MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. http://onsemi.com COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS Features • Isolated Overmold Package, TO−220 Type • Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and • • • • • • • • TIP107 100 VCEO(sus) 10 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc High Isolation Voltage (up to 4500 VRMS) Case 221D is UL Recognized at 3500 VRMS: File #E69369 Pb−Free Packages are Available* NPN PNP COLLECTOR 2 COLLECTOR 2 BASE 1 BASE 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EMITTER 3 MJF6388 EMITTER 3 MJF6668 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage RMS Isolation Voltage (Note 1) (t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) Per Figure 14 Collector Current − Continuous − Peak (Note 2) Symbol Value Unit VCEO 100 Vdc VCB 100 Vdc VEB 5.0 Vdc VISOL 4500 10 15 Adc Base Current − Continuous IB 1.0 Adc Total Power Dissipation (Note 3) @ TC = 25_C Derate above 25_C PD 40 0.31 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg –65 to +150 _C 1 2 3 MJF6xy8 G A Y WW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case (Note 3) RqJC 4.0 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. 3. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 10 TO−220 FULLPACK CASE 221D STYLE 2 UL RECOGNIZED V IC Operating and Storage Temperature Range MARKING DIAGRAM 1 MJF6xy8G AYWW = Specific Device Code x = 3 or 6 y = 6 or 8 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping MJF6388 TO−220 FULLPACK 50 Units/Rail MJF6388G TO−220 FULLPACK (Pb−Free) 50 Units/Rail MJF6668 TO−220 FULLPACK 50 Units/Rail MJF6668G TO−220 FULLPACK (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJF6388/D MJF6388 (NPN), MJF6668 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO − 10 mAdc Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) ICEX − − 10 3.0 mAdc mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc hFE 3000 1000 200 100 15000 − − − − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) − − − − 2.0 2.0 2.5 3.0 Vdc Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) − − 2.8 4.5 Vdc Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.5 Vdc |hfe| 20 − − Cob − 200 300 pF Cc−hs − 3.0 Typ pF hfe 1000 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 4) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MJF6388 MJF6668 Insulation Capacitance (Collector−to−External Heatsink) Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. NPN MJF6388 PNP MJF6668 COLLECTOR COLLECTOR BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 1. Darlington Schematic http://onsemi.com 2 MJF6388 (NPN), MJF6668 (PNP) VCC + 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., MUR110 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE TUT V1 APPROX. +12 V RB V2 APPROX. -8 V ≈120 -4 V 25 ms tr, tf ≤ 10 ns DUTY CYCLE = 1% ≈8 k D1 51 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure 2. Switching Times Test Circuit NPN MJF6388 PNP MJF6668 10 7 5 7 5 ts t, TIME (s) μ tf 1 0.7 0.3 0.2 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 tr 3 td 2 ts 1 0.7 0.5 0.3 0.2 1 0.5 2 IC, COLLECTOR CURRENT (AMPS) 5 0.1 0.1 10 td tf 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMPS) 0.2 Figure 3. Typical Switching Times 20 IC, COLLECTOR CURRENT (AMPS) t, TIME (s) μ 3 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 100 ms 10 5 3 2 dc TJ = 150°C 1 5 ms 0.5 0.3 0.2 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 0.1 0.05 0.03 0.02 1ms 1 5 20 30 2 3 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Forward Bias Safe Operating Area http://onsemi.com 3 100 5 7 10 MJF6388 (NPN), MJF6668 (PNP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.05 0.03 P(pk) RqJC(t) = r(t) RqJC RqJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.1 0.05 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K Figure 5. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TJ(pk) = l50_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 140 120 160 TC, CASE TEMPERATURE (°C) Figure 6. Maximum Power Derating NPN MJF6388 PNP MJF6668 5000 3000 2000 5000 hFE , SMALL-SIGNAL CURRENT GAIN 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 2000 1000 500 100 50 20 10 500 1000 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 200 1 2 3 5 7 10 20 30 50 70 100 f, FREQUENCY (kHz) Figure 7. Typical Small−Signal Current Gain http://onsemi.com 4 200 300 500 1000 MJF6388 (NPN), MJF6668 (PNP) NPN MJF6388 PNP MJF6668 300 300 TJ = 25°C TJ = 25°C 200 100 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 200 Cob 70 Cib 50 30 0.1 Cib 100 Cob 70 50 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 30 0.1 100 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 8. Typical Capacitance 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 5000 TJ = 150°C 3000 2000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 25°C 1000 -55°C 500 300 200 0.1 0.2 0.3 0.5 0.7 1 3 2 5 7 7000 5000 2000 25°C 1000 700 500 300 200 0.1 10 TJ = 150°C 3000 -55°C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Typical DC Current Gain 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 3 TJ = 25°C 2.6 IC = 2 A 6A 2.2 1.8 1.4 1 0.3 30 4A IB, BASE CURRENT (mA) 0.5 0.7 1 2 3 5 IB, BASE CURRENT (mA) Figure 10. Typical Collector Saturation Region http://onsemi.com 5 7 10 20 30 MJF6388 (NPN), MJF6668 (PNP) NPN MJF6388 PNP MJF6668 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4 V 1 2 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.5 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages +4 +5 θV, TEMPERATURE COEFFICIENT (mV/ °C) θV, TEMPERATURE COEFFICIENT (mV/ °C) +5 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 +1 -55°C to 25°C 0 -1 -2 -3 -4 -5 0.1 *qVC for VCE(sat) qVB for VBE 25°C to 150°C -55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 5 7 +4 25°C to 150°C +2 +1 -55°C to 25°C 0 -1 -2 -3 *qVC for VCE(sat) qVB for VBE 25°C to 150°C -55°C to 25°C -4 -5 0.1 10 *IC/IB ≤ hFE/3 +3 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 Figure 12. Typical Temperature Coefficients 105 104 REVERSE REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 - 0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VCE = 30 V 103 102 101 TJ = 150°C 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 +1.2 +1.4 FORWARD 104 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut−Off Region http://onsemi.com 6 -1.2 -1.4 MJF6388 (NPN), MJF6668 (PNP) TEST CONDITION FOR ISOLATION TEST* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 14. Mounting Position *Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 15. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 7 MJF6388 (NPN), MJF6668 (PNP) PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER Y ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJF6388/D