FGD4536 360V, PDP IGBT March 2011 Device Marking Device Package Reel Size Tape Width Quantity FGD4536 FGD4536TM TO252 380mm 16mm - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 360 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.4 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 2.4 3.3 4.0 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - 1.19 - V IC = 30A, VGE = 15V - 1.33 - V IC = 50A, VGE = 15V, TC = 25oC - 1.59 1.8 V IC = 50A, VGE = 15V, TC = 125oC - 1.66 - V - 1295 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 56 - pF - 43 - pF - 5 - ns - 20 - ns - 41 - ns - 182 - ns - 5 - ns - 21 - ns - 43 - ns - 249 - ns - 47 - nC - 5.4 - nC - 15 - nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGD4536 Rev. A VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGD4536 360V, PDP IGBT Package Marking and Ordering Information FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics Collector Current, IC [A] 20V 12V 15V VGE = 8V 100 50 150 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 Common Emitter VGE = 15V Collector Current, IC [A] Collector Current, IC [A] o TC = 125 C 100 50 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 Common Emitter VCE = 10V 200 o 0 0 Figure 4. Transfer Characteristics TC = 25 C 0 VGE = 8V 50 6 Figure 3. Typical Saturation Voltage Characteristics 150 12V 10V 100 0 200 15V 10V 150 0 20V o TC = 125 C 200 Collector Current, IC [A] o TC = 25 C 200 Figure 2. Typical Output Characteristics o TC = 25 C o 150 100 50 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level TC = 125 C 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 1.7 20 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 50A 1.6 1.5 1.4 30A 1.3 1.2 1.1 1.0 20 FGD4536 Rev. A IC = 20A Common Emitter VGE = 15V o TC = 25 C 16 50A 12 8 3 IC = 20A 4 0 40 60 80 100 120 140 o Collector-EmitterCase Temperature, TC [ C] 30A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 2400 Common Emitter VGE = 0V, f = 1MHz o TC = 125 C 2000 16 o TC = 25 C 50A Capacitance [pF] Collector-Emitter Voltage, VCE [V] Common Emitter 12 30A 8 IC = 20A 1600 Cies 1200 800 Coes 4 400 Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 0.1 20 Figure 9. Gate charge Characteristics 500 100 Collector Current, Ic [A] 12 200V 9 VCC = 100V 6 3 10µs 100µs 1ms DC 10 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 Common Emitter o TC = 25 C 0 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] 1 10 Collector-Emitter Voltage, VCE [V] 0 10 20 30 Gate Charge, Qg [nC] 40 0.01 0.1 50 Figure 11. Turn-on Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 100 1000 Switching Time [ns] Switching Time [ns] tf tr 10 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A 100 td(off) Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 25 C o TC = 125 C 1 0 10 20 30 o TC = 125 C 40 10 50 Gate Resistance, RG [Ω ] FGD4536 Rev. A 0 10 20 30 40 50 Gate Resistance, RG [Ω ] 4 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 100 400 Switching Time [ns] Switching Time [ns] tr 10 td(on) Common Emitter VGE = 15V, RG = 5Ω tf 100 o o TC = 25 C TC = 25 C o o TC = 125 C 1 10 20 30 40 td(off) Common Emitter VGE = 15V, RG = 5Ω TC = 125 C 10 10 50 Collector Current, IC [A] 20 30 40 50 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current 5000 1000 Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C Switching Loss [uJ] Switching Loss [uJ] 1000 o TC = 125 C Eoff 100 Eon Eoff 100 Eon Common Emitter VGE = 15V, RG = 5Ω 10 o TC = 25 C o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω ] 1 50 10 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 500 Collector Current, IC [A] 100 10 1 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 1 FGD4536 Rev. A 10 100 Collector-Emitter Voltage, VCE [V] 500 5 www.fairchildsemi.com FGD4536 360V, PDP IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 single pulse 0.01 -5 10 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 -3 10 10 -2 10 -1 10 Rectangular Pulse Duration [sec] FGD4536 Rev. A 6 www.fairchildsemi.com FGD4536 360V, PDP IGBT Mechanical Dimensions D-PAK Dimensions in Millimeters FGD4536 Rev. A 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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