ONSEMI MJF6388

MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
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COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
Features
• Isolated Overmold Package, TO−220 Type
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and
•
•
•
•
•
•
•
•
TIP107
100 VCEO(sus)
10 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc
High Isolation Voltage (up to 4500 VRMS)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
Pb−Free Packages are Available*
NPN
PNP
COLLECTOR 2
COLLECTOR 2
BASE
1
BASE
1
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EMITTER 3
MJF6388
EMITTER 3
MJF6668
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C)
Per Figure 14
Collector Current
− Continuous
− Peak (Note 2)
Symbol
Value
Unit
VCEO
100
Vdc
VCB
100
Vdc
VEB
5.0
Vdc
VISOL
4500
10
15
Adc
Base Current − Continuous
IB
1.0
Adc
Total Power Dissipation (Note 3) @ TC = 25_C
Derate above 25_C
PD
40
0.31
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
TJ, Tstg
–65 to +150
_C
1
2
3
MJF6xy8
G
A
Y
WW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case (Note 3)
RqJC
4.0
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 10
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
V
IC
Operating and Storage Temperature Range
MARKING
DIAGRAM
1
MJF6xy8G
AYWW
= Specific Device Code
x = 3 or 6
y = 6 or 8
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF6388
TO−220 FULLPACK
50 Units/Rail
MJF6388G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
MJF6668
TO−220 FULLPACK
50 Units/Rail
MJF6668G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF6388/D
MJF6388 (NPN), MJF6668 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(VCE = 80 Vdc, IB = 0)
ICEO
−
10
mAdc
Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
ICEX
−
−
10
3.0
mAdc
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
2.0
mAdc
hFE
3000
1000
200
100
15000
−
−
−
−
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)
Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
−
−
−
−
2.0
2.0
2.5
3.0
Vdc
Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
−
−
2.8
4.5
Vdc
Base−Emitter On Voltage
(IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
2.5
Vdc
|hfe|
20
−
−
Cob
−
200
300
pF
Cc−hs
−
3.0 Typ
pF
hfe
1000
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS (Note 4)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MJF6388
MJF6668
Insulation Capacitance
(Collector−to−External Heatsink)
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
NPN
MJF6388
PNP
MJF6668
COLLECTOR
COLLECTOR
BASE
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 1. Darlington Schematic
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2
MJF6388 (NPN), MJF6668 (PNP)
VCC
+ 30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.,
MUR110 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
SCOPE
TUT
V1
APPROX.
+12 V
RB
V2
APPROX.
-8 V
≈120
-4 V
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
≈8 k
D1
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 2. Switching Times Test Circuit
NPN
MJF6388
PNP
MJF6668
10
7
5
7
5
ts
t, TIME (s)
μ
tf
1
0.7
0.3
0.2
0.1
0.07
0.1
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
tr
3
td
2
ts
1
0.7
0.5
0.3
0.2
1
0.5
2
IC, COLLECTOR CURRENT (AMPS)
5
0.1
0.1
10
td
tf
3
0.5 0.7 1
2
0.3
IC, COLLECTOR CURRENT (AMPS)
0.2
Figure 3. Typical Switching Times
20
IC, COLLECTOR CURRENT (AMPS)
t, TIME (s)
μ
3
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
100 ms
10
5
3
2
dc
TJ = 150°C
1
5 ms
0.5
0.3
0.2
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
0.1
0.05
0.03
0.02
1ms
1
5
20 30
2
3
10
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Forward Bias
Safe Operating Area
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3
100
5
7
10
MJF6388 (NPN), MJF6668 (PNP)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.03
P(pk)
RqJC(t) = r(t) RqJC
RqJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.1
0.05
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01 0.02
0.05
0.1
0.2 0.3 0.5
1
2 3
5
10
20 30 50
t, TIME (ms)
100 200 300 500
1K
2K 3K 5K
10K 20K 30K 50K 100K
Figure 5. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = l50_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
140
120
160
TC, CASE TEMPERATURE (°C)
Figure 6. Maximum Power Derating
NPN
MJF6388
PNP
MJF6668
5000
3000
2000
5000
hFE , SMALL-SIGNAL CURRENT GAIN
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
100
50
30
20
10
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
2000
1000
500
100
50
20
10
500 1000
TC = 25°C
VCE = 4 VOLTS
IC = 3 AMPS
200
1
2 3
5 7 10
20 30 50 70 100
f, FREQUENCY (kHz)
Figure 7. Typical Small−Signal Current Gain
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4
200 300 500 1000
MJF6388 (NPN), MJF6668 (PNP)
NPN
MJF6388
PNP
MJF6668
300
300
TJ = 25°C
TJ = 25°C
200
100
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
200
Cob
70
Cib
50
30
0.1
Cib
100
Cob
70
50
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
30
0.1
100
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 8. Typical Capacitance
20,000
20,000
VCE = 4 V
VCE = 4 V
10,000
5000
TJ = 150°C
3000
2000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
25°C
1000
-55°C
500
300
200
0.1
0.2
0.3
0.5 0.7
1
3
2
5
7
7000
5000
2000
25°C
1000
700
500
300
200
0.1
10
TJ = 150°C
3000
-55°C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Typical DC Current Gain
3
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
3
TJ = 25°C
2.6
IC = 2 A
6A
2.2
1.8
1.4
1
0.3
30
4A
IB, BASE CURRENT (mA)
0.5 0.7
1
2
3
5
IB, BASE CURRENT (mA)
Figure 10. Typical Collector Saturation Region
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5
7
10
20
30
MJF6388 (NPN), MJF6668 (PNP)
NPN
MJF6388
PNP
MJF6668
3
3
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4 V
1
2
1.5
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
1
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.5
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical “On” Voltages
+4
+5
θV, TEMPERATURE COEFFICIENT (mV/ °C)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
+5
*IC/IB ≤ hFE/3
+3
25°C to 150°C
+2
+1
-55°C to 25°C
0
-1
-2
-3
-4
-5
0.1
*qVC for VCE(sat)
qVB for VBE
25°C to 150°C
-55°C to 25°C
0.2 0.3
0.5 0.7
1
2
3
5
7
+4
25°C to 150°C
+2
+1
-55°C to 25°C
0
-1
-2
-3
*qVC for VCE(sat)
qVB for VBE
25°C to 150°C
-55°C to 25°C
-4
-5
0.1
10
*IC/IB ≤ hFE/3
+3
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1
2 3
IC, COLLECTOR CURRENT (AMP)
5
Figure 12. Typical Temperature Coefficients
105
104
REVERSE
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
103
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 - 0.4 -0.2
0
+0.2 +0.4 +0.6 +0.8
+1
VCE = 30 V
103
102
101
TJ = 150°C
100°C
100
25°C
10-1
+0.6 +0.4 +0.2
+1.2 +1.4
FORWARD
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
-0.2 -0.4 -0.6 -0.8
-1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Typical Collector Cut−Off Region
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6
-1.2 -1.4
MJF6388 (NPN), MJF6668 (PNP)
TEST CONDITION FOR ISOLATION TEST*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 14. Mounting Position
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 15. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend
exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
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7
MJF6388 (NPN), MJF6668 (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Y
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