FAIRCHILD FDMS8680

FDMS8680
N-Channel PowerTrench® MOSFET
30V, 35A, 7.0mΩ
Features
General Description
„ Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
„ Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11.5A
„ Advanced Package and Silicon combination for
low rDS(on) and high efficiency
Applications
„ MSL1 robust package design
„ High Side for Synchronous Buck to Power Core Processor
„ RoHS Compliant
„ Secondary Side Synchronous Rectifier
„ High Side Switch in POL DC/DC Converter
„ Oring FET/ Load Switch
Pin 1
S
D
D
D
S
S
G
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
35
63
(Note 1a)
14
(Note 3)
216
-Pulsed
A
100
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
50
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2.5
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8680
Device
FDMS8680
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
Package
Power 56
1
Reel Size
13"
Tape Width
12mm
Quantity
3000units
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
July 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3.0
V
24
mV/°C
µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-5.7
VGS = 10V, ID = 14A
5.5
7.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 11.5A
8.5
11.0
VGS = 10V, ID = 14A, TJ = 125°C
8.2
10.5
VDD = 10V, ID = 14A
72
gFS
Forward Transconductance
1.0
1.8
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1195
1590
pF
555
740
pF
95
145
pF
0.8
4.0
Ω
9
18
ns
3
10
ns
21
34
ns
2
10
ns
18
26
nC
10
14
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 14A,
VGS = 10V, RGEN = 6Ω
VDD = 15V,
ID = 14A
3.2
nC
2.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 14A
(Note 2)
IF = 14A, di/dt = 100A/µs
0.8
1.2
V
27
44
ns
15
27
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
2
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
VGS = 4V
80
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
VGS = 10V
VGS = 4.5V
60
VGS = 3.5V
40
VGS = 3V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
3.0
VGS = 3.5V
2.5
VGS = 4V
2.0
VGS = 4.5V
1.5
1.0
VGS = 10V
0.5
4
0
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID = 14A
1.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
12
TJ = 125oC
8
TJ = 25oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
80
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
100
20
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
VDD = 5V
60
40
TJ = 150oC
20
TJ = 25oC
0
80
24
ID = 14A
VGS = 10V
-50
60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0.6
-75
40
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
3.5
1
2
TJ =
3
-55oC
4
VGS = 0V
10
TJ = 25oC
1
TJ = 150oC
0.1
0.01
TJ = -55oC
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
3
1.2
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2000
Ciss
ID = 14A
1000
8
VDD = 10V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
6
VDD = 20V
4
Coss
2
100
50
0.1
0
0
4
8
12
16
20
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs Drain
to Source Voltage
70
20
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
10
TJ = 25oC
TJ = 125oC
50
40
VGS = 10V
30
20
Limited by Package
10
VGS = 4.5V
o
RθJC = 2.5 C/W
1
0.01
0.1
1
10
0
25
100 300
50
tAV, TIME IN AVALANCHE(ms)
P(PK), PEAK TRANSIENT POWER (W)
10
1ms
0.1
10ms
100ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
RθJA = 125oC/W
DC
TA = 25oC
0.01
0.01
0.1
1
10
100
150
2000
1000
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
0
10
1
2
10
10
3
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100us
THIS AREA IS
LIMITED BY rDS(on)
100
o
200
100
1
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.001
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 125 C/W
0.0001
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
5
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
®
PDP-SPM™
Power220®
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
www.fairchildsemi.com
FDMS8680 N-Channel PowerTrench® MOSFET
TRADEMARKS