FGH60N60SF tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 120 A A @ TC = 25 C @ TC = 25oC 378 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds ± 20 A o Storage Temperature Range V 60 Maximum Power Dissipation Tstg Units 600 180 o Pulsed Collector Current @ TC = 100 C 151 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 o C/W RθJA Thermal Resistance, Junction to Ambient - 40 o C/W ©2008 Fairchild Semiconductor Corporation FGH60N60SF Rev. A 1 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT July 2008 Device Marking Device Package Packaging Type FGH60N60SF FGH60N60SFTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.4 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 60A, VGE = 15V - 2.3 2.9 V IC = 60A, VGE = 15V, TC = 125oC - 2.5 - V - 2820 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 350 - pF - 140 - pF Switching Characteristics td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 134 - ns tf Fall Time - 31 62 ns Eon Turn-On Switching Loss - 1.79 - mJ Eoff Turn-Off Switching Loss - 0.67 - mJ Ets Total Switching Loss - 2.46 - mJ td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time - 144 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.0 - mJ Ets Total Switching Loss - 2.88 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH60N60SF Rev. A VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 60A, VGE = 15V 2 - 43 - ns - 1.88 - mJ - 198 - nC - 22 - nC - 106 - nC www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 180 180 o 15V 150 12V 10V 120 90 60 VGE = 8V 15V 12V 10V 120 90 60 VGE = 8V 30 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 125 C 120 Common Emitter VCE = 20V 150 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 20V 150 30 90 60 o TC = 25 C o TC = 125 C 120 30 90 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1 2 3 4 Gate-Emitter Voltage,VGE [V] 5 Figure 6. Saturation Voltage vs. VGE 4.0 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] o TC = 125 C 20V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] Figure 2. Typical Output Characteristics 3.5 120A 3.0 2.5 60A 2.0 IC = 30A 1.5 Common Emitter o TC = -40 C 16 12 8 120A 4 60A IC = 30A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGH60N60SF Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 120A 4 60A IC = 30A 0 0 TC = 125 C 16 12 8 60A 4 IC = 30A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 6000 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 5000 Capacitance [pF] 120A o TC = 25 C Cies 4000 3000 Coes 2000 1000 TC = 25 C 12 300V VCC = 100V 9 200V 6 3 Cres 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA Characteristics 500 300 10µs 100 100 100µs 10 Collector Current, IC [A] Collector Current, Ic [A] 50 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o 0.01 VGE = 15V, TC = 125 C 1 1 FGH60N60SF Rev. A 10 100 Collector-Emitter Voltage, VCE [V] 1000 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 4 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) o 1000 TC = 25 C o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 10 0 10 20 30 40 Gate Resistance, RG [Ω] 0 50 20 40 50 Figure 16. Turn-off Characteristics vs. Collector Current 500 1000 Common Emitter VGE = 15V, RG = 5Ω Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 25 C o Switching Time [ns] o TC = 125 C tr 100 td(on) TC = 125 C td(off) 100 tf 10 0 20 40 60 80 100 10 120 0 20 40 Collector Current, IC [A] 60 80 100 120 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance Figure 18. Switching Loss vs Collector Current 30 20 10 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 5Ω 10 IC = 60A o TC = 25 C o TC = 25 C Switching Loss [mJ] Switching Loss [mJ] 30 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs. Collector Current Switching Time [ns] 10 o TC = 125 C Eon Eoff 1 0.5 0 FGH60N60SF Rev. A Eon o TC = 125 C Eoff 1 0.1 10 20 30 40 Gate Resistance, RG [Ω] 50 0 20 40 60 80 100 120 Collector Current, IC [A] 5 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT Typical Performance Characteristics FGH60N60SF 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH60N60SF Rev. A 6 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH60N60SF Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FGH60N60SF Rev. A 8 www.fairchildsemi.com FGH60N60SF 600V, 60A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.