FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.6V @ IC = 50A • High input impedance • Fast switching Applications • PDP System GC E TO-220F Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage Ratings Units 330 V VGES Gate to Emitter Voltage ± 30 V IC Collector Current @ TC = 25oC 50 A ICpulse (1)* Pulsed Collector Current @ TC = 25oC 120 A ICpulse (2)* Pulsed Collector Current @ TC = 25oC 160 A 43 W PD o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 17.2 Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. - 2.9 o C/W 62.5 o C/W - Units Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic_pluse limited by max Tj ©2009 Fairchild Semiconductor Corporation FGPF50N33BT Rev. A 1 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT April 2009 Device Marking Device Package FGPF50N33BT FGPF50N33BTTU TO-220F Eco Status Packaging Type Qty per Tube Tube 50ea RoHS For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA, Tc=25oC VGE = 0V, IC = 250µA, Tc=125oC 330 - - V 340 - - V - 0.2 - V/oC ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V, Tc=25oC - - 20 µA VCE = VCES, VGE = 0V, Tc=125oC - - 200 µA VGE = VGES, VCE = 0V - - ±200 nA IC = 250µA, VCE = VGE 2.3 3.3 4.3 V IC = 20A, VGE = 15V, - 1.2 1.5 V IC = 30A, VGE = 15V, - 1.3 - V IC = 50A, VGE = 15V, TC = 25oC - 1.6 - V IC = 50A, VGE = 15V, TC = 125oC - 1.7 - V - 980 - pF VCE = 30V, VGE = 0V, f = 1MHz - 70 - pF - 40 - pF - 9 - ns IGES G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf td(on) VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC - 33 - ns - 32 - ns Fall Time - 202 - ns Turn-On Delay Time - 9 - ns tr Rise Time td(off) Turn-Off Delay Time tf Qg Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC - 37 - ns - 33 - ns Fall Time - 332 - ns Total Gate Charge - 35 - nC - 6 - nC - 14 - nC FGPF50N33BT Rev. A VCE = 200V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 o TC = 25 C 20V Figure 2. Typical Output Characteristics 160 15V o TC = 125 C 20V 15V 120 Collector Current, IC [A] Collector Current, IC [A] 12V 10V 80 VGE = 8V 40 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 12V 120 10V 80 VGE = 8V 40 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 160 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 120 Collector Current, IC [A] Collector Current, IC [A] 6.0 Figure 4. Transfer Characteristics 160 o TC = 125 C 80 40 TC = 25 C 120 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 80 40 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 6. Saturation Voltage vs. VGE 2.0 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 1.8 1.6 o TC = 125 C 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 50A 1.4 30A 1.2 IC = 20A 1.0 Common Emitter o TC = 25 C 16 12 8 50A 4 30A IC = 20A 0.8 25 FGPF50N33BT Rev. A 50 75 100 o Case Temperature, TC [ C] 0 125 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 1500 Common Emitter Common Emitter VGE = 0V, f = 1MHz Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 o TC = 25 C 1000 Coes 500 30A 4 IC = 20A 50A Cres 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 500 Common Emitter 10µs 100 12 VCC = 100V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 200V 9 6 3 10 20 30 Gate Charge, Qg [nC] 10 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 0 0 100µs 40 Figure 11. Turn-on Characteristics vs. Gate Resistance 400 Figure 12. Turn-off Characteristics vs. Gate Resistance 4000 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A 1000 tr Switching Time [ns] Switching Time [ns] 1 10 100 Collector-Emitter Voltage, VCE [V] 10 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C tf o TC = 125 C 100 td(off) o TC = 25 C o TC = 125 C 10 1 0 FGPF50N33BT Rev. A 10 20 30 40 Gate Resistance, RG [Ω ] 0 50 10 20 30 40 50 Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 5000 200 Common Emitter VGE = 15V, RG = 5Ω Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C tr o Switching Time [ns] TC = 125 C 1000 Switching Time [ns] 100 td(on) TC = 25 C o TC = 125 C tf 100 td(off) 10 5 10 20 30 40 10 10 50 20 Figure 15. Switching Loss vs. Gate Resistance 20000 10000 Common Emitter VCC = 200V, VGE = 15V TC = 25 C o TC = 125 C Switching Loss [mJ] Switching Loss [mJ] Common Emitter VGE = 15V, RG = 5Ω TC = 25 C o Eoff 100 Eon 0 50 o IC = 20A 10 40 Figure 16. Switching Loss vs. Collector Current 5000 1000 30 Collector Current, IC [A] Collector Current, IC [A] 10 20 30 40 Gate Resistance, RG [Ω] 1000 Eoff 100 Eon 10 1 10 50 o TC = 125 C 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 200 Collector Current, IC [A] 100 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 500 Collector-Emitter Voltage, VCE [V] FGPF50N33BT Rev. A 5 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT Typical Performance Characteristics FGPF50N33BT 330V, 50A PDP Trench IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.5 1 0.3 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 single pulse 1E-3 1E-5 1E-4 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF50N33BT Rev. A 6 www.fairchildsemi.com FGPF50N33BT 330V, 50A PDP Trench IGBT Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 9.75 ±0.30 MAX1.47 0.80 ±0.10 ) 0° (3 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FGPF50N33BT Rev. 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