FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance. High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. TO-3P G C E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage @ TC = 25oC Collector Current IC @ TC = Collector Current ICM (1) PD 100oC Pulsed Collector Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation o @ TC = 100 C Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Units 1000 V ± 25 V 50 A 35 A 200 A 156 W 63 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.8 o C/W RθJA Thermal Resistance, Junction to Ambient - 40.0 o C/W ©2009 Fairchild Semiconductor Corporation FGA50N100BNT Rev. A 1 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 Device Marking Device Package Packaging Type FGA50N100BNT FGA50N100BNTTU TO-3PN Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 - - V ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V - - 1.0 mA IGES G-E Leakage Current VGE = ±25V, VCE = 0V - - ±500 nA IC = 60mA, VCE = VGE 4.0 5.5 7.0 V - 1.5 1.8 V 2.5 2.9 V - V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC - 3.1 - 6000 - pF VCE = 10V, VGE = 0V, f = 1MHz - 260 - pF - 200 - pF - 34 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA50N100BNT Rev. A VCC = 600V, IC = 60A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCE = 600V, IC = 60A, VGE = 15V, TC = 25oC 2 - 68 - ns - 243 - ns - 65 100 ns - 257 350 nC - 45 - nC - 95 - nC www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Package Marking and Ordering Information Figure 1. Typical Output Characteristics 200 200 o TC = 25 C o 20V 15V TC = 125 C 20V 10V 15V 10V 160 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 9V 120 80 8V 40 160 9V 120 8V 80 7V 40 7V VGE = 6V VGE = 6V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 0 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VCE = 20V Common Emitter VGE = 15V o 160 Collector Current, IC [A] Collector Current, IC [A] 10 Figure 4. Transfer Characteristics 200 TC = 25 C o TC = 125 C 120 80 o 160 TC = 25 C o TC = 125 C 120 80 40 40 0 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 2 7 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 4.5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, VCE [V] 90A 60A 3.0 30A IC = 10A 1.5 Common Emitter o TC = -40 C 16 12 60A 8 30A 4 90A IC = 10A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGA50N100BNT Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 60A 8 30A 90A 4 IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 60A 8 IC = 10A 0 20 0 Figure 9. Capacitance Characteristics 90A 30A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 8000 Common Emitter Capacitance [pF] 6000 Gate-Emitter Voltage, VGE [V] o Cies Common Emitter VGE = 0V, f = 1MHz o 4000 TC = 25 C 2000 Coes VCC = 200V 9 400V 600V 6 3 Cres 0 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 55 110 165 220 Gate Charge, Qg [nC] 275 Figure 12. Load Current vs. Frequency 120 500 VCC = 600V Load Current [A] load Current : peak of square wave 100 Collector Current, Ic [A] TC = 25 C 12 10µs 10 100µs 1ms 1 100 80 60 10 ms 40 DC *Notes: 0.1 o 1. TC = 25 C : 50% 20 Duty cycle o o T = 100 C 2. TJ = 150 C 3. Single Pulse 0.01 1 C Power Dissipation = 63W 0 0 10 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] FGA50N100BNT Rev. A 4 1 2 10 10 Frequency [kHz] 3 10 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 2000 1000 100 Switching Time [ns] Switching Time [ns] td(off) tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 60A 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 60A o TC = 25 C o TC = 25 C o TC = 125 C 10 10 o 20 30 40 Gate Resistance, RG [Ω] TC = 125 C 10 10 50 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs. Collector Current Figure 16. Turn-off Characteristics vs. Collector Current 200 1000 100 td(off) Switching Time [ns] Switching Time [ns] tr td(on) Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C tf o TC = 125 C o TC = 25 C o TC = 125 C 10 10 20 30 40 50 60 70 80 90 10 10 100 20 30 Collector Current, IC [A] 40 50 60 70 80 90 100 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance Fig 18. Switching Loss vs. Collector Current 30 50 Common Emitter VCC = 600V, VGE = 15V 10 Switching Loss [mJ] IC = 60A Switching Loss [mJ] o TC = 25 C o 10 TC = 125 C Eon Eoff Eon Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 60A o TC = 25 C o TC = 125 C 1 10 FGA50N100BNT Rev. A 20 30 40 Gate Resistance, RG [Ω] 0.1 10 50 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] 5 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Typical Performance Characteristics Figure 19. Turn off Switching SOA Characterisics 250 Collector Current, IC [A] 100 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 1000 3000 100 Collector-Emitter Voltage, VCE [V] Figure 20.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA50N100BNT Rev. A 6 www.fairchildsemi.com FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK Mechanical Dimensions TO-3PN FGA50N100BNT Rev. A 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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