SGH40N60UF 600 V PT IGBT General Description Features Fairchild®’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 20 A • High Input Impedance Application • General Inverter, PFC C G G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL E TO-3P TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH40N60UF 600 ± 20 40 20 160 160 64 -55 to +150 -55 to +150 Unit V V A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C0 Typ. --- 1 Max. 0.77 40 Unit °C/W °C/W www.fairchildsemi.com SGH40N60UF 600 V PT IGBT March 2013 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 1430 170 50 ---- pF pF pF ------------------- 15 30 65 50 160 200 360 30 37 110 144 310 430 740 97 20 25 14 --130 150 --600 --200 250 --1200 150 30 40 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Off Characteristics BVCES ΔBVCES/ ΔTJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ©2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C0 VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG 2 www.fairchildsemi.com SGH40N60UF 600 V PT IGBT Electrical Characteristics of the IGBT T 80 Common Emitter TC = 25℃ [A] 70 C 12V 80 Collector Current, I [A] 120 C Collector Current, I Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 15V 20V VGE = 10V 40 60 50 40 30 20 10 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 30 VCC = 300V Load Current : peak of square wave Common Emitter VGE = 15V [V] 25 3 40A 2 Load Current [A] CE 10 Fig 2. Typical Saturation Voltage Characteristics 4 Collector - Emitter Voltage, V 1 Collector - Emitter Voltage, VCE [V] 20A IC = 10A 20 15 10 1 5 Duty cycle : 50% TC = 100℃ Power Dissipation = 32W 0 0 0 30 60 90 120 0.1 150 1 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 [V] Common Emitter TC = 125℃ 16 16 Collector - Emitter Voltage, V CE CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V 1000 Frequency [KHz] Case Temperature, TC [℃] 12 8 40A 4 20A IC = 10A 0 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 20 0 Gate - Emitter Voltage, VGE [V] SGH40N60UF Rev. C0 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2009 Fairchild Semiconductor Corporation 4 Fig 6. Saturation Voltage vs. VGE 3 www.fairchildsemi.com SGH40N60UF 600 V PT IGBT 160 2000 Cies Switching Time [ns] Capacitance [pF] 300 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 1500 1000 Coes Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ 100 Ton Tr 500 Cres 0 1 10 10 1 30 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 2000 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ Toff 1000 Tf Tf 100 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ 200 Eon Eoff Eon Switching Loss [uJ] Switching Time [ns] 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, VCE [V] Eoff 100 20 50 1 10 100 200 1 10 Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time [nS] 100 Switching Time [ns] 200 Fig 10. Switching Loss vs. Gate Resistance 200 Ton Common Emitter VCC = 300V, VGE = ± 15V RG = 10Ω TC = 25℃ TC = 125℃ Tr 100 Gate Resistance, RG [Ω ] Common Emitter VCC = 300V, VGE = ± 15V RG = 10Ω TC = 25℃ TC = 125℃ Toff 100 Tf Toff Tf 20 10 10 15 20 25 30 35 10 40 Fig 11. Turn-On Characteristics vs. Collector Current SGH40N60UF Rev. C0 20 25 30 35 40 Collector Current, IC [A] Collector Current, IC [A] ©2009 Fairchild Semiconductor Corporation 15 Fig 12. Turn-Off Characteristics vs. Collector Current 4 www.fairchildsemi.com SGH40N60UF 600 V PT IGBT 2500 1000 12 Gate - Emitter Voltage, V GE [ V ] Switching Loss [uJ] 15 Eoff Eon 100 Eoff Eon 10 10 Common Emitter VCC = 300V, VGE = ± 15V RG = 10Ω T C = 25℃ T C = 125℃ 15 20 25 30 35 Common Emitter RL = 15 Ω TC = 25℃ 9 300 V 6 VCC = 100 V 200 V 3 0 40 0 30 60 90 120 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 500 500 IC MAX. (Pulsed) 100 100 100us IC MAX. (Continuous) C Collector Current, I Collector Current, I C [A] [A] 50us 1㎳ 10 DC Operation 1 0.1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area o 1 10 100 VGE=20V, TC=100 C 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 Thermal Response, Zthjc [℃/W] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm single pulse t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 -5 10 10 -4 10 -3 -2 10 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C0 5 www.fairchildsemi.com SGH40N60UF 600 V PT IGBT 3000 SGH40N60UF 600 V PT IGBT Mechanical Dimensions TO-3P Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. C0 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation SGH40N60UF Rev. 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