FAIRCHILD FGH75N60UF

FGH75N60UF
tm
600V, 75A Field Stop IGBT
Features
General Description
• High Current Capability
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
TL
V
150
A
A
@ TC = 25 C
@ TC = 25oC
452
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
 20
A
o
Storage Temperature Range
V
75
Maximum Power Dissipation
Tstg
Units
600
225
o
Pulsed Collector Current
@ TC = 100 C
181
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.276
o
C/W
RJA
Thermal Resistance, Junction to Ambient
-
40
o
C/W
©2009 Fairchild Semiconductor Corporation
FGH75N60UF Rev. A1
1
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
April 2009
Device Marking
Device
Package
Packaging
Type
FGH75N60UF
FGH75N60UFTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
-
0.75
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
4.0
5.0
6.5
V
IC = 75A, VGE = 15V
-
1.9
2.4
V
IC = 75A, VGE = 15V,
TC = 125oC
-
2.15
-
V
-
3850
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
375
-
pF
-
147
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
27
-
ns
tr
Rise Time
-
70
-
ns
td(off)
Turn-Off Delay Time
-
128
-
ns
tf
Fall Time
-
30
80
ns
Eon
Turn-On Switching Loss
-
3.05
-
mJ
Eoff
Turn-Off Switching Loss
-
1.35
-
mJ
VCC = 400V, IC = 75A,
RG = 3, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
4.4
-
mJ
td(on)
Turn-On Delay Time
-
27
-
ns
tr
Rise Time
-
74
-
ns
td(off)
Turn-Off Delay Time
-
153
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
1.8
-
mJ
Ets
Total Switching Loss
-
5.4
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGH75N60UF Rev. A1
VCC = 400V, IC = 75A,
RG = 3, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 75A,
VGE = 15V
2
-
35
-
ns
-
3.6
-
mJ
-
250
-
nC
-
30
-
nC
-
130
-
nC
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FGH75N60UF 600V, 75A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
225
Figure 2. Typical Output Characteristics
225
o
20V
12V
10V
135
90
VGE = 8V
45
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
10V
135
90
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
6.0
Figure 4. Transfer Characteristics
225
225
Common Emitter
VGE = 15V
o
180
Common Emitter
VCE = 20V
100
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
VGE = 8V
45
6
Figure 3. Typical Saturation Voltage
Characteristics
o
TC = 125 C
135
90
o
TC = 25 C
o
TC = 125 C
10
45
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
1
4
2
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3.0
150A
2.4
75A
1.8
IC = 40A
1.2
25
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
3.6
Collector-Emitter Voltage, VCE [V]
12V
180
0
0
15V
20V
15V
Collector Current, IC [A]
Collector Current, IC [A]
180
o
TC = 125 C
TC = 25 C
Common Emitter
o
TC = -40 C
16
12
8
4
75A
150A
IC = 40A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGH75N60UF Rev. A1
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Figure 8. Saturation Voltage vs. VGE
16
12
8
150A
4
75A
IC = 40A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
8
IC = 40A
0
20
Figure 9. Capacitance Characteristics
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
8000
15
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
6000
Capacitance [pF]
150A
75A
4
Cies
4000
Coes
2000
TC = 25 C
12
200V
VCC = 100V
9
300V
6
3
Cres
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
0
Figure 11. SOA Characteristics
50
250
Figure 12. Load Current vs. Frequency
500
140
VCC = 400V
10s
load Current : peak of square wave
Load Current [A]
100
Collector Current, Ic [A]
100
150
200
Gate Charge, Qg [nC]
100s
10
1ms
10 ms
1
120
100
80
DC
60
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
FGH75N60UF Rev. A1
10
100
Collector-Emitter Voltage, VCE [V]
o
T = 100 C
C
Powe Dissipation = 181W
0.01
1
Duty cycle : 50%
40
20
1000
1
4
10
100
Frequency [kHz]
1000
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FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
200
10000
Common Emitter
VGE = 15V, RG = 5
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
100
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
td(on)
o
td(off)
TC = 125 C
1000
100
tf
o
TC = 25 C
o
TC = 125 C
10
0
10
20
30
40
Gate Resistance, RG []
10
50
0
10
20
30
40
50
Collector Current, IC [A]
Figure 15. Turn-on Characteristics vs.
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 5
o
TC = 25 C
td(off)
tr
TC = 125 C
100
Switching Time [ns]
Switching Time [ns]
o
td(on)
10
100
tf
10
Common Emitter
VGE = 15V, RG = 5
o
TC = 25 C
o
TC = 125 C
1
1
0
30
60
90
120
Collector Current, IC [A]
0
150
90
120
150
Figure 18. Switching Loss vs. Collector Current
10
100
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 5
IC = 75A
8
o
TC = 25 C
TC = 25 C
Eon
o
TC = 125 C
6
Switching Loss [mJ]
o
Switching Loss [mJ]
60
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
4
Eoff
2
0
30
0
10
20
30
40
FGH75N60UF Rev. A1
Eoff
1
0.1
50
Gate Resistance, RG []
Eon
o
TC = 125 C
10
0
30
60
90
120
150
Collector Current, IC [A]
5
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
FGH75N60UF 600V, 75A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characteristics
Collector Current, IC [A]
500
100
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 20. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.1
0.5
0.2
0.1
0.05
PDM
0.01 0.02
0.01
t1
t2
single pulse
1E-3
1E-5
1E-4
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGH75N60UF Rev. A1
6
www.fairchildsemi.com
FGH75N60UF 600V, 75A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH75N60UF Rev. A1
7
www.fairchildsemi.com
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFIN ITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
8
FGH75N60UF Rev. A1
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FGH75N60UF 600V, 75A Field Stop IGBT
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