FAIRCHILD FGA30N60LSD

FGA30N60LSD
tm
Features
General Description
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
C
G
E
Absolute Maximum Ratings
Symbol
Description
FGA30N60LSD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C
60
A
Collector Current
@ TC = 100°C
30
A
ICM (1)
Pulsed Collector Current
90
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
150
A
PD
Maximum Power Dissipation
@ TC = 25°C
480
W
Maximum Power Dissipation
@ TC = 100°C
192
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.26
°C/W
RθJC(Diode)
Thermal Resistance, Junction-to-Case
--
0.92
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev. A
1
www.fairchildsemi.com
FGA30N60LSD
October 2008
Device Marking
Device
Package
Packaging
Type
FGA30N60LSD
FGA30N60LSDTU
TO-3PN
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
--
0.6
--
V/°C
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±250
nA
4.0
5.5
7.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 30A, VGE = 15V
--
1.1
1.4
V
IC = 30A, VGE = 15V,
TC = 125°C
--
1.0
--
V
IC = 60 A, VGE = 15V
--
1.3
--
V
--
3550
--
pF
VCE = 30V, VGE = 0V,
f = 1MHz
--
245
--
pF
--
90
--
pF
18
--
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
tr
Rise Time
--
46
--
ns
td(off)
Turn-Off Delay Time
--
250
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
td(on)
VCC = 400 V, IC = 30A,
RG = 6.8Ω, VGE = 15V,
Inductive Load, TC = 25°C
--
1.3
2.0
us
--
1.1
--
mJ
Turn-Off Switching Loss
--
21
--
mJ
Turn-On Delay Time
--
17
--
ns
tr
Rise Time
--
45
--
ns
td(off)
Turn-Off Delay Time
--
270
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 400 V, IC = 30A,
RG =6.8Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 30A,
VGE = 15V
Measured 5mm from PKG
2
FGA30N60LSD Rev. A
--
2.6
--
us
--
1.1
--
mJ
--
36
--
mJ
--
225
--
nC
--
30
--
nC
--
105
--
nC
--
7
--
nH
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FGA30N60LSD
Package Marking and Ordering Information
Parameter
TC = 25°C unless otherwise noted
Min.
Typ.
Max
Units
VFM
IF = 15A
IF = 15A
Conditions
TC = 25 °C
TC = 125 °C
-
1.8
1.6
2.2
-
V
V
IRM
VR = 600V
TC = 25 °C
-
-
100
µA
trr
IF =1A, di/dt = 100A/µs, VCC = 30V
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
-
-
35
40
ns
ns
ta
tb
Qrr
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
18
13
27.5
-
ns
ns
nC
3
FGA30N60LSD Rev. A
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FGA30N60LSD
Electrical Characteristics of the Diode
FGA30N60LSD
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
90
90
o
60
30
15V
12V
10V
8V
60
30
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
4
0
Figure 3. Typical Saturation Voltage
Characteritics
4
90
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 125 C
60
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1
2
3
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer characteristics
90
o
TC = 125 C
60
30
30
0
0
0
1
2
Collector-Emitter Voltage, VCE [V]
0
3
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. Vge
20
1.4
Common Emitter
VGE = 15V
Common Emitter
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
VGE = 20V
TC = 125 C
15V
12V
10V
8V
Collector Current, IC [A]
Collector Current, IC [A]
o
VGE = 20V
TC = 25 C
60A
1.2
30A
1.0
IC = 15A
0.8
0.6
25
o
T = 25 C
C
16
12
8
4
60A
30A
IC = 15A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
0
4
FGA30N60LSD Rev. A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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(Continued)
Figure 7. Saturation Voltage vs. Vge
20
FGA30N60LSD
Typical Performance Characteristics
Figure 8. Capacitance characteristics
13000
10000
Common Emitter
TC = 125 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
30A 60A
TC = 25 C
Cres
4
IC = 15A
100
50
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
0
Figure 9. Gate Charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
300
15
Common Emitter
IC = 30A
o
12 TC = 25 C
Ic MAX (Pulsed)
100
Vcc = 100V
9
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
1000
0
300V
200V
6
3
0
0
50
100
150
200
Gate Charge, Qg [nC]
10
1ms
1 Single Nonrepetitive
o
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
DC Operation
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
200
Vcc = 400V
load Current : peak of square wave
100
Switching Time [ns]
60
50
40
30
20
10
100µs
Figure 12. Turn-On Characteristics vs.
Gate Resistance
80
70
50µs
Ic MAX (Continuous)
0.1
0.1
250
Figure 11. Load Current Vs. Frequency
Load Current [A]
Common Emitter
VGE = 0V, f = 1MHz
Coes
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(on)
Duty cycle : 50%
o
Tc = 100 C
Powe Dissipation = 192W
0
0.1
1
10
100
Frequency [kHz]
o
TC = 25 C
o
TC = 125 C
10
1000
0
20
30
40
50
Gate Resistance, RG [Ω]
5
FGA30N60LSD Rev. A
10
www.fairchildsemi.com
(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
500
3000
Common Emitter
VGE = 15V, RG = 6.8Ω
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
o
tf
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(off)
TC = 125 C
100
tr
td(on)
10
o
TC = 25 C
o
TC = 125 C
100
0
10
20
30
40
20
50
30
40
Figure 15. Turn-Off Characteristics vs.
Collector Current
60
70
80
Figure 16. Switching Loss vs
Gate Resistance
6000
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
Switching Loss [mJ]
tf
Switching Time [ns]
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
1000
Common Emitter
VGE = 15V, RG = 6.8Ω
o
TC = 25 C
o
td(off)
TC = 125 C
o
100 TC = 25 C
o
Eoff
TC = 125 C
10
Eon
100
20
30
40
50
60
70
1
80
Collector Current, IC [A]
5
10
15
20
25
30
35
40
45
50
Gate Resistance, RG [Ω]
Figure 17.Switching Loss vs Collector Current
Figure 18. Turn-Off Switching
SOA Characteristics
200
100
100
Collector Current, IC [A]
Switching Loss [mJ]
Eoff
10
Eon
1
Common Emitter
VGE = 15V, RG = 6.8Ω
10
o
TC = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
o
TC = 125 C
0.1
10
1
20
30
40
50
60
70
80
1
Collector Current, IC [A]
6
FGA30N60LSD Rev. A
10
100
1000
Collector-Emitter Voltage, VCE [V]
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FGA30N60LSD
Typical Performance Characteristics
FGA30N60LSD
Figure 19. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
PDM
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 20. Typical Forward Voltage Drop
10
Figure 21. Typical Reverse Current
100
1E-4
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
1
10
o
TC=125 C
1
o
TC=75 C
1E-5
o
TC = 125 C
o
1E-6
TC = 75 C
1E-7
o
TC = 25 C
1E-8
o
TC=25 C
0.1
0.0
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
FORWARD VOLTAGE, VF [V]
100
200
300
400
500
600
REVERSE VOLTAGE, VR [V]
REVERSE RECOVERY TIME, trr [ns]
Figure 22. Typical Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
IF = 15A
o
TC = 125 C
o
TC = 75 C
o
TC = 25 C
200
300
400
500
di/dt [A/µs]
7
FGA30N60LSD Rev. A
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FGA30N60LSD
8
FGA30N60LSD Rev. A
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Rev. I35
9
FGA30N60LSD Rev. A
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FGA30N60LSD
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